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mrf8p9040nr1 mrf8p 9040gnr1 mrf8p9040nbr1 1 rf device data freescale semiconductor rf power field effect transistors n--channel enhancement--mode lateral mosfets designed for cdma, w--cdma and lte base station applications with frequencies from 700 to 1000 mhz. can be used in class ab and class c for all typical cellular base station modulation formats. driver application ? 900 mhz ? typical single--carrier w--cdma performance: v dd =28volts,i dq = 320 ma, p out = 4.0 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency g ps (db) d (%) acpr (dbc) 920 mhz 18.9 18.9 --49.6 940 mhz 19.1 19.5 --50.1 960 mhz 19.1 19.9 --48.8 ? capable of handling 10:1 vswr, @ 32 vdc, 940 mhz, 63 watts cw output power (3 db input overdrive from rated p out ), designed for enhanced ruggedness ? typical p out @ 1 db compression point ? 42 watts cw driver application ? 700 mhz ? typical single--carrier w--cdma performance: v dd =28volts,i dq = 320 ma, p out = 4.0 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency g ps (db) d (%) acpr (dbc) 728 mhz 19.9 18.7 --49.9 748 mhz 20.1 19.1 --50.0 768 mhz 20.0 19.5 --49.9 features ? characterized with series equival ent large--signal impedance parameters and common source s--parameters ? internally matched for ease of use ? integrated esd protection ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? optimized for doherty applications ? 225 c capable plastic package ? rohs compliant ? in tape and reel. r1 suffix = 500 units, 44 mm tape width, 13 inch reel. document number: mrf8p9040n rev. 1, 10/2010 freescale semiconductor technical data 728--960 mhz, 4.0 w avg., 28 v cdma, w--cdma, lte lateral n--channel rf power mosfets mrf8p9040nr1 MRF8P9040GNR1 mrf8p9040nbr1 (top view) rf outa /v dsa figure 1. pin connections rf outb /v dsb rf ina /v gsa rf inb /v gsb note: exposed backside of the package is the source terminal for the transistors. case 1484--04, style 1 t o -- 2 7 2 w b -- 4 plastic mrf8p9040nbr1 case 1486--03, style 1 t o -- 2 7 0 w b -- 4 plastic mrf8p9040nr1 32 41 case 1487--05, style 1 t o -- 2 7 0 w b -- 4 g u l l plastic MRF8P9040GNR1 ? freescale semiconductor, inc., 2010. a ll rights reserved.
2 rf device data freescale semiconductor mrf8p9040nr1 mrf8p 9040gnr1 mrf8p9040nbr1 table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +70 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case (4) case temperature 77 c, 4.0 w cw, 28 vdc, i dq = 320 ma, 960 mhz case temperature 81 c, 40 w cw, 28 vdc, i dq = 320 ma, 960 mhz r jc 1.5 1.3 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 1b (minimum) machine model (per eia/jesd22--a115) a (minimum) charge device model (per jesd22--c101) iii (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 c table 5. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (4) zero gate voltage drain leakage current (v ds =70vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 adc on characteristics (4) gate threshold voltage (v ds =10vdc,i d = 170 adc) v gs(th) 1.5 2.3 3.0 vdc gate quiescent voltage (v dd =28vdc,i d = 320 madc, measured in functional test) v gs(q) 2.3 3.1 3.8 vdc drain--source on--voltage (v gs =10vdc,i d =0.55adc) v ds(on) 0.1 0.17 0.3 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. 4. measurement made with device in single--ended confi guration. (see figure 3, po ssible circuit topologies) (continued)
mrf8p9040nr1 mrf8p 9040gnr1 mrf8p9040nbr1 3 rf device data freescale semiconductor table 5. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (1,2,3) (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 320 ma, p out = 4.0 w avg., f = 960 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. power gain g ps 17.5 19.1 20.5 db drain efficiency d 18.0 19.9 ? % adjacent channel power ratio acpr ? --48.8 --46.0 dbc input return loss irl ? -- 1 3 -- 9 db typical broadband performance (1) (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 320 ma, p out = 4.0 w avg., single--carrier w--cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. frequency g ps (db) d (%) acpr (dbc) irl (db) 920 mhz 18.9 18.9 --49.6 -- 1 2 940 mhz 19.1 19.5 --50.1 -- 1 3 960 mhz 19.1 19.9 --48.8 -- 1 3 typical performances (1) (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 320 ma, 920--960 mhz bandwidth characteristic symbol min typ max unit p out @ 1 db compression point, cw p1db ? 42 ? w imd symmetry @ 45 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 22 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 70 ? mhz gain flatness in 40 mhz bandwidth @ p out =4.0wavg. g f ? 0.2 ? db gain variation over temperature (--30 cto+85 c) ? g ? 0.016 ? db/ c output power variation over temperature (--30 cto+85 c) ? p1db ? 0.001 ? db/ c typical broadband performance ? 700 mhz (1) (in freescale 700 mhz test fixture, 50 ohm system) v dd =28vdc,i dq = 320 ma, p out = 4.0 w avg., single--carrier w--cdma, iq magnitude cli pping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. frequency g ps (db) d (%) acpr (dbc) irl (db) 728 mhz 19.9 18.7 --49.9 -- 1 4 748 mhz 20.1 19.1 --50.0 -- 1 5 768 mhz 20.0 19.5 --49.9 -- 1 2 1. measurement made with device in single--ended confi guration. (see figure 3, po ssible circuit topologies) 2. part internally input matched. 3. measurement made with device in str aight lead configuration before any lead forming operation is applied.
4 rf device data freescale semiconductor mrf8p9040nr1 mrf8p 9040gnr1 mrf8p9040nbr1 figure 2. mrf8p9040nr1(gnr1)(nbr1 ) test circuit component layout mrf8p9040n/nb rev 1 cut out area c3 c4 b1 c1 c2 c7 c8 c9 c10 c11 c12 c5 c6 table 6. mrf8p9040nr1(gnr1)(nbr1) test circuit com ponent designations and values part description part number manufacturer b1 rf ferrite bead mpz2012s300at000 tdk c1, c4, c5, c7, c11 51 pf chip capacitors atc100b510gt500xt atc c2 5.6 pf chip capacitor atc100b5r6ct500xt atc c3 2.2 f, 50 v chip capacitor c3225x7r1h225kt tdk c6, c8 10 f, 50 v chip capacitors 293d106x9050e2te3 vishay c9 6.8 pf chip capacitor atc100b6r8ct500xt atc c10 2.0 pf chip capacitor atc100b2r0bt500xt atc c12 220 f, 63 v electrolytic capacitor 227cks050m illinois capacitor pcb 0.030 , r =3.5 ro4350b rogers
mrf8p9040nr1 mrf8p 9040gnr1 mrf8p9040nbr1 5 rf device data freescale semiconductor 4 2 2 4 2 2 single--ended quadrature combined doherty push--pull 4 4 4 4 figure 3. possible circuit topologies
6 rf device data freescale semiconductor mrf8p9040nr1 mrf8p 9040gnr1 mrf8p9040nbr1 typical characteristics irl, input return loss (db) 820 irl g ps acpr f, frequency (mhz) figure 4. output peak--to--average ratio compression (parc) broadband performance @ p out = 4.0 watts avg. -- 1 2 0 -- 3 -- 6 -- 9 15 20 19.5 19 -- 5 2 22 20 18 16 -- 4 7 -- 4 8 -- 4 9 -- 5 0 d , drain efficiency (%) d g ps , power gain (db) 18.5 18 17.5 17 16.5 16 15.5 840 860 880 900 920 940 960 980 14 -- 5 1 -- 1 5 parc parc (db) -- 0 . 3 0.1 0 -- 0 . 1 -- 0 . 2 -- 0 . 4 acpr (dbc) figure 5. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 7 0 -- 2 0 -- 3 0 -- 4 0 -- 6 0 1 100 imd, intermodulatio n distortion (dbc) -- 5 0 im3--u im3--l im5--u im5--l im7--l im7--u v dd =28vdc,p out = 45 w (pep) i dq = 320 ma, two--tone measurements (f1 + f2)/2 = center frequency of 940 mhz figure 6. output peak--to--average ratio compression (parc) versus output power 1 p out , output power (watts) -- 1 -- 3 -- 5 8 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 0 16 24 40 0 60 50 40 30 20 10 d , drain efficiency (%) -- 3 d b = 2 0 w 32 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0. 01% probab ility on ccdf d acpr parc acpr (dbc) -- 6 0 0 -- 1 0 -- 2 0 -- 4 0 -- 3 0 -- 5 0 21 g ps , power gain (db) 20 19 18 17 16 15 g ps v dd =28vdc,p out =4.0w(avg.),i dq = 320 ma single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0. 01% probab ility on ccdf -- 2 d b = 1 4 w -- 1 d b = 11 w v dd =28vdc,i dq = 320 ma, f = 940 mhz single--carrier w--cdma
mrf8p9040nr1 mrf8p 9040gnr1 mrf8p9040nbr1 7 rf device data freescale semiconductor typical characteristics 1 acpr p out , output power (watts) avg. figure 7. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 1 0 -- 2 0 14 20 0 60 50 40 30 20 d , drain efficiency (%) g ps , power gain (db) 19 18 10 100 10 -- 6 0 acpr (dbc) 17 16 15 0 -- 3 0 -- 4 0 -- 5 0 figure 8. broadband frequency response 0 24 750 f, frequency (mhz) v dd =28vdc p in =0dbm i dq = 320 ma 16 12 8 800 gain (db) 20 gain 850 900 950 1000 1050 1100 1150 irl -- 1 8 0 -- 3 -- 6 -- 9 -- 1 2 irl (db) 4--15 920 mhz v dd =28vdc,i dq = 320 ma, single--carrier w--cdma, 3.84 mhz channel bandwidth d 940 mhz 960 mhz 920 mhz 940 mhz 960 mhz input signal par = 7.5 db @ 0.01% pr obabilit y on ccdf g ps w--cdma test signal 0.0001 100 0 peak--to--average (db) figure 9. ccdf w--cdma iq magnitude clipping, single--carrier test signal 10 1 0.1 0.01 0.001 24 68 probability (%) w--cdma. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. input signal par = 7.5 db @ 0.01% probabilit y on ccdf input signal 10 -- 6 0 --100 10 (db) -- 2 0 -- 3 0 -- 4 0 -- 5 0 -- 7 0 -- 8 0 -- 9 0 3.84 mhz channel bw 7.2 1.8 5.4 3.6 0 -- 1 . 8 -- 3 . 6 -- 5 . 4 -- 9 9 f, frequency (mhz) figure 10. single--carrier w--cdma spectrum -- 7 . 2 --acpr in 3.84 mhz integrated bw +acprin3.84mhz integrated bw -- 1 0 0 13579
8 rf device data freescale semiconductor mrf8p9040nr1 mrf8p 9040gnr1 mrf8p9040nbr1 v dd =28vdc,i dq = 320 ma , p out =4.0wavg. f mhz z source ? z load ? 820 6.33 -- j6.70 6.02 -- j0.61 840 6.46 -- j6.14 5.89 + j0.00 860 6.47 -- j5.83 5.80 + j0.44 880 6.15 -- j5.53 5.59 + j0.73 900 5.77 -- j5.09 5.31 + j1.05 920 5.53 -- j4.65 5.13 + j1.44 940 5.39 -- j4.29 5.06 + j1.84 960 5.30 -- j3.95 5.03 + j2.28 980 5.26 -- j3.54 4.99 + j2.78 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 11. series equivalent source and load impedance z source z load input matching network device under test output matching network
mrf8p9040nr1 mrf8p 9040gnr1 mrf8p9040nbr1 9 rf device data freescale semiconductor alternative peak tune load pull characteristics 30 p in , input power (dbm) v dd =28vdc,i dq = 320 ma, pulsed cw, 10 sec(on), 10% duty cycle 49 47 45 31 50 48 42 p out , output power (dbm) note: load pull test fixture tuned for peak p1db output power @ 28 v 46 51 53 29 27 35 26 25 52 44 43 24 ideal actual 28 32 33 34 940 mhz 960 mhz 920 mhz 940 mhz 960 mhz 920 mhz f (mhz) p1db p3db watts dbm watts dbm 920 65 48.1 79 49.0 940 65 48.1 76 48.8 960 63 48.0 74 48.7 test impedances per compression level f (mhz) z source ? z load ? 920 p1db 4.03 -- j5.45 2.24 + j0.08 940 p1db 4.63 -- j6.15 2.21 + j0.35 960 p1db 5.57 -- j5.96 2.36 + j0.47 figure 12. pulsed cw output power versus input power @ 28 v
10 rf device data freescale semiconductor mrf8p9040nr1 mrf8p 9040gnr1 mrf8p9040nbr1 figure 13. mrf8p9040nr1(gnr1)(nbr1) test ci rcuit component layout ? 728--768 mhz mrf8p9040n/nb rev 1 cut out area b1 c3 c4 c1 c2 c7 c8 c9 c10 c11 c12 c5 c6 c13 table 7. mrf8p9040nr1(gnr1)(nbr1) test circuit com ponent designations and values ? 728--768 mhz part description part number manufacturer b1 rf ferrite bead mpz2012s300at000 tdk c1, c4, c5, c7, c11 82 pf chip capacitors atc100b820jt500xt atc c2, c9 12 pf chip capacitors atc100b120jt500xt atc c3 2.2 f, 50 v chip capacitor c3225x7r1h225kt tdk c6, c8 10 f, 50 v tantalum capacitors 293d106x9050e2te3 vishay c10 4.7 pf chip capacitor atc100b4r7ct500xt atc c12 220 f, 63 v electrolytic capacitor 227cks050m illinois capacitor c13 1.5 pf chip capacitor atc100b1r5bt500xt atc pcb 0.030 , r =3.5 ro4350b rogers
mrf8p9040nr1 mrf8p 9040gnr1 mrf8p9040nbr1 11 rf device data freescale semiconductor typical characteristics ? 728--768 mhz irl, input return loss (db) 710 irl g ps acpr f, frequency (mhz) figure 14. output peak--to--average ratio compression (parc) broadband performance @ p out = 4.0 watts avg. -- 1 3 -- 9 -- 1 0 -- 11 -- 1 2 18 22 21.6 21.2 -- 5 0 22 20 18 16 -- 4 9 --49.2 --49.4 --49.6 d , drain efficiency (%) d g ps , power gain (db) 20.8 20.4 20 19.6 19.2 18.8 18.4 720 730 740 750 760 770 780 790 14 --49.8 -- 1 4 parc parc (db) -- 0 . 3 0.1 0 -- 0 . 1 -- 0 . 2 -- 0 . 4 acpr (dbc) v dd =28vdc,p out =4.0w(avg.),i dq = 320 ma single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0. 01% probab ility on ccdf 1 acpr p out , output power (watts) avg. figure 15. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 1 0 -- 2 0 16 22 0 60 50 40 30 20 d , drain efficiency (%) g ps , power gain (db) 21 20 10 100 10 -- 6 0 acpr (dbc) 19 18 17 0 -- 3 0 -- 4 0 -- 5 0 768 mhz d g ps figure 16. broadband frequency response 0 24 550 f, frequency (mhz) v dd =28vdc p in =0dbm i dq = 320 ma 16 12 8 600 gain (db) 20 gain 650 700 750 800 850 900 950 irl -- 1 8 0 -- 3 -- 6 -- 9 -- 1 2 irl (db) 4--15 748 mhz 728 mhz 768 mhz 748 mhz 728 mhz v dd =28vdc,i dq = 320 ma, single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 7.5 db @ 0.01% pr obabilit y on ccdf
12 rf device data freescale semiconductor mrf8p9040nr1 mrf8p 9040gnr1 mrf8p9040nbr1 v dd =28vdc,i dq = 320 ma , p out =4.0wavg. f mhz z source ? z load ? 710 4.33 -- j2.57 6.05 + j1.24 720 4.23 -- j2.28 6.05 + j1.52 730 4.17 -- j1.99 6.10 + j1.81 740 4.15 -- j1.74 6.23 + j2.10 750 4.15 -- j1.53 6.45 + j2.36 760 4.13 -- j1.37 6.72 + j2.54 770 4.09 -- j1.24 7.02 + j2.64 780 4.02 -- j1.10 7.28 + j2.67 790 3.91 -- j0.93 7.47 + j2.71 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 17. series equivalent source and load impedance ? 728--768 mhz z source z load input matching network device under test output matching network
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22 rf device data freescale semiconductor mrf8p9040nr1 mrf8p 9040gnr1 mrf8p9040nbr1 product documentation and software refer to the following documents, tools and software to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an3263: bolt down mounting method for high power rf transistors and rfics in over--molded plastic packages ? an3789: clamping of high power rf transistors and rfics in over--molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file for software, do a part number search at http://www.freescale.c om, and select the ?part num ber? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 sept. 2010 ? initial release of data sheet 1 oct. 2010 ? added part number MRF8P9040GNR1, iso and case outline 1487--05, p. 1, 19--21
mrf8p9040nr1 mrf8p 9040gnr1 mrf8p9040nbr1 23 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2010. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf8p9040n rev. 1, 10/2010

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