elektronische bauelemente PZT949 pnp transistor silicon planar high current gain transistor 18-nov-2009 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 1 base 3 emitter collector 2 4 top view 1 2 3 4 a m b d l k f g h j e c rohs compliant product a suffix of -c specifies halogen & lead-free application PZT949 is designed for general purpose switching an d amplifier applications. features 6amps continuous current, up to 20amps pulse curren t very low saturation voltage marking maximum ratings* (tamb=25 c, unless otherwise specified) parameter symbol value unit collector to base voltage v cbo -50 v collector to emitter voltage v ceo -30 v emitter to base voltage v ebo -6 v collector current (dc) i c -5.5 a collector current (pulse) i cm -20 a total power dissipation p d 3 w junction, storage temperature t j , t stg 150, -55~150 c *the power which can be dissipated assuming the dev ice is mounted in typical manner on a pcb with copp er equal to 2 inches x 2 inches electricalcharacteristics (tamb=25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector - base breakdown voltage bv cbo -50 - - v i c = -100 a , i e = 0 collector - emitter breakdown voltage (with real device limit) bv cer -50 - - v i c = -1 a , rb Q 1k collector - emitter breakdown voltage bv ceo -30 - - v i c = -10ma, i b = 0 emitter - base breakdown voltage bv ebo -6 - - v i e = -100 a ,i c = 0 collector base cut - off current i cbo - - -50 na v cb = -40v, i e = 0 collector base cut - off current (with real device limit) i cer - - -50 na v cb = -40v ,r Q 1k emitter base cut - off current i ebo - - -10 na v eb = -6v, i c = 0 *v ce(sat)1 - - -75 mv i c = -0.5a, i b = -20 ma *v ce(sat)2 - - -140 mv i c = -1.0a, i b = -20 ma *v ce(sat)3 - - -270 mv i c = -2.0a, i b = -200 ma collector - emitter saturation voltage *v ce(sat)4 - - -440 mv i c = -5.5a, i b = -500 ma *v be(sat) - - -1.25 v i c = -5.5a, i b = -500 ma base - emitter voltage *v be(on) - - -1.06 v v ce = -1v, i c = -5.5 a *h fe 1 100 - - v ce = -1v, i c = -10 ma *h fe 2 100 - 300 v ce = -1v, i c = -1 a *h fe 3 75 - - v ce = -1v, i c = -5 a dc current gain *h fe 4 - 35 - v ce = -2v, i c = -20 a transition frequency f t - 100 - mhz v ce = -10v, i c = -100ma, f = 50 mhz collector output capacitance c ob - 122 - pf v cb = -10 v, i e =0, f = 1 mhz turn-on t on - 120 - ns switching time turn-off t off - 130 - ns v cc = -10 v, i c = -4 a, i b1 = -i b2 = -400 ma *measured under pulse condition. pulse width = 300 s, duty cycle Q 2%. millimeter millimeter ref. min. max. ref. min. max. a 6.30 6.70 g 0.02 0.10 b 6.70 7.30 h 1.50 2.00 c 3.30 3.70 j 0.25 0.35 d 1.42 1.90 k 0.85 1.05 e 4.60 ref. l 2.30 ref. f 0.60 0.80 m 2.90 3.10 sot-223 9 4 9 = date code
elektronische bauelemente PZT949 pnp transistor silicon planar high current gain transistor 18-nov-2009 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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