p p j s68 3 5 march 6,2015 - rev.00 page 1 2 0 v p - c hannel enhancement mode mosfet C esd protected voltage - 2 0 v current - 500m a sot - 23 6l unit: inch(mm) f eatures ? low voltage d rive (1.2v) . ? advanced trench process technology ? specially designed for load s wit ch, pwm application, etc. ? esd protected ? lead free in compliance wit h eu rohs 2011/65/eu directive . ? green molding compound as per iec61249 std. (halogen free) mechanical data ? case: sot - 2 3 6l package ? terminals : solderable per mil - std - 750, method 2026 ? a pprox. weight: 0.000 5 ounces, 0.0 141 grams ? marking: s g 5 parameter symbol limit units drain - source voltage v ds - 2 0 v gate - source voltage v gs + 10 v continuous drain current i d - 500 m a pulsed drain current (note 4 ) i dm - 1 000 m a power dissipation t a =25 o c p d 500 m w derate above 25 o c 4 m w/ o c operatin g junction an d storage temperature range t j ,t stg - 55~150 o c typical thermal resistance - j unction to ambient (note 3 ) r ja 25 0 o c /w maximum ratings and thermal characteristics (t a =25 o c unless otherwise noted)
p p j s68 3 5 march 6,2015 - rev.00 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symbol test condition min. typ. max. units static drain - source breakdown voltage b v dss v gs = 0 v, i d = - 25 0ua - 2 0 - - v gate threshold voltage v gs(th) v ds =v gs , i d = - 250 ua - 0.3 - 0.59 - 1.0 v drain - source on - state resistance r ds(on) v gs = - 4.5 v, i d = - 500m a - 0. 85 1 . 2 gs = - 2.5 v, i d = - 200m a - 0.98 1 . 5 v gs = - 1.8 v, i d = - 100m a - 1 .15 2 . 2 v gs = - 1.5 v, i d = - 50m a - 1 .33 3.6 v gs = - 1.2 v, i d = - 10m a - 1.5 6.0 zero gate voltage drain current i dss v ds = - 16 v, v gs =0v - - - 1 u a gate - source leakage current i gss v gs = + 8 v, v ds =0v - + 2 + 10 u a dynamic (note 5 ) total gate charge q g v ds = - 10 v, i d = - 500m a, v gs = - 4 .5v (note 1 , 2 ) - 1.4 - nc gate - source charge q gs - 0.19 - gate - drain charge q gd - 0.2 - input capacitance ciss v ds = - 10 v, v gs = 0 v, f=1.0mhz - 38 - pf output capacitance coss - 15 - reverse transfer capacitance crss - 9 - turn - on delay time t d (o n) v dd = - 10 v, i d = - 500m a, v g s = - 4.5v, r g = 6 (note 1 , 2 ) - 7.2 - ns turn - on rise time tr - 21 - turn - o ff delay time t d (off) - 85 - turn - o ff fall time tf - 116 - drain - source diode maximum continuous drain - source diode forward current i s --- - - - 50 0 m a diode forward voltage v sd i s = - 500m a, v gs = 0 v - - 0.9 3 - 1. 3 v notes : 1. pulse width < 300us, duty cycle < 2% 2. essentially independent of operating temperature typical characteristics . 3. r ? ja is the sum of the junction - to - case and case - to - ambient thermal resist ance where the case thermal reference is defined as the solder mounting surface of the drain pins m ounted on a 1 inch fr - 4 with 2oz . square pad of copper . 4. the maximum current rating is package limited. 5. guaranteed by design, not subject to product ion testin g.
p p j s68 3 5 march 6,2015 - rev.00 page 3 t ypical characteristic curves fig.1 on - region characteristics fig. 2 transfer characteristics fig. 3 on - resistance vs. drain current fig. 4 on - resistance vs. junction temperature fig. 5 on - resistance variation with vgs. fig. 6 body d i ode characteristics
p p j s68 3 5 march 6,2015 - rev.00 page 4 t ypical characteristic curves fig. 7 gate - charge characteristics fig. 8 threshold voltage variation with temperature . fig. 9 capacitance vs. drain - source voltage.
p p j s68 3 5 march 6,2015 - rev.00 page 5 part no packing code version mounting pad layout p art n o packing code package type packing type marking ver sion PJS6835 _s1_00001 sot - 23 6l 3k pcs / 7 0.024 (0.60) 0 . 0 2 6 ( 0 . 6 7 ) 0 . 0 9 6 ( 2 . 4 3 ) 0.037 (0.95) 0.037 (0.95)
p p j s68 3 5 march 6,2015 - rev.00 page 6 disclaimer
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