|
|
|
ST Microelectronics
|
Part No. |
STW8NB100
|
OCR Text |
...Off-voltage Rise Time Fall Time cross-over Time Test Conditions VDD = 800V, ID = 7 A, RG = 4.7, VGS = 10V (see test circuit, Figure 5) Min. Typ. 32 32 40 Max. Unit ns ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Par... |
Description |
N-CHANNEL 1000V - 1.3 OHM - 7.3A - TO-247 POWERMESH MOSFET
|
File Size |
253.36K /
9 Page |
View
it Online |
Download Datasheet |
|
|
|
SGS Thomson Microelectronics
|
Part No. |
STW8NB100
|
OCR Text |
...Off-voltage Rise Time Fall Time cross-over Time Test Conditions V DD = 800 V R G = 4.7 ID = 7 A V GS = 10 V Min. Typ. 32 32 40 Max. Unit ns ns ns
SOURCE DRAIN DIODE
Symbol ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Cu... |
Description |
N - CHANNEL 1000V - 1.2W - 8A - TO-247, PowerMESH MOSFET
|
File Size |
55.84K /
6 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|