2014. 3. 31 1/6 semiconductor technical data kml0d6np20ea n and p-ch trench mosfet revision no : 4 general description it s mainly suitable for load switching cell phones, battery powered systems and level-shifter. features h n-channel : v dss =20v, i d =600ma (r ds(on) =0.70 ? @ v gs =4.5v). : v dss =20v, i d =500ma (r ds(on) =0.85 ? @ v gs =2.5v). : v dss =20v, i d =350ma (r ds(on) =1.25 ? @ v gs =1.8v). h p-channel : v dss =-20v, i d =-400ma (r ds(on) =1.2 ? @ v gs =-4.5v). : v dss =-20v, i d =-300ma (r ds(on) =1.6 ? @ v gs =-2.5v). : v dss =-20v, i d =-150ma (r ds(on) =2.7 ? @ v gs =-1.8v). maximum rating (ta=25 ? ? ) note 1) *surface mounted on fr4 board, t ? 5sec characteristic symbol n-ch p-ch unit drain-source voltage v dss 20 -20 v gate-source voltage v gss ? 6 ? 6 v drain current dc @t a =25 ? i d * 515 -390 ma dc @t a =85 ? 370 -280 pulsed i dp 650 -650 source-drain diode current i s 450 -450 drain power dissipation p d * 280 280 mw maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal resistance, junction to ambient r thja * 446 ? /w
2014. 3. 31 2/6 kml0d6np20ea revision no : 4 electrical characteristics (ta=25 ? ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v n-ch 20 - - v i d =-250 a, v gs =0v p-ch -20 - - drain cut-off current i dss v gs =0v, v ds =16v n-ch - 0.3 100 na v gs =0v, v ds =-16v p-ch - -0.3 -100 gate leakage current i gss v gs = ? 4.5v, v ds =0v n-ch - ? 0.5 ? 1.0 a p-ch - ? 1.0 ? 2.0 gate threshold voltage v th v ds =v gs, i d =250 a n-ch 0.45 - 1.0 v v ds =v gs, i d =-250 a p-ch -0.45 - -1.0 drain-source on resistance r ds(on) * v gs =4.5v, i d =600ma n-ch - 0.41 0.70 ? v gs =-4.5v, i d =-350ma p-ch - 0.80 1.20 v gs =2.5v, i d =500ma n-ch - 0.53 0.85 v gs =-2.5v, i d =-300ma p-ch - 1.20 1.60 v gs =1.8v, i d =350ma n-ch - 0.70 1.25 v gs =-1.8v, i d =-150ma p-ch - 1.80 2.70 on state drain current i d(on) * v gs =4.5v, v ds =5v n-ch 700 - - ma v gs =-4.5v, v ds =-5v p-ch -700 - - forward transconductance g fs * v ds =10v, i d =400ma n-ch - 1.0 - s v ds =-10v, i d =-250ma p-ch - 0.4 - source-drain diode forward voltage v sd * i s =150ma, v gs =0v n-ch - 0.8 1.2 v i s =-150ma, v gs =0v p-ch - -0.8 -1.2 dynamic total gate charge q g * n-ch : v ds =10v, i d =250ma, v gs =4.5v p-ch : v ds =-10v, i d =-250ma, v gs =-4.5v n-ch - 750 - pc p-ch - 1500 - gate-source charge q gs * n-ch - 75 - p-ch - 150 - gate-drain charge q gd * n-ch - 225 - p-ch - 450 - turn-on delay time t d(on) * n-ch : v dd =10v, i d =200ma, v gs =4.5v, r g =10 ? p-ch : v dd =-10v, v gs =-4.5v, i d =-200ma, r g =10 ? n-ch - 5 - ns p-ch - 5 - turn-off delay time t d(off) * n-ch - 25 - p-ch - 35 - note 2) *pulse test : pulse width ? 300 k , duty cycle ? 2%.
2014. 3. 31 3/6 kml0d6np20ea revision no : 4
2014. 3. 31 4/6 kml0d6np20ea revision no : 4
2014. 3. 31 5/6 kml0d6np20ea revision no : 4
2014. 3. 31 6/6 kml0d6np20ea revision no : 4
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