gr 16 0 mt12 d 1200 v sic mosfet 2018 mar. rev1 .1 http://www.genesicsemi.com silicon carbide power mosfet n-channel enhancement mode features ? 150 c maximum operating temperature ? high blocking voltage with low on-resistance ? low output capacitance and gate charge ? normally-off operation at all temperatures ? halogen free, rohs complaint advantages ? reduced switching losses and minimum gate ringing ? high system efficiency ? increased power density ? increased system switching frequency maximum ratings at t c = 25 c, unless otherwise specified parameter symbol drain - source voltage v dsmax gate - source voltage (dynamic) 1 v gsmax gate - source voltage (static) 2 v gsop operating junction and storage temperature t j , t stg electrical characteristics at t c = 25 c, unless otherwise specified reverse diode characteristics at t c = 25 c, unless otherwise specified parameter symbol diode forward voltage v sd continuous diode forward current i s parameter symbol drain - source breakdown voltage v (br)dss gate threshold voltage v gs(th) drain - source leakage current i dss gate - source leakage current i gss drain - source on-state resistance r ds(on) input capacitance c iss output capacitance c oss reverse transfer capacitance c rss http://www.genesicsemi.com /sic_transistors/mosfet/ mosfet p a ckage applications gate ringing ? ev battery chargers ? switched- mode power supply (smps) ? solar inverters ? renewable energy ? motor drives ? induction heating ? uninterruptible power supply (ups) = 25 c, unless otherwise specified symbol conditions value dsmax v gs = 0 v, i d = 10 a 1200 gsmax ac (f > 1 hz) - 10/+25 gsop static - 5/+20 stg - 55 to +150 = 25 c, unless otherwise specified = 25 c, unless otherwise specified symbol conditions value min. typical sd v gs = -4 v, i d = 5 a 3.3 v gs = -4 v, i d = 5 a, t j = 150 c 3.1 v gs = -4 v v ds i d @25 r ds(on) symbol conditions value min. typical (br)dss v gs = 0 v, i d = 10 a 1200 gs(th) v ds = v gs , i d = 5 ma v ds = v gs , i d = 5 ma , t j = 150 c 2. 1. dss v ds = 1200 v, v gs = 0 v 0. v ds = 1200 v, v gs = 0 v, t j = 150 c 4 gss v gs = 20 v, v ds = 0 v ds(on) v gs = 20 v, i d = 10 a v gs = 20 v, i d = 10 a, t j = 150 c 16 225 iss v gs = 0 v, v ds = 1000 v f = 1 mhz v ac = 25 mv 520 oss 45 rss 3 1 2 3 to - 247 - 3l page 1 of 1 mode power supply (smps) value unit 1200 v 10/+25 v 5/+20 v 55 to +150 c value unit typical max. 3.3 v 3.1 20 a = 1200 v @25 c = 20 a = 160 m value unit typical max. v 2. 6 1. 8 v 0. 2 a 4 100 na 16 0 225 m 520 pf 45 pf 3 pf
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