s mhop microelectronics c orp. a stb/p440s symbol v ds v gs i dm e as 2 50 w a p d c 40 -55 to 150 i d units parameter 40 65 191 c/w vv 20 gate-source voltage drain-source voltage thermal characteristics c/w mj product summary v dss i d r ds(on) (m ) max 40v 65a 11.5 @ vgs=4.5v 8 @ vgs=10v n-channel logic level enhancement mode field effect transi stor absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a avalanche energy c maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-case thermal resistance, junction-to-ambient r jc r ja ver 1.0 www.samhop.com.tw apr,13,2009 1 t a= 25 c t a= 25 c s t b s e r ie s t o-263(dd-p ak ) g s d s t p s e r ie s t o-220 s d g features super high dense cell design for extremely low rds(on). high power and current handling capability. to-220 & to-263 package. t a= 70 c t a= 70 c 196 62.5 w a 52 green product
symbol min typ max units bv dss 40 v 1 i gss 100 na v gs(th) 1 v 6 g fs 40 s v sd c iss 1380 pf c oss 233 pf c rss 215 pf q g 27 nc 72 nc q gs 65 nc q gd 45 t d(on) 33.5 ns t r 3.2 ns t d(off) 12 ns t f ns gate-drain charge v ds =20v,v gs =0v switching characteristics gate-source charge v dd =20v i d =1a v gs =10v r gen =6 ohm total gate charge rise time turn-off delaytime v ds =20v,i d =30a,v gs =10v fall time turn-on delaytime m ohm v gs =10v , i d =30a v ds =5v , i d =30a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs , i d =250ua v ds =32v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics a 3 v gs =4.5v , i d =25a 8 8.5 11.5 m ohm b f=1.0mhz b v ds =20v,i d =30a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =10a 0.81 1.3 v notes a.pulse test:pulse width < 300us, duty cycle < 2%. b.guaranteed by design, not subject to production testing. c.starting t j =25 c,l=0.5mh,v dd =30v,v gs =10v.(see figure13) _ _ stb/p440s ver 1.0 www.samhop.com.tw apr,13,2009 2 i s maximum continuous drain-source diode forward current 10 a 2 nc 17 v ds =20v,i d =30a,v gs =4.5v
i d , drain c urrent(a) i d , drain c urrent (a) r ds (on) ( m ) on-r es is tance r ds (on) , normalized t j( c ) v th, normalized g ate-s ource t hres hold v oltage b v ds s , normalized drain-s ource b reakdown v oltage stb/p440s www.samhop.com.tw apr,13,2009 3 v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current (a) figure 3. on-resistance vs. drain current and gate voltage tj, junction temperature ( c ) figure 4. on-resistance variation with drain current and temperature tj, junction temperature ( c ) figure 5. gate threshold variation with temperature tj, junction temperature ( c ) figure 6. breakdown voltage variation with temperature 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v g s = 4v v g s = 3.5v v g s = 4 .5v v g s = 10 v 15 12 9 6 3 0 0 0.7 4.2 3.5 2.8 2.1 1.4 t j=125 c 25 c -55 c 24 20 16 12 8 4 1 1 20 40 60 80 100 v g s =10v v g s =4.5v 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 v g s =4.5v i d =25a v g s =10v i d =30a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v g s i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua ver 1.0
is , s ource-drain current (a) r ds (on) ( m ) 18 15 12 96 0 2 4 6 8 10 0 i d =30a 3 25 c 75 c 125 c i d , drain c urrent (a) v g s , g ate to s ource v oltage (v ) c , c apacitance (pf ) 10 15 20 25 30 1800 1500 1200 900 600 300 0 ciss coss crss s witching t ime (ns ) stb/p440s ver 1.0 www.samhop.com.tw apr,13,2009 4 v gs , gate-source voltage (v) figure 7. on-resistance vs. gate-source voltage v sd , body diode forward voltage (v) figure 8. body diode forward voltage variation with source current v ds , drain-to source voltage (v) figure 9. capacitance qg, total gate charge (nc) figure 10. gate charge rg, gate resistance ( ) figure 11. switching characteristics v ds , gate-source voltage (v) figure 12. maximum safe operating area 10 86 4 2 0 15 20 25 30 35 40 v ds =20v i d =30a 10 5 0 100 10 0.1 1 400 1 10 100 100us r d s (o n ) l im i t 1ms 1 0ms dc v g s =10v s ingle p uls e t c=25 c 1 10 100 1 10 100 300 vds=20v,id=1a vgs=10v td(on) tr td(off ) tf 6 60 10 1 60 0 0.25 0.50 1.00 0.75 1.25 125 c 25 c 75 c 0 5
t p v ( br )d ss i a s r g i a s 0.0 1 t p d .u .t l v d s + - v d d d r i v e r a 15v 20v 0.01 0.1 1 2 0.00001 0.0001 0.001 0.01 0.1 1 p dm t 1 t 2 1. r j c (t)=r (t) * 2. =s ee datas heet 3. t j m- t c = p * (t ) 4. duty c ycle, d=t1/t2 r j c r j c r j c 10 s ingle p uls e 0.02 0.05 0.1 0.2 d=0.5 0.01 stb/p440s ver 1.0 www.samhop.com.tw apr,13,2009 5 unclamped inductive test circuit unclamped inductive wave forms figure 13a. figure 13b. square wave pulse duration (msec) figure 14. normalized thermal transient impedance curve r(t),normalized effective transient thermal impedance
stb/p440s ver 1.0 www.samhop.com.tw apr,13,2009 6
stb/p440s ver 1.0 www.samhop.com.tw apr,13,2009 7
to-220/263ab tube stb/p440s ver 1.0 www.samhop.com.tw apr,13,2009 8
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