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  54fbga Datasheet PDF File

For 54fbga Found Datasheets File :: 30    Search Time::1.562ms    
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    K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163PF-RG K4S56163PF-RG_F90 K4S56163PF-RG_F1L K4S56163PF-RG_F75 K4S56163PF-

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163PF-RG K4S56163PF-RG_F90 K4S56163PF-RG_F1L K4S56163PF-RG_F75 K4S56163PF-RG/F90 K4S56163PF-RG/F1L K4S56163PF-RG/F75 K4S56163PF-RF750 K4S56163PF-BF900 K4S56163PF-RG750 K4S56163PF-BG750 K4S56163PF-RF900
OCR Text 54fbga FEATURES * 1.8V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequentia...
Description 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54
4M x 16Bit x 4 Banks Mobile SDRAM in 54fbga 4米16 × 4银行4FBGA移动SDRAM
CAP 47UF 350V ELECT EB SMD

File Size 111.59K  /  12 Page

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    K4M281633F K4M281633F-C K4M281633F-F1L K4M281633F-G K4M281633F-L K4M281633F-N K4M281633F-RE

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4M281633F K4M281633F-C K4M281633F-F1L K4M281633F-G K4M281633F-L K4M281633F-N K4M281633F-RE
OCR Text 54fbga FEATURES * 3.0V & 3.3V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Se...
Description 2M x 16Bit x 4 Banks Mobile SDRAM in 54fbga 200万16 × 4银行54fbga移动SDRAM

File Size 111.99K  /  12 Page

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    K4M28163LF K4M28163LF-C K4M28163LF-L K4M28163LF-N K4M28163LF-R1L K4M28163LF-R75 K4M28163LF-RE K4M28163LF-S K4M28163LF-BR

SAMSUNG[Samsung semiconductor]
Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4M28163LF K4M28163LF-C K4M28163LF-L K4M28163LF-N K4M28163LF-R1L K4M28163LF-R75 K4M28163LF-RE K4M28163LF-S K4M28163LF-BR750
OCR Text 54fbga FEATURES * 2.5V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequentia...
Description 2M x 16Bit x 4 Banks Mobile SDRAM in 54fbga 200万16 × 4银行4FBGA移动SDRAM
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54

File Size 112.71K  /  12 Page

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    K4M28163PF K4M28163PF-F75 K4M28163PF-R K4M28163PF-RBGF75 K4M28163PF-RG K4M28163PF-RF750 K4M28163PF-BF900 K4M28163PF-BF75

Samsung Electronic
Samsung Semiconductor Co., Ltd.
Data Device, Corp.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. K4M28163PF K4M28163PF-F75 K4M28163PF-R K4M28163PF-RBGF75 K4M28163PF-RG K4M28163PF-RF750 K4M28163PF-BF900 K4M28163PF-BF750 K4M28163PF-BG750
OCR Text 54fbga FEATURES * 1.8V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequentia...
Description 2M x 16Bit x 4 Banks Mobile SDRAM in 54fbga 200万16 × 4银行4FBGA移动SDRAM
8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 0.80 MM PITCH, LEAD FREE, FBGA-54
8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, FBGA-54
8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 0.80 MM PITCH, FBGA-54

File Size 111.60K  /  12 Page

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    K4S641633H-C K4S641633H-F1H K4S641633H-F1L K4S641633H-F75 K4S641633H-G K4S641633H-L K4S641633H-N K4S641633H-R K4S641633H

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4S641633H-C K4S641633H-F1H K4S641633H-F1L K4S641633H-F75 K4S641633H-G K4S641633H-L K4S641633H-N K4S641633H-R K4S641633H-RBE K4S641633H-RE K4S641633H-RL1L0
OCR Text 54fbga FEATURES * 3.0V & 3.3V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Se...
Description 4M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
1M x 16Bit x 4 Banks Mobile SDRAM in 54fbga 100万16 × 4银行4FBGA移动SDRAM

File Size 110.06K  /  12 Page

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S511533F K4S511533F-YC K4S511533F-F1H K4S511533F-F1L K4S511533F-F75 K4S511533F-L
OCR Text 54fbga FEATURES * 3.0V & 3.3V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Se...
Description 8M x 16Bit x 4 Banks Mobile SDRAM in 54fbga 8米16 × 4银行4FBGA移动SDRAM

File Size 105.17K  /  12 Page

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    K4M51163LENBSP K4M51163LE K4M51163LE-F K4M51163LE-YC K4M51163LE-YF1L K4M51163LE-YPL K4M51163LE-L K4M51163LE-YL K4M51163L

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4M51163LENBSP K4M51163LE K4M51163LE-F K4M51163LE-YC K4M51163LE-YF1L K4M51163LE-YPL K4M51163LE-L K4M51163LE-YL K4M51163LE-YPF1H K4M51163LE-YPF1L
OCR Text 54fbga FEATURES * 2.5V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequentia...
Description 8M x 16Bit x 4 Banks Mobile SDRAM in 54fbga 8米16 × 4银行4FBGA移动SDRAM
From old datasheet system

File Size 110.35K  /  12 Page

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S51153PF-YF K4S51153PF K4S51153PF-YPF1L K4S51153PF-YF1L K4S51153PF-YF75 K4S51153PF-YF90 K4S51153PF-YPF K4S51153PF-YF1L0 K4S51153PF-YF750 K4S51153PF-YF900
OCR Text 54fbga FEATURES * VDD/VDDQ =1.8V/1.8V. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequent...
Description 32M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54
8M x 16Bit x 4 Banks Mobile SDRAM in 54fbga 8米16 × 4银行4FBGA移动SDRAM
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 FBGA-54
From old datasheet system

File Size 104.82K  /  12 Page

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    SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4M64163PK K4M64163PK-BE75 K4M64163PK-RE75 K4M64163PK-RG75 K4M64163PK-RG90 K4M64163PK-BC1L K4M64163PK-BC75 K4M64163PK-BC90 K4M64163PK-BE1L K4M64163PK-BE90 K4M64163PK-BF1L K4M64163PK-BF75 K4M64163PK-BF90 K4M64163PK-BG1L K4M64163PK-BG75 K4M64163PK-BG90 K4M64163PK-RC1L K4M64163PK-RC75 K4M64163PK-RC90 K4M64163PK-RE1L K4M64163PK-RE90 K4M64163PK-RF1L K4M64163PK-RF75 K4M64163PK-RF90 K4M64163PK-RG1L K4M64163PK-RF900
OCR Text 54fbga FEATURES * 1.8V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequentia...
Description 4M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
1M x 16Bit x 4 Banks Mobile SDRAM in 54fbga 100万16 × 4银行4FBGA移动SDRAM

File Size 111.54K  /  12 Page

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    K4M51163PC-RBC K4M51163PC-RBF1L K4M51163PC-RBF90 K4M51163PC-RC K4M51163PC-RF1L K4M51163PC-RG K4M51163PC-R K4M51163PC-RBE

TriQuint Semiconductor, Inc.
Jameco Electronics
Anpec Electronics, Corp.
SAMSUNG[Samsung semiconductor]
Part No. K4M51163PC-RBC K4M51163PC-RBF1L K4M51163PC-RBF90 K4M51163PC-RC K4M51163PC-RF1L K4M51163PC-RG K4M51163PC-R K4M51163PC-RBE K4M51163PC-RBF75 K4M51163PC-RBG K4M51163PC-RE K4M51163PC-RF75 K4M51163PC-RF90 K4M51163PC-RG1L0 K4M51163PC-BE900 K4M51163PC-BE1L0 K4M51163PC-RG900 K4M51163PC-RF1L0 K4M51163PC-RF900
OCR Text 54fbga FEATURES * * * * 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequentia...
Description 32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 FBGA-54
8M x 16Bit x 4 Banks Mobile SDRAM in 54fbga

File Size 111.87K  /  12 Page

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For 54fbga Found Datasheets File :: 30    Search Time::1.562ms    
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