page v1.0 1 + 0 3 ' p-channel enhancement mode power mosfet description the + 0 3 ' uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. this device is suitable for use as a load switch or in pwm applications. general features v ds = -20v,i d = -20 a r ds(on) < 28m ? @ v gs =-4.5v r ds(on) < 40m ? @ v gs =-2.5v high power and current handing capability lead free product is acquired surface mount package application motor drive load switch power management package marking and ordering information device marking device device package reel size tape width quantity + 0 3 ' + 0 3 ' ' ) 1 ; / ?330mm 12mm 2500 units absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -20 v gate-source voltage v gs 12 v drain current-continuous i d -20 a drain current-pulsed (note 1) i dm -60 a maximum power dissipation p d 3.1 w operating junction and st orage temperature range t j ,t stg -55 to 150 thermal characteristic thermal resistance,junction-to-ambient (note 2) r ja 42 /w electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =-250 a -20 - - v marking and pin assignment d g s schematic diagram
page v1.0 2 zero gate voltage drain current i dss v ds =-20v,v gs =0v - - -1 a gate-body leakage current i gss v gs =12v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =-250 a -0.5 -0.7 -1.4 v v gs =-4.5v, i d =-6a - 22 28 m ? drain-source on-state resistance r ds(on) v gs =-2.5v, i d =-5a 32 40 m ? forward transconductance g fs v ds =-15v,i d =-6a - 17 - s dynamic characteristics (note4) input capacitance c lss - 2100 - pf output capacitance c oss - 498 - pf reverse transfer capacitance c rss v ds =-10v,v gs =0v, f=1.0mhz - 300 - pf switching characteristics (note 4) turn-on delay time t d(on) - 25 - ns turn-on rise time t r - 30 - ns turn-off delay time t d(off) - 70 - ns turn-off fall time t f v dd =-10v, r l =10 ? , v gs =-4.5v,r gen =6 ? - 50 - ns total gate charge q g - 17 - nc gate-source charge q gs - 4.1 - nc gate-drain charge q gd v ds =-10v,i d =-6a,v gs =-4.5v - 4.3 - nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =-20a - - -1.2 v notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production + 0 3 '
page v1.0 3 typical electrical and thermal characteristics figure 1 switching test circuit t j -junction temperature( ) figure 3 power dissipation vds drain-source voltage (v) figure 5 output characteristics v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2 switching waveforms t j -junction temperature( ) figure 4 drain current i d - drain current (a) figure 6 drain-source on-resistance p d power(w) i d - drain current (a rdson on-resistance(m ) i d - drain current (a) + 0 3 '
page v1.0 4 vgs gate-source voltage (v) figure 7 transfer characteristics vgs gate-source voltage (v) figure 9 rdson vs vgs qg gate charge (nc) figure 11 gate charge t j -junction temperature( ) figure 8 drain-source on-resistance vds drain-source voltage (v) figure 10 capacitance vs vds vsd source-drain voltage (v) figure 12 source- drain diode forward i d - drain current (a) rdson on-resistance(m ) vgs gate-source voltage (v) normalized on-resistance c capacitance (pf) i s - reverse drain current (a) + 0 3 '
page v1.0 5 vds drain-source voltage (v) figure 13 safe operation area square wave pluse duration(sec) figure 14 normalized maximum transient thermal impedance r(t),normalized effective transient thermal im p edance i d - drain current (a) + 0 3 '
page v1.0 6 + 0 3 ' 6 dfn5x6-8l package information
page v1.0 7 attention: any and all h&m semi products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliabilit y, such as life-support systems, aircraft' s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your h&m semi representative nearest you before us ing any h&m semi products described or contained herein in such applications. h&m semi assumes no responsibility for equipment failu res that result from us ing products at values that exceed, even momentarily, rated values (such as maximum ratings, operati ng condition ranges, or other parameters) listed in products specifications of any and al l h&m semi products described or contained herein. specifications of any and all h&m semi products described or contained herein st ipulate the performance, characteristics, and functions of the described products in the independent state, and ar e not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer?s products or equipment. to verify symptoms and states that cannot be evaluated in an in dependent device, the customer s hould always evaluate and test devices mounted in the customer?s products or equipment. h&m semiconductor co.,ltd . strives to supply hi gh-quality high-reliability pr oducts. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger hum an lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circui ts and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all h&m semi products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by an y means, electronic or mechanical, including photocopying and recording, or any information storage or retrieva l system, or otherwise, without the prior written permission of h&m semiconductor co.,ltd . information (including circuit diagrams and circuit parameter s) herein is for example only ; it is not guaranteed for volume production. h&m semi believes information herein is accu rate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the h&m semi product that you intend to use. this catalog provides information as of sep.2010. specific ations and information herein are subject to change without notice. + 0 3 '
|
