61312 tkim/20409pa msim tc-00001830 no. a1406-1/7 http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 atp104 p-channel power mosfet ? 30v, ? 75a, 8.4m , single atpak stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. 1 : gate 2 : drain 3 : source 4 : drain atpak 0.7 0.4 0.55 9.5 7.3 0.5 1.7 4.6 6.05 13 2 6.5 0.6 4 0.8 0.5 1.5 0.4 2.6 4.6 0.4 0.1 2.3 2.3 features ? low on-resistance ? large current ? slim package ? 4.5v drive ? halogen free compliance ? protection diode in speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss --30 v gate-to-source voltage v gss 20 v drain current (dc) i d --75 a drain current (pw 10 s) i dp pw 10 s, duty cycle 1% --225 a allowable power dissipation p d tc=25 c60w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 130 mj avalanche current *2 i av 38 a note : * 1 v dd =15v, l=100 h, i av =38a * 2 l 100 h, single pulse package dimensions unit : mm (typ) 7057-001 ordering number : ena1406a ATP104-TL-H product & package information ? package : atpak ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel packing type: tl marking electrical connection tl atp104 lot no. 1 3 4,2
atp104 no. a1406-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d = -- 1ma, v gs =0v --30 v zero-gate voltage drain current i dss v ds = -- 30v, v gs =0v -- 1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds = -- 10v, i d = -- 1ma --1.2 --2.6 v forward transfer admittance | yfs | v ds = -- 10v, i d = -- 3 8a 70 s static drain-to-source on-state resistance r ds (on)1 i d = -- 38a, v gs = -- 10v 6.4 8.4 m r ds (on)2 i d = -- 19a, v gs = -- 4.5v 9.6 13.5 m input capacitance ciss v ds =--10v, f=1mhz 3950 pf output capacitance coss 880 pf reverse transfer capacitance crss 610 pf turn-on delay time t d (on) see speci ed test circuit. 24 ns rise time t r 520 ns turn-off delay time t d (off) 290 ns fall time t f 260 ns total gate charge qg v ds =--15v, v gs =--10v, i d =--75a 76 nc gate-to-source charge qgs 18 nc gate-to-drain ?miller? charge qgd 13 nc diode forward voltage v sd i s =--75a, v gs =0v --1.02 --1.5 v switching time test circuit ordering information device package shipping memo ATP104-TL-H atpak 3,000pcs./reel pb free and halogen free pw=10 s d.c. 1% p. g 50 g s d i d = --38a r l =0.39 v dd = --15v v out v in 0v --10v v in atp104
atp104 no. a1406-3/7 | y fs | -- i d r ds (on) -- v gs r ds (on) -- tc i d -- v ds i d -- v gs (off) i s -- v sd sw time -- i d drain-to-source voltage, v ds -- v drain current, i d -- a cutoff voltage, v gs (off) -- v drain current, i d -- a gate-to-source voltage, v gs -- v case temperature, tc -- c static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m drain current, i d -- a drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf diode forward voltage, v sd -- v source current, i s -- a forward transfer admittance, | y fs | -- s ciss, coss, crss -- v ds it14391 it14388 --50 --25 150 0 --30 --10 --15 --20 --25 -- 5 1000 2 it14395 it14393 it14392 --0.1 --1.0 23 57 3 100 --1.4 --1.2 --1.0 --0.6 --0.4 --0.8 --0.2 --0.001 --0.01 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 5 2 7 3 2 --0.1 --1.0 --10 --100 7 5 2 7 2 3 10 1.0 7 5 2 10000 2 --10 357 --100 57 23 --0.1 --1.0 23 57 2 --10 357 --100 57 23 0 25 50 75 100 125 3 5 7 3 5 7 2 75 c 25 c tc= --25 c --25 c tc=75 c single pulse tc= --25 c 25 c 75 c v ds = --10v tc=75 c 25 c --25 c ciss crss it14394 10 100 2 3 2 5 3 7 1000 2 3 5 7 t d (off) v dd = --15v v gs = --10v f=1mhz t r --0.5 --1.0 --2.0 --1.5 0 0 -- 5 --10 --75 --65 --70 --55 --60 --45 --50 --35 --40 --25 --30 --15 --20 0 --10 --20 --100 --70 --80 --60 --50 --90 --40 --30 0 it14390 -- 2 0 --4 --6 --8 --10 --16 --12 --14 2 18 8 14 12 10 16 4 6 4 2 10 6 30 26 24 22 18 16 14 12 8 20 28 it14389 --0.5 --1.5 --2.0 --1.0 --2.5 --4.0 --4.5 --3.5 --3.0 0 tc=25 c --4.0v v gs = --3.5v --16.0v v ds = --10v t f 25 c v gs = --4.5v, i d = --19a v gs = --10v, i d = --38a --8.0v coss t d (on) --4.5v --6.0v --10.0v tc=25 c single pulse i d = --19a --38a v gs =0v single pulse
atp104 no. a1406-4/7 v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v e as -- ta avalanche energy derating factor -- % ambient temperature, ta -- c 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 it10478 it14398 it14397 it14396 01020 50 40 70 60 30 80 0 -- 2 -- 4 -- 6 -- 1 -- 3 -- 5 -- 8 -- 7 -- 9 --10 v ds = --15v i d = --75a a s o drain-to-source voltage, v ds -- v drain current, i d -- a p d -- tc allowable power dissipation, p d -- w case temperature, tc -- c --0.1 --1.0 2 3 5 7 2 3 5 7 2 3 5 2 3 5 7 --10 --0.1 i dp = --225a i d = --75a 100 s 1ms 10ms 100ms dc operation operation in this area is limited by r ds (on). --1.0 23 57 2 --10 357 235 10 s --100 0 0 20 40 60 80 100 140 120 60 50 30 20 40 10 70 160 pw 10 s tc=25 c single pulse
atp104 no. a1406-5/7 taping speci cation ATP104-TL-H
atp104 no. a1406-6/7 outline drawing land pattern example ATP104-TL-H mass (g) unit 0.266 * for reference mm unit: mm 6.5 6.7 1.6 2 2.3 2.3 1.5
atp104 ps no. a1406-7/7 note on usage : since the atp104 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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