a p94t07gh/j-hf advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 75v lower on-resistance r ds(on) 8m fast switching characteristic i d 75a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 1.2 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data and specifications subject to change without notice total power dissipation 125 -55 to 175 201501273 thermal data parameter 1 maximum thermal resistance, junction-ambient (pcb mount) 4 + 20 drain current, v gs @ 10v 3 75 operating junction temperature range -55 to 175 drain current, v gs @ 10v 58 pulsed drain current 1 300 storage temperature range total power dissipation 4 2.4 halogen-free product parameter rating drain-source voltage 75 gate-source voltage g d s g d s to-251(j) g d s to-252(h) a p94t07 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the to-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. the through-hole version (ap94t07gj) are available for low-profile applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 75 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =40a - - 8 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 5 v g fs forward transconductance v ds =10v, i d =40a - 55 - s i dss drain-source leakage current v ds =60v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =40a - 58 92 nc q gs gate-source charge v ds =60v - 14 - nc q gd gate-drain ("miller") charge v gs =10v - 29 - nc t d(on) turn-on delay time 2 v ds =40v - 13 - ns t r rise time i d =40a - 80 - ns t d(off) turn-off delay time r g =1 -26- ns t f fall time v gs =10v - 12 - ns c iss input capacitance v gs =0v - 2350 3760 pf c oss output capacitance v ds =25v - 390 - pf c rss reverse transfer capacitance f=1.0mhz - 245 - pf r g gate resistance f=1.0mhz - 1.3 - ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =40a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =10a, v gs =0 v , - 46 - ns q rr reverse recovery charge di/dt=100a/s - 83 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.package limitation current is 75a. 4.surface mounted on 1 in 2 copper pad of fr4 board this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 ap94t07gh/j-hf
a p94t07gh/j-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 40 80 120 160 0.0 2.0 4.0 6.0 8.0 10.0 12.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =175 o c 10v 9.0v 8.0v 7.0v v g =6.0v 0 50 100 150 200 250 0.0 4.0 8.0 12.0 16.0 20.0 24.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 9.0v 8.0v 7.0v v g = 6.0v 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 0 50 100 150 200 t j , junction temperature ( o c) normalized r ds(on) i d =40a v g =10v 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =175 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 200 t j , junction temperature ( o c ) normalized v gs(th) 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 200 t j , junction temperature ( o c) normalized bv dss
ap94t07gh/j-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 1 10 100 1000 0.1 1 10 100 1000 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 12 0 20406080 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =40a v ds =40v v ds =45v v ds =60v 0 1000 2000 3000 4000 1 5 9 13 17 21 25 29 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge operation in this area limited by r ds(on)
ap94t07gh/j-hf marking information to-251 to-252 5 part numbe r package code meet rohs requirement for low voltage mosfet only 94t07gj ywwsss date code (ywwsss) y last digit of the year ww week sss sequence part numbe r package code date code (ywwsss) y last digit of the year ww week sss sequence 94t07gh ywwsss meet rohs requirement for low voltage mosfet only
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