elektronische bauelemente SMS8820 7a , 20v , r ds(on) 21 m ? n-ch enhancement mode power mosfet 25-nov-2015 rev.a page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free description SMS8820 uses advanced trench technology to provide excellent rds(on) and low gate charge. it is esd-pr otected. this device is suitable for the use as a uni-direct ional or bi-directional load switch, facilitated by its comm on-drain configuration. features lower gate charge simple drive requirement fast switching characteristic marking package information package mpq leader size sot-23 3k 7 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 20 v gate-source voltage v gs 12 v continuous drain current i d 7 a pulsed drain current 1 i dm 25 a thermal resistance from junction to ambient r ja 417 c / w junction and storage temperature range t j , t stg 150, -55~150 c lead temperature for soldering purposes@1/8 from case for 10s t l 260 c notes: 1. repetitive rating pulse width limited by the junction temperature. sot-23 8820 top view a l c b d g h j f k e 1 2 3 1 2 3 millimeter millimeter ref. min. max. ref. min. max. a 2.70 3.10 g 0.09 0.18 b 2.10 2.65 h 0.35 0.65 c 1.20 1.40 j 0.08 0.20 d 0.89 1.17 k 0.6 ref. e 1.78 2.04 l 0.95 bsc. f 0.30 0.50
elektronische bauelemente SMS8820 7a , 20v , r ds(on) 21 m ? n-ch enhancement mode power mosfet 25-nov-2015 rev.a page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition static drain-source breakdown voltage bv dss 20 - - v v gs =0, i d =250 a drain-source leakage current i dss - - 1 a v ds =16v, v gs =0 gate-source leakage current i gss - - 10 a v ds =0, v gs = 10v gate-threshold voltage 1 v gs(th) 0.5 - 1.1 v v ds =v gs , i d =250 a - - 21 v gs =10v, i d =7a - - 24 v gs =4.5v, i d =6.6a - - 28 v gs =3.8v, i d =6a - - 32 v gs =2.5v, i d =5.5a static drain-source on-resistance 1 r ds(on) - - 50 m v gs =1.8v, i d =2a forward transconductance 1 g fs 9 - - s v ds =5v, i d =7a diode forward voltage 1 v sd - - 1 v i s =1a, v gs =0 dynamic parameters 2 input capacitance c iss - 650 - output capacitance c oss - 140 - reverse transfer capacitance c rss - 60 - pf v gs =0 v ds =10v f=1mhz total gate charge q g - 8 - gate-source charge q gs - 2.5 - gate-drain charge q gd - 3 - nc v gs =4.5v v ds =10v i d =6a switching parameters 2 turn-on delay time t d(on) - 0.5 - rise time t r - 1 - turn-off delay time t d(off) - 12 - fall time t f - 4 - ns v dd =10v v gs =5v r gen =3 r l =1.5 notes: 1. pulse test : pulse width 300s, duty cycle 0.5%. 2. guaranteed by design, not subject to production testing.
elektronische bauelemente SMS8820 7a , 20v , r ds(on) 21 m ? n-ch enhancement mode power mosfet 25-nov-2015 rev.a page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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