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Mitsubishi Electric Corporation
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| Part No. |
MGF0915A
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| OCR Text |
... high output power po=36.5 dbm(typ.) @f=1.9ghz,pin=23dbm ? high power gain gp=14.5 db(typ.) @f=1.9ghz ? high power added effi...70 80 pae(%) gp pae po vds=10v id=0.8a f=1.9ghz im3,po(scl) vs. pi(scl) -40 -30 -20 -10 0 10 20... |
| Description |
L & S BAND GaAs FET[ SMD non - matched ]
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| File Size |
1,318.88K /
48 Page |
 View
it Online |
Download Datasheet
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Mitsubishi
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| Part No. |
MGF0921A 0921A
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| OCR Text |
...ltage
Ratings
-15 -15 1800 -5.0 15 1 175 -65 to +175
Unit
V V mA mA mA W C C
VGDO Gate to drain breakdown voltage ID IGR IGF PT T...70
Po
Vds=10V VDS=6V Id(off)=500mA ID=0.1A 35 f=1.9GHz f=1.9GHz
30 25 Po(dBm)
PAE
60 50 4... |
| Description |
L & S BAND GaAs FET
From old datasheet system
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| File Size |
85.84K /
3 Page |
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it Online |
Download Datasheet |
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Excelics Semiconductor
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| Part No. |
EIC7179-8
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| OCR Text |
...nce matched to 50 ohms ? +39.5 dbm output power at 1db compression ? 9 db power gain at 1db compression ? 30% power added efficienc...70.860 2.561 25.780 0.061 -30.980 0.255 155.400 6.75 0.693 -96.200 2.913 -8. 850 0.078 -66... |
| Description |
Internally Matched Power FET
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| File Size |
200.63K /
4 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGF0919A
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| OCR Text |
...0 260 30 37 19 1.2 17 Max. 800 -5.0 25
Unit
mA V mS dBm % dB dB C/W
*1:Channel to case /
Above parameters, ratings, limits are sub...70
30
60
25
Po
50 Gp(dBm)PAE(%)
Po(dBm)
20
PAE
40
15
Gp
30
10
... |
| Description |
L & S BAND GaAs FET [ SMD non matched ]
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| File Size |
42.74K /
4 Page |
View
it Online |
Download Datasheet |
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5.70-5.90ghz Found Datasheets File :: 47 Search Time::5.875ms
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