j. cx t/ 20 stern ave, springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 uhf power mos transistor BLF521 features ? high power gain ? easy power control ? gold metallization ? good thermal stability ? withstands full load mismatch ? designed for broadband operation. description silicon n-channel enhancement mode vertical d-mos transistor designed for communications transmitter applications in the uhf frequency range. the transistor is encapsulated in a 4-lead, sot172d studless package, with a ceramic cap. all leads are isolated from the mounting base. pin configuration top view fig.1 simplified outline and symbol. caution this product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handlina. pinning-sot172d pin 1 2 3 4 description source gate drain source warning product and environmental safety - toxic materials this product contains beryllium oxide. the product is entirely safe provided that the beo disc is not damaged. all persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. after use, dispose of as chemical or special waste according to the regulations applying at the location of the user. it must never be thrown out with the general or domestic waste. quick reference data rf performance at tamb = 25 c in a common source test circuit. mode of operation cw, class-b f (mhz) 500 vds (v) 12.5 pl (w) 2 gp (db) >10 tld (%) >50 vi seini-c ondihilors reserves the right in change test conditions, parameter limit!) ;md package jimensions without notice inlbrmation liirrmrntd by nj scmi-cumluclon h believed to he both accurate and reliable ;?t the lime of going lo press. however \ semi ?( i inductors .bsimics no rcvptmsibility tor ;lny errors or omissions discovered in its use nj seim-c nnjin.li rs cncounses ui'.ti iiiers (n vciifv ih 11 diitnshvels ;ire?. urrent before plncing urden
uhf power mos transistor BLF521 limiting values in accordance with the absolute maximum system (iec 60134). symbol vds vgs id p.o. tstg tj parameter drain-source voltage gate-source voltage drain current (dc) total power dissipation storage temperature junction temperature conditions tmb < 25 c min. - - - - -65 - max. 40 20 1 10 150 200 unit v v a w c c thermal characteristics symbol rth j-mb rth j-a parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient; notel value 17.5 75 unit k/w k/w characteristics tj = 25 c unless otherwise specified. symbol v(br)dss bss less vcsth 9fe roson bsx cis cos crs parameter drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance conditions vgs = 0; id = 3 ma vgs = 0; vds = 12.5v vgs = 20 v; vds = 0 ld = 3ma;vds=10v id = 0.3 a; vds = 10v id = 0.3 a; vgs = 15v vgs = 15v; vds = 10v vg5 = 0; vds = 12.5 v;f=1 mhz ves = 0;vds = 12.5v;f=1 mhz vgs = 0;vds = 12.5v;f=1 mhz min. 40 - - 2 80 - - - - - typ. - - - - 135 3.5 1.3 5.3 7.8 1.8 max. - 10 1 4.5 - 4 - - - - unit v ma ha v ms a a pf pf pf vgs group indicator group a b c d e f g h j k l m n limits (v) min. 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 max. 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 group o p q r s t u v w x y z limits (v) min. 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 max. 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5
jt + 9 t "cp 10 mm dimensions (millimetre dimensions are derived from the original inch dimensions) unit mm inches a 3.71 2.89 0.146 0.114 b 331 3.04 0,13 0.12 h 0.89 0.63 0.035 0.025 c 0.16 0.10 0.006 0.004 d 5.20 4.95 0.205 0.195 1 s.33 5.08 0.210 0.200 h 26.17 24.63 1.03 0.97 q 1.15 0.88 0.045 0.035 outline version sot172d references iec jedec eiaj
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