2011. 5. 25 1/2 semiconductor technical data PXTA44 epitaxial planar npn transistor revision no : 0 high voltage application. features h high breakdown voltage. maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) *pulse test : pulse width " 300 s, duty cycle " 2.0% * : mounted on ceramic substrate(250 [ ? 0.8t) characteristic symbol rating unit collector-base voltage v cbo 500 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 6 v collector current i c 300 ma collector power dissipation p c 500 mw p c * 1 w junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit collector-base breakdown voltage v (br)cbo i c =100 a, i e =0 500 - - v collector-emitter breakdown voltage (1) v (br)ceo i c =1ma, i b =0 400 - - v collector-emitter breakdown voltage (2) v (br)ces i c =100 a, i b =0 400 - - v emitter-base breakdown voltage v (br)ebo i e =10 a, i c =0 6.0 - - v collector cut off current (1) i cbo v cb =400v, i e =0 - - 100 na collector cut off current (2) i ces v ce =400v, i b =0 - - 500 na emitter cutoff current i ebo v eb =4v, i c =0 - - 100 na dc current gain * h fe v ce =10v, i c =1ma 40 - - v ce =10v, i c =10ma 50 - 200 v ce =10v, i c =50ma 45 - - v ce =10v, i c =100ma 40 - - collector-emitter saturation voltage * v ce(sat) i c =10ma, i b =1ma - - 0.5 v base-emitter saturation voltage * v be(sat) i c =10ma, i b =1ma - - 0.75 v
2011. 5. 25 2/2 PXTA44 revision no : 0
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