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  DZT5401 datasheet number: ds3 1218 rev. 3 - 2 1 of 7 www.diodes.com december 2017 ? diodes incorporated DZT5401 150v pnp small signal transistor in sot223 features ? bv ceo > - 15 0v ? i c = - 6 00m a high collector current ? ideal for medium power switching or amplification applications ? complementary pn p t ype : dzt 5551 ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) mechanical data ? case: sot223 ? case m aterial: m olded p lastic. green m olding c ompound. ul flammability rating 94v - 0 ? moisture sens itivity: level 1 per j - std - 020 ? terminals: finish - matte tin plated leads, solderable per mil - std - 202, method 208 ? weight: 0.112 g rams ( approximate ) applications ? amplifiers ? power supplies ordering information (note 4 ) product compliance marking reel size (inches) tape width (mm) quantity per reel DZT5401 - 13 standard k4m 13 12 2,500 note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes - packaging/ . marking information device s ymbol top view sot 223 top view pin - out k 4 m = product type marking code = manufacturers k4m y w w c e b
DZT5401 datasheet number: ds3 1218 rev. 3 - 2 2 of 7 www.diodes.com december 2017 ? diodes incorporated DZT5401 absolute maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit collector - base voltage v cbo - 16 0 v collector - emitter voltage v ceo - 15 0 v emitter - base voltage v ebo - 6 v collector current i c - 6 00 ma thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit power dissipation @t a = + 25c (note 5 ) p d 1 w thermal resistance, junction to ambient @t a = + 25c (note 5 ) r ja 125 c/w operating and storage temperature range t j, t stg - 65 to +150 c esd ratings (note 6 ) characteristic symbol value unit jedec class electrostatic discharge - human body model esd hbm 4,000 v 3a electrostatic discharge - machine model esd mm 400 v c notes: 5 . for a device mounted with the collector lead on minimum recommended pad (mrp) layout 1oz copper that is on a single - sided 1.6mm fr - 4 pcb ; device is measured under still air conditions whilst operating in a steady - state. 6 . refer to jedec specification jesd22 - a114 and jesd22 - a115.
DZT5401 datasheet number: ds3 1218 rev. 3 - 2 3 of 7 www.diodes.com december 2017 ? diodes incorporated DZT5401 thermal characteristics and derating information ( c ) 0 0.2 0.4 25 50 75 100 125 150 p , p o w e r d i s s i p a t i o n ( m w ) d t , ambient temperature ( C ) fig. 1 max power dissipation vs. ambient temperature a 0.6 0.8 1.0 0
DZT5401 datasheet number: ds3 1218 rev. 3 - 2 4 of 7 www.diodes.com december 2017 ? diodes incorporated DZT5401 e lectrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics collector - base breakdown voltage bv cbo - 16 0 c = - 100 a , i e = 0 collector - emitter breakdown voltage (note 7 ) bv c e o - 15 0 v i c = - 1m a , i b = 0 emitter - base breakdown voltage bv ebo - 6 v i e = - 10 a , i c = 0 collector - base cut - off current i cbo - 50 na a v cb = - 1 20 v , i e = 0 v cb = - 120 v , i e = 0 , t a = +150c emitter - base cut - off current i ebo - 50 na v eb = - 3 v , i c = 0 on characteristics (note 7 ) collector - emitter saturation voltage v ce( sat ) - 0.2 - 0.5 v i c = - 1 0m a, i b = - 1 m a i c = - 50m a, i b = - 5m a base - emitter saturation voltage v be( sat ) - 1 . 0 v i c = - 1 0m a, i b = - 1 m a i c = - 50m a, i b = - 5m a static forward current transfer ratio h fe 5 0 6 0 5 0 2 4 0 i c = - 1 ma, v ce = - 5 v i c = - 10 ma, v ce = - 5 v i c = - 5 0 ma, v ce = - 5 v small signal characteristics transition frequency f t 10 0 300 mhz v ce = - 10 v , i c = - 10m a, f = 100mhz output capacitance cobo 6 pf v cb = - 1 0 v , f = 1mhz , i e = 0 small signal current gain h fe 40 v ce = - 10v, i c = - 1.0ma, f = 1.0khz noise figure nf ce = - 5.0v, i c = - 200 ? s = 10 ?? f = 1.0khz note : 7 . measured under pulsed conditions. pulse width 300s. duty cycle 2%. typical electrical characteristics (@ t a = +25c, unless otherwise specified.) 0 50 100 150 200 250 0.00 0.05 0.10 0.15 0.20 0.25 0 1 2 3 4 5 6 7 8 9 10 -v , collector-emitter voltage (v) ce - i , c o l l e c t o r c u r r e n t ( a ) c fig. 2 typical collector current vs. collector-emitter voltage i = -2ma b i = -4ma b i = -6ma b i = -8ma b i = -10ma b
DZT5401 datasheet number: ds3 1218 rev. 3 - 2 5 of 7 www.diodes.com december 2017 ? diodes incorporated DZT5401 typical electrical characteristics ( cont . ) 0 20 40 60 80 100 -i , collector current (ma) c f , c u r r e n t g a i n - b a n d w i d t h p r o d u c t ( m h z ) t fig. 8 typical gain-bandwidth product vs. collector current v = -10v f = 100mhz ce 0 0.2 0.4 0.6 0.8 1 1.2 0.0001 0.001 0.01 0.1 1 -i , collector current (a) c - v , b a s e - e m i t t e r s a t u r a t i o n v o l t a g e ( v ) b e ( s a t ) fig. 6 typical base-emitter saturation voltage vs. collector current 0 10 20 30 40 50 60 70 0.01 0.1 1 10 100 v , reverse voltage (v) r fig. 7 typical capacitance characteristics c obo c ibo f = 1mhz 0 0.05 0.1 0.15 0.2 0.25 0.3 -i , collector current (a) c - v , c o l l e c t o r - e m i t t e r s a t u r a t i o n v o l t a g e ( v ) c e ( s a t ) fig. 4 typical collector-emitter saturation voltage vs. collector current 0 0.2 0.4 0.6 0.8 1 1.2 0.0001 0.001 0.01 0.1 1 -i , collector current (a) c - v , b a s e - e m i t t e r t u r n - o n v o l t a g e ( v ) b e ( o n ) fig. 5 typical base-emitter turn-on voltage vs. collector current
DZT5401 datasheet number: ds3 1218 rev. 3 - 2 6 of 7 www.diodes.com december 2017 ? diodes incorporated DZT5401 package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. sot223 suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. sot223 note: for high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and c lea rance distances between device t erminals and pcb tracking. sot223 dim min max typ a 1.55 1.65 1.60 a1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 c 0.20 0.30 0.25 d 6.45 6.55 6.50 e 3.45 3.55 3.50 e1 6.90 7.10 7.00 e - - 4.60 e1 - - 2.30 l 0.85 1.05 0.95 q 0.84 0.94 0.89 all dimensions in mm dimensions value (in mm) c 2.30 c1 6.40 x 1.20 x1 3.30 y 1.60 y1 1.60 y2 8.00 a1 a 7 7 d b e e1 b1 c e1 l 0 -10 q e 0.25 seating plane gauge plane x1 y1 y x c c1 y2
DZT5401 datasheet number: ds3 1218 rev. 3 - 2 7 of 7 www.diodes.com december 2017 ? diodes incorporated DZT5401 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products d escribed herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated doe s not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized a pplication. products described herein may be covered by one or more united states, international or foreign patents pending. product name s and markings noted herein may also be covered by one or more united states, international or foreign trademarks. th is document is written in english but may be translated into multiple languages for reference. only the english version of th is document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or s ystems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectivene ss. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related req uirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. fu rther, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 7 , diodes incorporated www.diodes.com


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Newark

Part # Manufacturer Description Price BuyNow  Qty.
DZT5401-13
28AK9014
Diodes Incorporated Trans, Pnp, 150V, 0.6A, 150Deg C, 1W Rohs Compliant: Yes |Diodes Inc. DZT5401-13 1000: USD0.173
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1: USD0.439
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820

DigiKey

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DZT5401-13
DZT5401DICT-ND
Diodes Incorporated TRANS PNP 150V 0.6A SOT223-3 62500: USD0.1125
25000: USD0.11544
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16553

Avnet Americas

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DZT5401-13
DZT5401-13
Diodes Incorporated Trans GP BJT PNP 150V 0.6A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: DZT5401-13) 250000: USD0.08928
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Mouser Electronics

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DZT5401-13
621-DZT5401-13
Diodes Incorporated Bipolar Transistors - BJT 1000mW -150Vceo 1: USD0.4
10: USD0.333
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Arrow Electronics

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DZT5401-13
V72:2272_06698399
Diodes Incorporated Trans GP BJT PNP 150V 0.6A 1000mW 4-Pin(3+Tab) SOT-223 T/R 500: USD0.1361
441: USD0.2269
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RS

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DZT5401-13
70550447
Diodes Incorporated TRANS PNP 150V 0.6A SOT-223 | Diodes Inc DZT5401-13 50: USD0.245
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Verical

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DZT5401-13
82097515
Zetex / Diodes Inc Trans GP BJT PNP 150V 0.6A 1000mW 4-Pin(3+Tab) SOT-223 T/R 2500: USD0.1125
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DZT5401-13
65030525
Zetex / Diodes Inc Trans GP BJT PNP 150V 0.6A 1000mW 4-Pin(3+Tab) SOT-223 T/R 440: USD0.2269
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Bristol Electronics

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DZT5401-13
Diodes Incorporated 26: USD0.3
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Quest Components

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DZT5401-13
Diodes Incorporated SMALL SIGNAL BIPOLAR TRANSISTOR, 0.6A I(C), 150V V(BR)CEO, 1-ELEMENT, PNP, SILICON 26: USD0.24
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Rutronik

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DZT5401-13
TDSTD8240
Diodes Incorporated PNP TRANSISTOR 150V 0,6A SOT223 2500: USD0.154
5000: USD0.1474
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Avnet Silica

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DZT5401-13
DZT5401-13
Diodes Incorporated Trans GP BJT PNP 150V 0.6A 4-Pin(3+Tab) SOT-223 T/R (Alt: DZT5401-13) BuyNow
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CHIPMALL.COM LIMITED

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DZT5401-13
Diodes Incorporated TRANS PNP 150V 0.6A SOT223-3 10: USD0.23785
100: USD0.19502
500: USD0.15366
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