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Vishay Semiconductors
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Part No. |
BA283-TAP
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OCR Text |
...e f = 100 mhz, v r = 1 v c d 1.5 pf f = 100 mhz, v r = 3 v ba282 c d 1.25 pf ba283 c d 1.2 pf dynamic forward resistance f = 200 mhz, i f = 3 ma ba282 r f 0.7 ba283 r f 1.2 f = 200 mhz, i f = 10 ma ba282 r f 0.5 ba283 r f 0.9 revers... |
Description |
DIODE SILICON, VHF BAND, MIXER DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Microwave Mixer Diode
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File Size |
104.86K /
3 Page |
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VISHAY SEMICONDUCTORS
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Part No. |
AS34-TAP
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OCR Text |
...00 lx, v r , t j = 125 c i r 0.5 a e 300 lx, v r = 15v bas33 i r 0.5 1 na e 300 lx, v r = 30 v bas34 i r 0.5 1 na breakdown voltage i r = 5 a, t p /t = 0.01, t p = 0.3 ms bas33 v (br) 40 v bas34 v (br) 70 v diode capacitance v r... |
Description |
0.2 A, 70 V, SILICON, SIGNAL DIODE, DO-35
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File Size |
89.27K /
3 Page |
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it Online |
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Vishay Semiconductors
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Part No. |
BAT82S-TAP
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OCR Text |
... u nction temperat u re (c) 0 0.5 1 1.5 2.0 i- for w ard c u rrent (ma) v f - for w ard v oltage ( v ) 15796 f t j = 25 c t j = 125 c 0.1 1 10 100 1000 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1 10 100 v r - re v erse v oltag... |
Description |
BAT81S, BAT82S, BAT83S Small Signal Schottky Diodes
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File Size |
74.42K /
3 Page |
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it Online |
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Vishay Semiconductors
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Part No. |
BAT42-TAP
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OCR Text |
...urrent (1) t p < 1 s, ? < 0.5 i frm 500 ma surge forward current (1) t p < 10 ms i fsm 4a power di ssipation (1) t amb = 65 c p tot 200 mw thermal characteristics (t amb = 25 c, unless otherwise specified) parameter test condition... |
Description |
DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Signal Diode
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File Size |
79.44K /
4 Page |
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it Online |
Download Datasheet
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Price and Availability
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