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? IRGP4790PBF irgp4790-epbf base part number package type standard pack orderable part number form quantity IRGP4790PBF to-247ac tube 25 IRGP4790PBF irgp4790-epbf to-247ad tube 25 irgp4790-epbf absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 650 v i c @ t c = 25c continuous collector current 140 a ? i c @ t c = 100c continuous collector current 90 i cm pulse collector current, v ge =15v 225 i lm clamped inductive load current, v ge =20v ? 300 v ge continuous gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 455 w p d @ t c = 100c maximum power dissipation 230 t j operating junction and -40 to +175 c t stg storage temperature range soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r ? jc thermal resistance junction-to-case ? ??? ??? 0.33 c/w r ? cs thermal resistance, case-to-sink (flat, greased surface) ??? 0.24 ??? r ? ja thermal resistance, junction-to-ambient (typical socket mount) ??? 40 ??? v ces = 650v i c = 90a, t c =100c t sc ?? 5.5s, t j(max) = 175c v ce(on) typ. = 1.7v @ i c = 75a applications ?? industrial motor drive ?? ups ?? solar inverters ?? welding g c e gate collector emitter ? insulated gate bipolar transistor ? IRGP4790PBF ? to \ 247ac ? irgp4790 \ epbf ? to \ 247ad ? 1 www.irf.com ? 2014 international rectifier submit datasheet feedback august 22, 2014 features benefits low v ce(on) and switching losses high efficiency in a wide range of applications 5.5s short circuit soa square rbsoa maximum junction temperature 175c increased reliability positive v ce (on) temperature coefficient excellent current sharing in parallel operation rugged transient performance lead-free, rohs compliant environmentally friendly g e c g c e e c g n-channel ?
? IRGP4790PBF/irgp4790-epbf 2 www.irf.com ? 2014 international rectifier submit datasheet feedback august 22, 2014 electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 650 ? ? v v ge = 0v, i c = 100a ? ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 0.65 ? v/c v ge = 0v, i c = 5.0ma (25c-175c) v ce(on) collector-to-emitter saturation voltage ? 1.7 2.0 v i c = 75a, v ge = 15v, t j = 25c ? 2.1 ? i c = 75a, v ge = 15v, t j = 175c v ge(th) gate threshold voltage 5.5 ? 7.4 v v ce = v ge , i c = 2.1ma ? v ge(th) / ? t j threshold voltage te mperature coeff. ? -20 ? mv/c v ce = v ge , i c = 2.1ma (25c-150c) gfe forward transconductance ? 47 ? s v ce = 50v, i c = 75a, pw = 20s i ces collector-to-emitter leakage current ? 1.0 25 a v ge = 0v, v ce = 650v ? 1.0 ? ma v ge = 0v, v ce = 650v, t j = 175c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max ? units conditions q g total gate charge (turn-on) ? 140 210 nc i c = 75a q ge gate-to-emitter charge (turn-on) ? 50 80 v ge = 15v q gc gate-to-collector charge (turn-on) ? 60 90 v cc = 400v e on turn-on switching loss ? 2.5 3.4 mj ? i c = 75a, v cc = 400v, v ge =15v r g = 10 ? , l = 200h, t j = 25c energy losses include tail & diode reverse recovery ?? e off turn-off switching loss ? 2.2 3.0 e total total switching loss ? 4.7 6.4 t d(on) turn-on delay time ? 50 70 ns ? t r rise time ? 70 90 t d(off) turn-off delay time ? 200 225 t f fall time ? 60 80 e on turn-on switching loss ? 3.9 ? mj ? i c = 75a, v cc = 400v, v ge =15v r g = 10 ? , l = 200h, t j = 175c energy losses include tail & diode reverse recovery ?? ? e off turn-off switching loss ? 2.8 ? e total total switching loss ? 6.7 ? t d(on) turn-on delay time ? 50 ? ns t r rise time ? 70 ? t d(off) turn-off delay time ? 240 ? t f fall time ? 70 ? c ies input capacitance ? 4300 ? v ge = 0v c oes output capacitance ? 230 ? pf v cc = 30v c res reverse transfer capacitance ? 120 ? f = 1.0mhz rbsoa reverse bias safe operating area t j = 175c, i c = 300a full square v cc = 520v, vp 650v v ge = +20v to 0v scsoa ? short circuit safe operating area ? 5.5 ? ? ? ? ? s ? t j = 150c,v cc = 400v, vp 650v v ge = +15v to 0v notes: ? v cc = 80% (v ces ), v ge = 20v. ? r ? is measured at t j of approximately 90c. ? refer to an-1086 for guidelines for measuring v (br)ces safely. ? maximum limits are based on statistical sample size characterization. ? pulse width limited by max. junction temperature. ? values influenced by parasitic l and c in measurement .
? IRGP4790PBF/irgp4790-epbf 3 www.irf.com ? 2014 international rectifier submit datasheet feedback august 22, 2014 10 100 1000 v ce (v) 1 10 100 1000 i c ( a ) fig. 5 - reverse bias soa t j = 175c; v ge = 20v fig. 4 - forward soa t c = 25c; t j 175c; v ge = 15v 0.1 1 10 100 f , frequency ( khz ) 20 40 60 80 100 120 140 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 175c tcase = 100c gate drive as specified power dissipation = 208.3w fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) i square wave: v cc diode as specified 1 10 100 1000 10000 v ce (v) 0.1 1 10 100 1000 i c ( a ) 10sec 100sec tc = 25c tj = 175c single pulse dc 1msec 25 50 75 100 125 150 175 t c (c) 0 20 40 60 80 100 120 140 160 i c ( a ) fig. 2 - maximum dc collector current vs. case temperature 25 50 75 100 125 150 175 t c (c) 0 100 200 300 400 500 p t o t ( w ) fig. 3 - power dissipation vs. case temperature
? IRGP4790PBF/irgp4790-epbf 4 www.irf.com ? 2014 international rectifier submit datasheet feedback august 22, 2014 51 01 52 0 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 38a i ce = 75a i ce = 150a 51 01 52 0 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 38a i ce = 75a i ce = 150a 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 250 300 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v fig. 8 - typ. igbt output characteristics t j = 175c; tp = 20s fig. 10 - typical v ce vs. v ge t j = 25c fig. 7 - typ. igbt output characteristics t j = 25c; tp = 20s 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 250 300 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v fig. 6 - typ. igbt output characteristics t j = -40c; tp = 20s 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 250 300 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 51 01 52 0 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 38a i ce = 75a i ce = 150a fig. 9 - typical v ce vs. v ge t j = -40c fig. 11 - typical v ce vs. v ge t j = 175c
? IRGP4790PBF/irgp4790-epbf 5 www.irf.com ? 2014 international rectifier submit datasheet feedback august 22, 2014 0 50 100 150 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 20 40 60 80 100 120 r g ( ? ) 10 100 1000 10000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 14 - typ. switching time vs. i c t j = 175c; l = 200h; v ce = 400v, r g = 10 ? ; v ge = 15v fig. 15 - typ. energy loss vs. r g t j = 175c; l = 200h; v ce = 400v, i ce = 75a; v ge = 15v 0 25 50 75 100 rg ( ? ) 2 3 4 5 6 7 8 9 10 11 e n e r g y ( m j ) e off e on fig. 16 - typ. switching time vs. r g t j = 175c; l = 200h; v ce = 400v, i ce = 75a; v ge = 15v 2 4 6 8 10 12 14 16 v ge (v) 0 45 90 135 180 225 i c e ( a ) t j = 25c t j = 175c fig. 12 - typ. transfer characteristics v ce = 50v; tp = 20s 0 25 50 75 100 125 150 i c (a) 0 2 4 6 8 10 12 e n e r g y ( m j ) e off e on fig. 13 - typ. energy loss vs. i c t j = 175c; l = 200h; v ce = 400v, r g = 10 ? ; v ge = 15v 8 1012141618 v ge (v) 4 8 12 16 20 24 t i m e ( s ) 50 120 190 260 330 400 c u r r e n t ( a ) t sc i sc fig. 17 - v ge vs. short circuit time v cc = 400v; t c = 150c
? IRGP4790PBF/irgp4790-epbf 6 www.irf.com ? 2014 international rectifier submit datasheet feedback august 22, 2014 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig. 20 - maximum transient thermal impedance, junction-to-case fig. 27 - maximum transient thermal impedance, junction-to-case (diode) ri (c/w) ? i (sec) ? 0.0125052 0.000036 0.0722526 0.000151 0.1389474 0.005683 0.1056000 0.029339 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 0 100 200 300 400 500 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres fig. 18 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 0 20 40 60 80 100 120 140 160 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 400v v ces = 300v fig. 19 - typical gate charge vs. v ge i ce = 75a
? IRGP4790PBF/irgp4790-epbf 7 www.irf.com ? 2014 international rectifier submit datasheet feedback august 22, 2014 fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.3 - s.c. soa circuit fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit fig.c.t.6 - bvces filter circuit 0 1k vcc dut l l rg 80 v dut vcc + - dc 4x dut vcc l rg vcc dut / driver diode clamp / dut dc 4x dut vcc g force c sense 100k dut 0.0075f d1 22k e force c force e sense
? IRGP4790PBF/irgp4790-epbf 8 www.irf.com ? 2014 international rectifier submit datasheet feedback august 22, 2014 fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 fig. wf3 - typ. s.c. waveform @ t j = 150c using fig. ct.3 -20 0 20 40 60 80 100 120 -100 0 100 200 300 400 500 600 -0.5 0 0.5 1 i ce (a) v ce (v) time(s) 90% i ce 10% v ce 10% i ce eoff loss tf -20 0 20 40 60 80 100 120 -100 0 100 200 300 400 500 600 -0.5 0 0.5 i ce (a) v ce (v) time (s) test current 90% i ce 10% v ce 10% i ce tr eon loss -100 0 100 200 300 400 500 600 -100 0 100 200 300 400 500 600 -5 0 5 10 ice (a) vce (v) time (s) vce ice
? IRGP4790PBF/irgp4790-epbf 9 www.irf.com ? 2014 international rectifier submit datasheet feedback august 22, 2014 to-247ac package outline dimensions are shown in millimeters (inches) year 1 = 2001 date code part number international logo rectifier assembly 56 57 irfpe30 135h line h indicates "lead-free" week 35 lot code in the assembly line "h" assembled on ww 35, 2001 notes: this part marking information applies to devices produced after 02/26/2001 note: "p" in assembly line position example: with assembly this is an irfpe30 lot code 5657 to-247ac part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ac package is not recommended for surface mount application.
? IRGP4790PBF/irgp4790-epbf 10 www.irf.com ? 2014 international rectifier submit datasheet feedback august 22, 2014 to-247ad package outline (dimensions are shown in millimeters (inches)) to-247ad part marking information assem bly year 0 = 2000 assem bled o n w w 35, 2000 in the assem bly line "h" exam ple: this is an irg p30b120kd-e lo t co de 5657 with assembly part number date code in t e r n a t io n a l rectifier lo g o 035h 5 6 5 7 week 35 lin e h lot code n o te : "p " in a s s e m b ly lin e p o s itio n indicates "lead-free" note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ad package is not recommended for surface mount application.
? IRGP4790PBF/irgp4790-epbf 11 www.irf.com ? 2014 international rectifier submit datasheet feedback august 22, 2014 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ qualification information ? qualification level industrial (per jedec jesd47f) ?? moisture sensitivity level to-247ac n/a rohs compliant yes to-247ad n/a ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. revision history date comments ? updated temperature coeff. of breakdown volt age from ?0.11v/c? to ?0.65 v/c? on page 2 . ?? updated i c vs. t c graph fig.2 to match page1 spec data on page 3. 8/22/2014

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