2003. 10. 29 1/2 semiconductor technical data KDV355E revision no : 0 vco for uhf/vhf band. features high capacitance ratio : c 1v /c 4v =2.2(min.) low series resistance : r s =0.6 (max.) small package : esc. maximum rating (ta=25 ) esc dim millimeters a b c d e 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 cathode mark d c b a 1 2 e 1. anode 2. cathode f 0.13 0.05 f + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ) variable capacitance diode silicon epitaxial planar diode type name marking a v characteristic symbol rating unit reverse voltage v r 15 v junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit reverse current i r1 v r =15v - - 10 na i r2 v r =15v, ta=60 - - 100 capacitance c 1v v r =1v, f=1mhz 6.40 - 7.20 pf c 4v v r =4v, f=1mhz 2.55 - 2.95 capacitance ratio c 1v /c 4v - 2.2 - - series resistance r s v r =1v, f=470mhz - - 0.6
2003. 10. 29 2/2 revision no : 0 KDV355E 10 reverse current i (a) r t 0 reverse voltage v (v) r i - v rr 4 8 12 16 total capacitance c (pf) 0 1.0 10 reverse voltage v (v) r tr c - v 10 2 4 6 8 f=1mhz 10 -1 -1.5 1.0 10 reverse voltage v (v) r tr r ? (log c ) / ? (log v ) - v tr ? (log c ) / ? (log v ) 10 -1.0 -0.5 0 -1 s series resistance r ( ? ) 0 1.0 10 reverse voltage v (v) r sr r - v 10 0.5 f=470mhz 0.6 0.3 0.4 0.1 0.2 -1 -11 10 -12 10 -9 10 -10
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