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www.irf.com 1 03/12/02 irlr8203irlu8203 smps mosfet hexfet ? power mosfet v dss r ds(on) max i d 30v 6.8m 110a notes through are on page 10 d-pak i-pak irlr8203 irlu8203 absolute maximum ratings symbol parameter max. units v ds drain-source voltage 30 v v gs gate-to-source voltage 20 v i d @ t c = 25 c continuous drain current, v gs @ 10v 110 i d @ t c = 100 c continuous drain current, v gs @ 10v 76 a i dm pulsed drain current 120 p d @t c = 25 c maximum power dissipation 140 w p d @t c = 100 c maximum power dissipation 69 w linear derating factor 0. 92 w/ c t j , t stg junction and storage temperature range -55 to + 175 c parameter typ. max. units r jc junction-to-case CCC 1.09 r ja junction-to-ambient (pcb mount)* CCC 50 c/w r ja junction-to-ambient CCC 110 thermal resistance * when mounted on 1" square pcb (fr-4 or g-10 material) . for recommended footprint and soldering techniques refer to application note #an-994 applications benefits ultra-low gate impedance very low rds(on) at 4.5v v gs fully characterized avalanche voltage and current high frequency isolated dc-dc converters with synchronous rectification for telecom and industrial use high frequency buck converters for computer processor power pd - 94404 downloaded from: http:///
irlr/u8203 2 www.irf.com symbol parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) CCC CCC p-n junction diode. CCC 0.75 1.3 v t j = 25 c, i s = 12a, v gs = 0v CCC 0.65 CCC t j = 125 c, i s = 12a, v gs = 0v t rr reverse recovery time CCC 48 72 ns t j = 25 c, i f = 12a, v r =15v q rr reverse recovery charge CCC 62 92 nc di/dt = 100a/s t rr reverse recovery time CCC 49 74 ns t j = 125 c, i f = 12a, v r =15v q rr reverse recovery charge CCC 67 100 nc di/dt = 100a/s dynamic @ t j = 25c (unless otherwise specified) ns symbol parameter typ. max. units e as single pulse avalanche energy CCC 310 mj i ar avalanche current CCC 30 a avalanche characteristics s d g diode characteristics 110 120 a symbol parameter min. typ. max. units conditions g fs forward transconductance 35 CCC CCC sv ds = 15v, i d = 12a q g total gate charge CCC 33 50 i d = 12a q gs gate-to-source charge CCC 5.7 8.5 nc v ds = 24v q gd gate-to-drain ("miller") charge CCC 17 25 v gs = 4.5v q oss output gate charge CCC 23 34 v gs = 0v, v ds = 10v t d(on) turn-on delay time CCC 15 CCC v dd = 15v t r rise time CCC 99 CCC i d = 12a t d(off) turn-off delay time CCC 30 CCC r g = 6.8 t f fall time CCC 69 CCC v gs = 4.5v c iss input capacitance CCC 2430 CCC v gs = 0v c oss output capacitance CCC 1200 CCC v ds = 15v c rss reverse transfer capacitance CCC 250 CCC pf ? = 1.0mhz v sd diode forward voltage static @ t j = 25 c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 30 CCC CCC vv gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.027 CCC v/ c reference to 25 c, i d = 1ma CCC 5.6 6.8 v gs = 10v, i d = 15a CCC 7.1 9.0 v gs = 4.5v, i d = 12a v gs(th) gate threshold voltage 1.0 CCC 3.0 v v ds = v gs , i d = 250a CCC CCC 20 a v ds = 24v, v gs = 0v CCC CCC 100 v ds = 24v, v gs = 0v, t j = 125 c gate-to-source forward leakage CCC CCC 200 v gs = 20v gate-to-source reverse leakage CCC CCC -200 na v gs = -20v i gss i dss drain-to-source leakage current r ds(on) static drain-to-source on-resistance m downloaded from: http:///
irlr/u8203 www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , drain-to-source current (a) 2.5v 20s pulse width tj = 25 c vgs top 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v bottom 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , drain-to-source current (a) 2.5v 20s pulse width tj = 175 c vgs top 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v bottom 2.5v 2.0 3.0 4.0 5.0 v gs , gate-to-source voltage (v) 10.00 100.00 1000.00 i d , drain-to-source current ( ) t j = 25 c t j = 175 c v ds = 15v 20s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c ) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 30a downloaded from: http:///
irlr/u8203 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.1 1 10 100 1000 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 175 c j t = 25 c j 0 10 20 30 40 0 1 2 3 4 5 6 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 12a v = 6v ds v = 15v ds v = 24v ds 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 1 10 100 1000 v ds , drain-tosource voltage (v) 1 10 100 1000 i d , drain-to-source current (a) tc = 25 c tj = 175 c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec downloaded from: http:///
irlr/u8203 www.irf.com 5 fig 10a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 4.5v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 175 0 20 40 60 80 100 120 t , case temperature ( c) i , drain current (a) c d limited by package 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:///
irlr/u8203 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 4.5 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 200 400 600 800 starting tj, junction temperature ( c) e , single pulse avalanche energy (mj) as i d top bottom 12a 21a 30a downloaded from: http:///
irlr/u8203 www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet ? power mosfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit r g v dd ? dv/dt controlled by r g ? driver same type as d.u.t. ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer * downloaded from: http:///
irlr/u8203 8 www.irf.com d-pak (to-252aa) package outline dimensions are shown in millimeters (inches) d-pak (to-252aa) part marking information 6.73 (.265) 6.35 (.250) - a - 4 1 2 3 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 4.57 (.180) 2.28 (.090) 2x 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 0.51 (.020) m in . 0.58 (.023) 0.46 (.018) lead assignments 1 - g a t e 2 - d r a in 3 - s o u r c e 4 - d r a in 10.42 (.410) 9.40 (.370) notes: 1 d imension ing & tolerancin g per ansi y 14.5m, 1982. 2 controlling dimension : inch. 3 c o n f o r m s t o je d e c o u t lin e t o -252 a a . 4 dimensions show n are before solder dip, sold er d ip max. +0.16 (.006). irf u120 916a lot code assembly example: with assembly this is an irfr120 year 9 = 1999 dat e code line a we e k 16 in the assembly line "a" as s embled on ww 16, 1999 lot code 1234 part number international logo rectifier 34 12 downloaded from: http:///
irlr/u8203 www.irf.com 9 i-pak (to-251aa) package outline dimensions are shown in millimeters (inches) i-pak (to-251aa) part marking information 6.73 (.265) 6.35 (.250) - a - 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010 ) m a m b 2.28 (.090) 1.14 (.045) 0.76 (.030) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) lead assignments 1 - g a t e 2 - d r a in 3 - source 4 - d r a in notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 c o n f o r ms to je d e c o u t lin e to -25 2a a . 4 d im e n s io n s s h o w n a r e b e f o r e s o l d e r d ip , solder dip max. +0.16 (.006). 9.65 (.380) 8.89 (.350) 2x 3x 2.28 (.090) 1.91 (.075) 1.52 (.060) 1.15 (.045) 4 1 2 3 6.45 (.245) 5.68 (.224) 0.58 (.023) 0.46 (.018) we e k 19 line a ye ar 9 = 1999 dat e code part number in the assembly line "a" as s embled on ww 19, 1999 lot code 5678 rectifier logo international assembly lot code 56 78 example: wi t h as s e mb l y t his is an irfr120 irf u120 919a downloaded from: http:///
irlr/u8203 10 www.irf.com repetitive rating; pulse width limited by max. junction temperature. notes: starting t j = 25 c, l = 0.68mh r g = 25 , i as = 30a. pulse width 400s; duty cycle 2%. calculated continuous current based on maximum allowable junction temperature. package limitation current is 30a. tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 m m 13 inch d-pak (to-252aa) tape & reel information dimensions are shown in millimeters (inches) data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 03/02 downloaded from: http:///
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ downloaded from: http:///

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