? 2016 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 ? c to 175 ? c40 v v dgr t j = 25 ? c to 175 ? c, r gs = 1m ? 40 v v gsm transient ? 15 v i d25 t c = 25 ? c 340 a i lrms lead current limit, rms 160 a i dm t c = 25 ? c, pulse width limited by t jm 750 a i a t c = 25 ? c 170 a e as t c = 25 ? c 1.2 j i a t c = 25 ? c 340 a e as t c = 25 ? c 500 mj p d t c = 25 ? c 480 w t j -55 ... +175 ?? c t jm 175 ?? c t stg -55 ... +175 ?? c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c f c mounting force 10..65 / 2.2..14.6 n/lb weight to-263 2.5 g to-263 (7leads) 3.0 g trencht4 tm power mosfet n-channel enhancement mode avalanche rated fast intrinsic rectifier IXTA340N04T4 IXTA340N04T4-7 v dss = 40v i d25 = 340a r ds(on) ? ? ? ? ? 1.7m ? ? ? ? ? ds100700b(03/16) features ? international standard packages ? 175c operating temperature ? high current handling capability ? avalanche rated ? fast intrinsic rectifier ? low r ds(on) advantages ? easy to mount ? space savings ? high power density applications ? dc-dc converters & off-line ups ? primary-side switch ? high current switching applications symbol test conditions characteristic values (t j = 25 ? c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 ? a 40 v v gs(th) v ds = v gs , i d = 250 ? a 2.0 4.0 v i gss v gs = ? 15v, v ds = 0v ????????????? 200 na i dss v ds = v dss , v gs = 0v 5 ? a t j = 150 ? c 750 ???? a r ds(on) v gs = 10v, i d = 100a, notes 1, 2 1.7 m ? to-263 (7-leads) pins: 1 - gate 2, 3, 5 , 6 , 7 - source 4 (tab) - drain 1 7 (tab) g s g = gate d = drain s = source tab = drain to-263 aa d (tab) preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXTA340N04T4 IXTA340N04T4-7 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 115 195 s c iss 13 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1850 pf c rss 1226 pf r gi gate input resistance 1.1 ? t d(on) 23 ns t r 55 ns t d(off) 113 ns t f 40 ns q g(on) 256 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 64 nc q gd 86 nc r thjc 0.31 ?? c/w source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. i s v gs = 0v 340 a i sm repetitive, pulse width limited by t jm 1360 a v sd i f = 100a, v gs = 0v, note 1 1.4 v t rr 43 ns i rm 10 a q rm 210 nc resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 3 ? (external) i f = 150a, v gs = 0v, -di/dt = 100a/ ? s, v r = 30v notes: 1. pulse test, t ? 300 ? s, duty cycle, d ?? 2%. 2. on through-hole packages, r ds(on) kelvin test contact location must be 5mm or less from the package body. preliminary technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2016 ixys corporation, all rights reserved IXTA340N04T4 IXTA340N04T4-7 fig. 1. output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v ds - volts i d - amperes v gs = 15v 10v 8v 6v 7v 5v 6.5v fig. 3. output characteristics @ t j = 150oc 0 50 100 150 200 250 300 0 0.2 0.4 0.6 0.8 1 1.2 v ds - volts i d - amperes v gs = 15v 10v 9v 8v 7v 6v 4v 5v fig. 4. normalized r ds(on) to i d = 170a value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 170a i d = 340a fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 012345678910 v ds - volts i d - amperes v gs = 10v 7v 6v 5v 6.5v fig. 5. normalized r ds(on) to i d = 170a vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 50 100 150 200 250 300 350 i d - amperes r ds(on) - normalized v gs = 10v 15v t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 140 160 180 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit
ixys reserves the right to change limits, test conditions, and dimensions. IXTA340N04T4 IXTA340N04T4-7 fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 30 60 90 120 150 180 210 240 270 q g - nanocoulombs v gs - volts v ds = 20v i d = 170a i g = 10ma fig. 7. input admittance 0 20 40 60 80 100 120 140 160 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 v gs - volts i d - amperes t j = 150oc - 40oc 25oc v ds = 10v fig. 8. transconductance 0 50 100 150 200 250 300 350 400 450 0 20 40 60 80 100 120 140 160 180 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc v ds = 10v fig. 11. capacitance 100 1000 10000 100000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 110100 v ds - volts i d - amperes 100s 1ms 10ms 100ms r ds( on) limit t j = 175oc t c = 25oc single pulse dc external lead current limit
? 2016 ixys corporation, all rights reserved IXTA340N04T4 IXTA340N04T4-7 fig. 17. resistive turn-off switching times vs. drain current 36 38 40 42 44 46 48 50 52 160 180 200 220 240 260 280 300 320 340 i d - amperes t f - nanoseconds 85 90 95 100 105 110 115 120 125 t d(off) - nanoseconds t f t d(off) r g = 3 ? , v gs = 10v v ds = 20v t j = 25oc t j = 150oc fig. 18. resistive turn-off switching times vs. gate resistance 0 50 100 150 200 250 300 350 2 4 6 8 1012141618 r g - ohms t f - nanoseconds 0 100 200 300 400 500 600 700 t d(off) - nanoseconds t f t d(off) t j = 150oc, v gs = 10v v ds = 20v i d = 170a i d = 340a fig. 14. resistive turn-on rise time vs. drain current 52 54 56 58 60 62 64 66 160 180 200 220 240 260 280 300 320 340 i d - amperes t r - nanoseconds t j = 25oc t j = 150oc r g = 3 ? , v gs = 10v v ds = 20v fig. 15. resistive turn-on switching times vs. gate resistance 0 100 200 300 400 500 2 4 6 8 10 12 14 16 18 r g - ohms t r - nanoseconds 0 20 40 60 80 100 t d(on) - nanoseconds t r t d(on) t j = 150oc, v gs = 10v v ds = 20v i d = 170a i d = 340a fig. 16. resistive turn-off switching times vs. junction temperature 36 38 40 42 44 46 48 50 25 50 75 100 125 150 t j - degrees centigrade t f - nanoseconds 70 80 90 100 110 120 130 140 t d(off) - nanoseconds t f t d(off) r g = 3 ? , v gs = 10v v ds = 20v i d = 340a i d = 170a fig. 13. resistive turn-on rise time vs. junction temperature 50 52 54 56 58 60 62 64 25 50 75 100 125 150 t j - degrees centigrade t r - nanoseconds r g = 3 ? , v gs = 10v v ds = 20v i d = 340a i d = 170a
ixys reserves the right to change limits, test conditions, and dimensions. IXTA340N04T4 IXTA340N04T4-7 ixys ref: t_340n04t4(t6-m04) 1-27-16 fig. 19. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - k / w to-263 (ixta) outline 1 = gate 2,4 = drain 3 = source to-263 (7-lead) (ixta..7) outline e l1 e b c d1 e1 a d c2 l2 8 l3 l optional a1 a1 e1 a c c2 e b d l b2 l2 d1 l3 l4 l1 1 2 3 4 5 6 7 1 2 3 e 4 0 ? - 3 ? 0 ? - 8 ?
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