ace 14409t p - channel enhancement mode field effect transistor ver 1.2 1 d escription the ace14409t uses advanced trench technology to provide excellent r ds(on) with low gate charge. it can be used in a wide variety of applications. features ? v ds (v)= - 3 0v ? i d = - 12 a ? r ds(on) 12 m ( v gs = - 10 v ) ? r ds(on) 18 m ( v gs = - 4.5 v ) absolute maximum ratings p arameter s ymbol m ax u nit drain - source voltage v ds - 3 0 v gate - source voltage v gs 20 v drain current (continuous) * ac t a =25 o c i d - 12 a t a =100 o c - 7.5 drain current (pulse) * b i dm - 48 power dissipation t a =25 o c p d 3 w t a =100 o c 1.8 operating and storage temperature range t j , t stg - 55 to 150 o c a: the value of r ja is measured with the device mounted on 1in2 fr - 4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. b: repetitive rating, pulse width limited by junction temp erature. c: the current rating is based on the t 10s junction to ambient thermal resistance rating. packaging type so p - 8
ace 14409t p - channel enhancement mode field effect transistor ver 1.2 2 ordering i nformation ace 14409t xx + h electrical characteristics t a =2 5 o c un less otherwise noted parame ter symbol conditions min. typ. max. unit static drain - source breakdown voltage v (br)dss v gs =0v, i d = - 250ua - 30 v zero gate voltage drain current i dss v ds = - 3 0v, v gs =0v - 1 ua gate threshold voltage v gs(th) v ds =v gs , i d s = - 250 a - 1 - 1.5 - 3 v gate leaka ge current i gss v gs = 20 v, v ds =0v 100 na static drain - source on - resistance r ds(on) v gs = - 10 v, i d = - 10 a 12 15 m v gs = - 4.5 v, i d = - 7 a 18 25 forward transconductance g fs v g s = - 10 v, i d = - 10 a 20 s diode forward voltage v sd i sd = - 2a, v gs =0v - 1.2 v switching total gate charge q g v gs = - 10 v , v ds = - 15 v, i d = - 10a , 24 nc gate - source charge q gs 3.5 gate - drain char ge q gd 6 turn - on delay time t d(on) v g s = - 10 v , v d s = - 15 v, i d = - 10a , r g en = 1 9 ns turn - on rise time t f 8 turn - off delay time t d(off) 28 turn - off fall time t f 10 dynamic input capacitance c iss v gs =0v , v ds = - 1 5 v, f= 1m hz 1750 pf output cap acitance c oss 215 reverse transfer capacitance c rss 180 fm : sop - 8 pb - free hal ogen - free
ace 14409t p - channel enhancement mode field effect transistor ver 1.2 3 typical performance characteristics
ace 14409t p - channel enhancement mode field effect transistor ver 1.2 4
ace 14409t p - channel enhancement mode field effect transistor ver 1.2 5
ace 14409t p - channel enhancement mode field effect transistor ver 1.2 6 packing information so p - 8 unit: mm
ace 14409t p - channel enhancement mode field effect transistor ver 1.2 7 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as su ed herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided i n the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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