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  2sa1160 Datasheet PDF File

For 2sa1160 Found Datasheets File :: 7    Search Time::1.078ms    
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    SHENZHEN YONGERJIA INDUSTRY CO.,LTD
Part No. 2sa1160
OCR Text 2sa1160 transistor (pnp) feature power dissipation p cm : 0.9 w (tamb=25 ) collector current i cm: -2a collector-base voltage v (br)cbo : -20 v operating and storage jun...
Description TRANSISTOR (PNP)
File Size 140.98K  /  1 Page

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    2SA1160

TRANSYS Electronics Limited
Part No. 2sa1160
OCR Text 2sa1160 FEATURE Power dissipation TRANSISTOR (PNP) 2. COLLECTOR 3. BASE PCM : 0.9 W (Tamb=25) Collector current ICM: -2A Collector-base voltage V(BR)CBO: -20 V Operating and storage junction temperature range TJ, Tstg: -55 to +150...
Description Plastic-Encapsulated Transistors
File Size 60.94K  /  1 Page

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    2SA1160 E000473

TOSHIBA[Toshiba Semiconductor]
Part No. 2sa1160 E000473
OCR Text
Description From old datasheet system
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
File Size 152.12K  /  2 Page

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    2SA116009

Toshiba Semiconductor
Part No. 2sa116009
OCR Text 2sa1160 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2sa1160 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm * High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = ...
Description Strobe Flash Applications Medium Power Amplifier Applications
File Size 151.88K  /  4 Page

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    2SA116007 2SA1160

Toshiba Semiconductor
Part No. 2sa116007 2sa1160
OCR Text 2sa1160 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2sa1160 Strobe Flash Applications Medium Power Amplifier Applications * High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = -1 V, IC = -0.5...
Description Strobe Flash Applications Medium Power Amplifier Applications
File Size 145.18K  /  4 Page

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