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5.70-5.90ghz Datasheet PDF File

For 5.70-5.90ghz Found Datasheets File :: 47 Search Time::2.016ms
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					Sony Corporation
Part No.	CXG1051AFN
OCR Text	... Low current consumption: IDD = 5.5mA Typ. (When no signal) * High conversion gain: Gc = 20.5dB Typ. (f = 1.9GHz) * Low distortion: Input IP...70 250 -55 -60 275 -25 -25 mA V dBm dB dBc dBc kHz dBc dBc 3. Antenna Switch Receiver Block + Low...
Description	Power Amplifier/Antenna Switch Low Noise Down Conversion Mixer for PHS
File Size	123.94K / 8 Page	View it Online	Download Datasheet

					SONY[Sony Corporation]
Part No.	CXG1053FN
OCR Text	...ly voltage * Input power 6 1.5 550 3 V V mA W VCTL 6 V VDD PRF 6 +10 V dBm <Common to each block> * Channel tempe...70 250 Symbol Measurement conditions Min. Typ. 150 0.25 0.6 Max. Unit mA V dBm dB -55 dBc -60 dBc 27...
Description	Power Amplifier/Antenna Switch Low Noise Amplifier/Down Conversion Mixer for PHS
File Size	132.23K / 8 Page	View it Online	Download Datasheet

					SONY[Sony Corporation]
Part No.	CXG1096FN
OCR Text	... Low current consumption: IDD = 5.5mA Typ (When no signal) * High conversion gain: Gc = 19.5dB Typ (f = 1.9GHz) * Low distortion: Input IP3 ...70 250 -55 -60 275 -25 -25 Symbol Measurement conditions (Ta = 25C) Min. Typ. Max. Unit 150 0....
Description	Power Amplifier/Antenna Switch Low Noise Down Conversion Mixer for PHS
File Size	120.22K / 7 Page	View it Online	Download Datasheet

					Mitsubishi
Part No.	MGF0921A 0921A
OCR Text	...ltage Ratings -15 -15 1800 -5.0 15 1 175 -65 to +175 Unit V V mA mA mA W C C VGDO Gate to drain breakdown voltage ID IGR IGF PT T...70 Po Vds=10V VDS=6V Id(off)=500mA ID=0.1A 35 f=1.9GHz f=1.9GHz 30 25 Po(dBm) PAE 60 50 4...
Description	L & S BAND GaAs FET From old datasheet system
File Size	85.84K / 3 Page	View it Online	Download Datasheet

					SONY[Sony Corporation]
Part No.	CXG7001FN
OCR Text	... Low current consumption: IDD = 5.5mA Typ. (When no signal) * High conversion gain: Gc = 20.5dB Typ. (f = 1.9GHz) * Low distortion: Input IP...70 250 Symbol Measurement conditions Min. Typ. Max. Unit 150 0.04 0.25 0.60 mA V dBm dB -55 dBc -60 ...
Description	Power Amplifier/Antenna Switch Low Noise Down Conversion Mixer for PHS
File Size	115.10K / 8 Page	View it Online	Download Datasheet

					Fairchild Semiconductor
Part No.	FMPA2151
OCR Text	5 GHz and 4.9-5.9 GHz Dual Band Linear Power Amplifier Module (Preliminary) May 2005 FMPA2151 2.4-2.5 GHz and 4.9-5.9 GHz Dual Band Li...70 0.30 1.02 TYP. 0.30 TYP. 0.65 TYP. 0.10 TYP. 0.30 TYP. 0.650 2.70 4.000.10 BOTTOM ...
Description	2.4 - 2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power 2.4-2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power Amplifier Module (Preliminary)
File Size	80.55K / 6 Page	View it Online	Download Datasheet

					Infineon Technologies AG
Part No.	BFP740F
OCR Text	... Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise figure F = 0.75 dB at 6 GHz * High maximum stable gain Gms = 27.5 dB at 1....70 1.32 99.5 10 570 1.11 298 fA fA A m V fF m mV eV K All parameters are ready to use, no scalli...
Description	NPN Silicon Germanium RF Transistor
File Size	154.27K / 10 Page	View it Online	Download Datasheet

					Mitsubishi Electric Semiconductor
Part No.	MGF0916A
OCR Text	...re Ratings -8 -8 250 -0.6 1.5 1.5 175 -65 to +175 (Ta=25C) Unit V V mA mA mA W C C Electrical characteristics Symbol IDSS VGS(o...70 Max. 250 -4.5 100 Unit mA V mS dBm % dB dB C/W *1:Channel to case / Above parameters, r...
Description	L & S BAND GaAs FET ( SMD non - matched )
File Size	43.08K / 4 Page	View it Online	Download Datasheet

					INFINEON[Infineon Technologies AG]
Part No.	BFP540ESD
OCR Text	...V (HBM) * Outstanding G ms = 21.5 dB Noise Figure F = 0.9 dB * Gold metallization for high reliability * SIEGET 45 - Line * Short term desc...70 80 0 10 20 30 40 C 50 60 70 80 90 100 I [mA] I [mA] Power gain Gma, G...
Description	NPN Silicon RF Transistor
File Size	224.54K / 9 Page	View it Online	Download Datasheet

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