v rrm = 50 v - 200 v i f(av) = 100 a features ? high surge capability d-67 package ? types from 50 v to 200 v v rrm ? not esd sensitive parameter symbol MURH10005(r) murh10010(r) unit repetitive peak reverse voltage v rrm 50 100 v rms reverse voltage v rms 35 70 v MURH10005 thru murh10020r maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) conditions murh10020(r) 200 140 silicon super fast recover y diode dc blocking voltage v dc 50 100 v operating temperature t j -55 to 150 -55 to 150 c storage temperature t stg -55 to 150 -55 to 150 c parameter symbol MURH10005(r) murh10010(r) unit average forward current (per pkg) i f(av) 100 100 a peak forward surge current i fsm 2000 2000 a maximum instantaneous forward voltage 1.0 1.0 25 25 a 33 ma maximum reverse recovery time t rr 75 75 ns thermal characteristics maximum thermal resistance, junction - case r jc 0.45 0.45 c/w -55 to 150 electrical characteristics, at tj = 25 c, unless otherwise specified conditions t c = 140 c 100 t p = 8.3 ms, half sine 2000 v f v maximum reverse current at rated dc blocking voltage i r 25 i f =0.5 a, i r =1.0 a, i rr = 0.25 a 0.45 75 t j = 125 c i fm = 100 a, t j = 25 c 200 -55 to 150 1.0 murh10020(r) 3 t j = 25 c www.genesicsemi.com/s ilicon-products/super-fast-recovery-rectifiers/ 1
MURH10005 thru murh10020r www.genesicsemi.com/s ilicon-products/super-fast-recovery-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. MURH10005 thru murh10020r www.genesicsemi.com/s ilicon-products/super-fast-recovery-rectifiers/ 3
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