silicon-nitride pdf Datasheet P1 Description --- IC-ON-LINE


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silicon-nitride Datasheet PDF File

For silicon-nitride Found Datasheets File :: 150+ Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				CREE POWER
Part No.	W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description	Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
File Size	273.34K / 17 Page	View it Online	Download Datasheet

				M/A-COM Technology Solu...
Part No.	9110R-9129R 91100-91199 9130R-9149R
Description	The 91 Series of chip capacitors features silicon nitride/silicon dioxide dielectric layers for high reliability and stable capacitance over time.
File Size	492.33K / 3 Page	View it Online	Download Datasheet

				AVX, Corp. AVX Corporation
Part No.	04023J0R1PBWTR 06035J1R8BBTTR 02011J4R7CASTR 06033K680AATTR 06033K680AAWTR 06033K680ABWTR 06033K680BATTR 06033K680BAWTR 06033K680BBWTR 06033K680CATTR 06033K680CAWTR 06033K680CBWTR 06033K680DATTR 06033K680DAWTR 06033K680FATTR 06033K680FAWTR 06033K680FBWTR 06033K680GAWTR 06033K680GBWTR 06033K680JATTR 06033K680JBWTR 06033K680PAWTR 06033K680PBTTR 06033K680PBWTR 06033K680QATTR 06033K680QAWTR 06033K680QBWTR 06033K680PATTR 04021J4R7CAWTR 04021J4R7CBSTR 04021J4R7CATTR 04021J4R7CBTTR 04021J4R7CBWTR 06033K680DBWTR 06033K680GATTR 06033K680JAWTR 04021J4R7CASTR 06033K4R7FATTR 06033K4R7FBWTR 06033K4R7CBWTR 06033K4R7CATTR 06033K4R7DATTR 06033K4R7DAWTR 06033K4R7FAWTR 06033K4R7GATTR 06033K4R7GBWTR 06033K4R7CAWTR 06033K4R7DBWTR 06033K4R7GAWTR 0603YJ4R7CAWTR 0603YJ4R7CBWTR 0603YJ4R7DATTR 0603YJ4R7DAWTR 0603YJ4R7DBWTR 0603YJ4R7CATTR 0201YJ4R7FASTR 02011K4R7FASTR 02015K8R2FASTR 0201ZK4R7FASTR 02011K680FASTR 02015J8R2FASTR 0201ZJ4R7FASTR 0201YK8R2FASTR 02013K4R7FASTR 02013J680FASTR 0201ZJ8R2FASTR 02015J4R7FASTR 0201YK4R7FASTR 02011J680FASTR 0201ZJ680FASTR 02015K680FASTR 0201YK680FASTR 0201YJ8R2FASTR 02013J4R7FASTR 0201YJ680FASTR 0201ZK680FASTR 02013J8R2FASTR 02011K8R2FASTR 02013K8R2FASTR 02015K4R7FASTR
Description	CAP CERAMIC .1PF 25V 0402 RF SMD CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 25 V, 0.0000001 uF, SURFACE MOUNT, 0402 CAP CERAMIC 1.8PF 50V 0603 RFSMD CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 50 V, 0.0000018 uF, SURFACE MOUNT, 0603 Thin-Film Technology Thin-Film RF/Microwave Capacitors
File Size	463.00K / 20 Page	View it Online	Download Datasheet

				Digitron Semiconductors
Part No.	MFE211 MFE212
Description	N-CHANNEL DUAL GATE SILICON NITRIDE PASSIVATED MOS FIELD EFFECT TRANSISTORS
File Size	1,131.56K / 5 Page	View it Online	Download Datasheet

				New Jersey Semi-Conductor Products, Inc.
Part No.	MFE211 MFE212
Description	N-. HANNEL DUAL-GATE silicon-nitride PASSIVATED MOS FIELD-EFFECT TRANSISTORS
File Size	94.15K / 2 Page	View it Online	Download Datasheet

				Motorola, Inc
Part No.	MFE201 MFE202 MFE203
Description	N-CHANNEL DUAL-GAE silicon-nitride PASSIVATED MOS FIELD-EFFECT TRANSISTORS
File Size	536.84K / 5 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. Motorola, Inc.
Part No.	MFE211 MFE212
Description	N-CHANNEL DUAL-GATE silicon-nitride PASSIVATED MOS FIELD-EFFECT TRANSISTORS N沟道双栅氮化硅钝化马鞍山场效应晶体管 From old datasheet system
File Size	423.78K / 5 Page	View it Online	Download Datasheet

				Microsemi
Part No.	AML59P4512
Description	Gallium Nitride (GaN)
File Size	540.93K / 1 Page	View it Online	Download Datasheet

				Anaren Microwave
Part No.	RFP-10N50TV
Description	Aluminum Nitride Terminations
File Size	490.40K / 2 Page	View it Online	Download Datasheet

				Anaren Microwave
Part No.	RFP-375375N6Z50-2
Description	Aluminum Nitride Terminations
File Size	506.37K / 2 Page	View it Online	Download Datasheet

For silicon-nitride Found Datasheets File :: 150+ Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

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