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    ACE1632B

ACE Technology Co., LTD.
Part No. ACE1632B
OCR Text ... enhancement mode f i e ld e ffect t ransis tor ver 1.2 1 description ace1613b uses advanced trench technology to provide excellent r ds(on) . this device particularly suits for low voltage application such as power mana...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 415.09K  /  6 Page

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    ACE2303B

ACE Technology Co., LTD.
Part No. ACE2303B
OCR Text ...l enhancement mode f i el d e ffect transistor ver 1. 2 1 d escription this p - channel enhancement mode power fets are produced with high cell density, dmos trench technology, which is especially used to min...
Description P-Channel Enhancement Mode Field Effect Transistor

File Size 331.41K  /  5 Page

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    Astrodyne, Inc.
Part No. IOP480
OCR Text ... ned as b ehav iors in th e a ffect e d silicon t hat do not match beh av i o r s detai l ed i n t h i s doc um ent ati o n . document re v i s i on de s c r i ption p ublic a t ion d a te io p 48 0 da ta book 2.0 rel...
Description I/O Processor|IOP 480 Design Notes I / O处理器|眼压480设计说明

File Size 115.55K  /  11 Page

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    SDM9926A

SamHop Microelectronics Corp.
N.A.
ETC
Part No. SDM9926A
OCR Text ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) TYP ID 6A R DS (ON) S uper high dense cell design for low R DS (ON). 26 @ V G S = 4.0V 35 @ V G S = 2.5V R ugged and reliable. S urface Mount P ac...
Description Dual N-Channel E nhancement Mode F ield E ffect Transistor

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    SDD9916 SDU9916

SAMHOP[SamHop Microelectronics Corp.]
Part No. SDD9916 SDU9916
OCR Text ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) TYP ID 20A R DS (ON) S uper high dense cell design for low R DS (ON). 25 @ V G S = 4.5V 35 @ V G S = 2.7V R ugged and reliable. TO-252 and TO-251 ...
Description N-Channel E nhancement Mode F ield E ffect Transistor

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    STD1224N

SamHop Microelectronics Corp.
Part No. STD1224N
OCR Text ffect Trans is tor P R ODUC T S UMMAR Y V DS S 24V F E AT UR E S ( m [ ) Max ID 12A R DS (ON) S uper high dense cell design for low R DS (ON). 80 @ V G S = 4.5V 130 @ V G S = 2.5V R ugged and reliable. TO-252 and TO-2...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 680.17K  /  8 Page

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    STD20N03L

SamHop Microelectronics Corp.
Part No. STD20N03L
OCR Text ffect Transistor P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S ( mW) ID 28A R DS (ON) Max S uper high dense cell design for low R DS (ON). 23 @ V G S = 10V 39 @ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 ...
Description N-Channel Logic Level E nhancement Mode F ield E ffect Transistor

File Size 692.21K  /  8 Page

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    SDU9435 SDU9435A

SamHop Microelectronics Corp.
Part No. SDU9435 SDU9435A
OCR Text ffect Transistor P R ODUC T S UMMAR Y V DS S -30V F E AT UR E S TYP ID -10A R DS (ON) ( m W ) S uper high dense cell design for low R DS (ON). 40 @ V G S = -10V 67 @ V G S = -4.5V R ugged and reliable. TO-252 P ackage...
Description P - Channel E nhancement Mode F ield E ffect Transistor

File Size 324.30K  /  6 Page

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Price & Availability of ffect
DigiKey

Part # Manufacturer Description Price BuyNow  Qty.
MINI KIT LIGHTING EFFECTS
4166-MINIKITLIGHTINGEFFECTS-ND
Gearbox Labs MINI KIT LIGHTING EFFECTS 1: USD30
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GRILLE EFFECT 80
2056-GRILLEEFFECT80-ND
VISATON GmbH & Co KG GRILLE 1: USD14.02
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Mouser Electronics

Part # Manufacturer Description Price BuyNow  Qty.
8210
243-GRILLEEFFECT80
VISATON GmbH & Co KG Speakers & Transducers Protective grille, punched steel sheet, black, material thickness: 0.5m 1: USD14.75
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25: USD12.15
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100: USD11.28
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1

TTI

Part # Manufacturer Description Price BuyNow  Qty.
55505-00-02-A
55505-00-02-A
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SS41
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Honeywell Sensing and Control Board Mount Hall Effect / Magnetic Sensors 20mA Bipolar 5V/9V/ 12V/15V/18V 3-Pin 1000: USD1.84
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55100-3H-02-A
55100-3H-02-A
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5: USD8.22
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100: USD5.52
500: USD5.18
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2SS52M
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Honeywell Sensing and Control Board Mount Hall Effect / Magnetic Sensors 20mA Omnipolar radial lead IC pkg 1: USD5.77
10: USD4.46
50: USD4.28
100: USD4.2
250: USD4.12
500: USD4.04
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