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For bvdss Found Datasheets File :: 131+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 |   

    International Rectifier, Corp.
IRF[International Rectifier]
Part No. JANTXV2N6851 JANTX2N6851
Description POWER MOSFET P-CHANNEL(bvdss=-200V, Rds(on)=0.80ohm, Id=-4.0A) 功率MOSFET P沟道(bvdss \u003d-00V,的Rds(on)\u003d 0.80ohm,身份证\u003d- 4.0a上)

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    MIL-PRF-19500/564

International Rectifier, Corp.
Part No. MIL-PRF-19500/564
Description POWER MOSFET P-CHANNEL(bvdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) 功率MOSFET P沟道(bvdss \u003d- 100V的,的Rds(on)\u003d 0.30ohm,身份证\u003d- 6.5A

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    International Rectifier, Corp.
Part No. IRFY130CM
Description POWER MOSFET N-CHANNEL(bvdss=100V, Rds(on)=0.18ohm, Id=14.4A) 功率MOSFET N沟道(bvdss \u003d 100V的,的Rds(on)\u003d 0.18ohm,身份证\u003d 14.4A

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    International Rectifier, Corp.
Part No. IRFY440CM
Description POWER MOSFET N-CHANNEL(bvdss=500V, Rds(on)=0.85ohm, Id=7.0A) 功率MOSFET N沟道(bvdss \u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 7.0A

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    International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRHN8230 IRHN7230
Description TRANSISTOR N-CHANNEL(bvdss=200V, Rds(on)=0.40ohm, Id=9.0A) 晶体管N沟道(bvdss \u003d 200V的电压,的Rds(on)\u003d 0.40ohm,身份证\u003d 9.0,9.0

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    International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFY9240CM IRFY9240
Description POWER MOSFET P-CHANNEL(bvdss=-200V, Rds(on)=0.51ohm, Id=-9.4A) 功率MOSFET P沟道(bvdss \u003d-00V,的Rds(on)\u003d 0.51ohm,身份证\u003d-输出高达9.4A
POWER MOSFET P-CHANNEL(bvdss=-200V Rds(on)=0.51ohm Id=-9.4A)

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    SemeLAB
SEME-LAB[Seme LAB]
Part No. IRFN340SMD
Description N-Channel Power MOSFET(bvdss:400V,Id(cont):10A,Rds(on):0.55Ω)(N沟道功率MOS场效应管(bvdss:400V,Id(cont):10A,Rds(on):0.55Ω))

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    Microsemi, Corp.
Part No. MSAFZ15N40A MSAFX14N100A FSE1850 FSE1350 FSE1540 FSE2040 FSN0540 MICROSEMICORP-SCOTTSDALE-MSAFX11N80A
Description N Channel MOSFET; Package: CoolPack1; trr (nsec): 120; t(on) (nsec): 180; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 300; bvdss (V): 400; Rq: 0.4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: CoolPack1; trr (nsec): 850; t(on) (nsec): 60; ID (A): 14; RDS(on) (Ohms): 0.82; PD (W): 310; bvdss (V): 1000; Rq: 0.25; VGS(th) (V): 4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 35; ID (A): 18; RDS(on) (Ohms): 0.28; PD (W): 150; bvdss (V): 500; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 27; ID (A): 13; RDS(on) (Ohms): 0.4; PD (W): 125; bvdss (V): 500; Rq: 1; VSD (V): 1.4 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 35; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 125; bvdss (V): 400; Rq: 1; VSD (V): 1.6 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 33; ID (A): 20; RDS(on) (Ohms): 0.21; PD (W): 150; bvdss (V): 400; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-257; trr (nsec): 660; t(on) (nsec): 17; ID (A): 5; RDS(on) (Ohms): 1; PD (W): 50; bvdss (V): 400; Rq: 2; VSD (V): 1.6 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET

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    International Rectifier, Corp.
IRF[International Rectifier]
Part No. JANTXV2N6845 2N6845 JANTX2N6845
Description POWER MOSFET P-CHANNEL(bvdss=-100V, Rds(on)=0.60ohm, Id=-4.0A) 功率MOSFET P沟道bvdss \u003d- 100V的,的Rds(on)\u003d 0.60ohm,身份证\u003d- 4.0a上)
POWER MOSFET P-CHANNEL(bvdss=-100V/ Rds(on)=0.60ohm/ Id=-4.0A)
Dual Wide-Bandwidth High-Output-Drive Op Amp w/Shutdown 14-PDIP -40 to 125

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    Microsemi, Corp.
STMicroelectronics N.V.
MICROSEMI CORP
Part No. FSF2510 FSF2210 FSN1410 FSN1606 IRF540
Description N Channel MOSFET; Package: TO-254; trr (nsec): 600; t(on) (nsec): 100; ID (A): 25; RDS(on) (Ohms): 0.07; PD (W): 125; bvdss (V): 100; Rq: 1; VSD (V): 2.3 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-254; trr (nsec): 300; t(on) (nsec): 23; ID (A): 22; RDS(on) (Ohms): 0.1; PD (W): 100; bvdss (V): 100; Rq: 1.3; VSD (V): 2.5 22 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 250; t(on) (nsec): 14; ID (A): 14; RDS(on) (Ohms): 0.18; PD (W): 50; bvdss (V): 100; Rq: 2; VSD (V): 2.5 14 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 220; t(on) (nsec): 21; ID (A): 16; RDS(on) (Ohms): 0.07; PD (W): 50; bvdss (V): 60; Rq: 2; VSD (V): 1.8 16 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET

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