| Description |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的sodimm基于512Mb乙芯4位非ECC
200pin Unbuffered sodimm based on 512Mb B-die 64bit Non-ECC 200pin缓冲的sodimm基于512Mb乙芯64位非ECC
64M X 64 ddr DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, sodimm-200
32M X 64 ddr DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, sodimm-200
200pin Unbuffered sodimm based on 512Mb B-die 64bit Non-ECC 200pin缓冲的sodimm基于512Mb乙芯4位非ECC
128M X 64 ddr DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, sodimm-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
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