? 2010 ixys corporation, all rights reserved ds100272a(12/10) v dss = 1000v i d25 = 0.5a r ds(on) 30 n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c, r gs = 1m 1000 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 0.5 a i dm t c = 25 c, pulse width limited by t jm 1.25 a i a t c = 25 c 0.5 a e as t c = 25 c50mj dv/dt i s i dm , v dd v dss ,t j 150 c 10 v/ns p d t c = 25 c50w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g ixta05n100p IXTP05N100P symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 1000 v v gs(th) v ds = v gs , i d = 50 a 2.0 4.0 v i gss v gs = 20v, v ds = 0v 50 na i dss v ds = v dss , v gs = 0v 10 a t j = 125 c 750 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 24 30 polar tm power mosfet features z international standard packages z avalanche rated z fast intrinsic diode z dynamic dv/dt rated z low package inductance advantages z high power density z easy to mount z space savings applications z switch-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor drives z robotics and servo controls g = gate d = drain s = source tab = drain to-263 aa (ixta) g d s to-220ab (ixtp) d (tab) g s d (tab) preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. ixta05n100p IXTP05N100P symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 30v, i d = 0.5 ? i d25 , note 1 0.24 0.40 s c iss 196 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 15 pf c rss 4 pf t d(on) 6 ns t r 15 ns t d(off) 20 ns t f 15 ns q g(on) 8.1 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 0.7 nc q gd 4.2 nc r thjc 2.5 c /w r thcs to-220 0.50 c /w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 0.5 a i sm repetitive, pulse width limited by t jm 2.0 a v sd i f = i s , v gs = 0v, note 1 1.2 v t rr 750 ns ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. i f = 0.5a, -di/dt = 100a/ s v r = 100v, v gs = 0v resistive switching times v gs = 10v, v ds = 50v, i d = 0.5 ? i d25 r g = 30 (external) preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. pins: 1 - gate 2 - drain 3 - source to-220 outline to-263 outline
? 2010 ixys corporation, all rights reserved ixta05n100p IXTP05N100P fig. 1. output characteristics @ t j = 25oc 0 0.1 0.2 0.3 0.4 0.5 0 2 4 6 8 10121416 v ds - volts i d - amperes v gs = 10v 7v 4 v 5v 6v fig. 2. extended output characteristics @ t j = 25oc 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 5 10 15 20 25 30 35 v ds - volts i d - amperes v gs = 10v 7v 4 v 6 v 5 v fig. 3. output characteristics @ t j = 125oc 0 0.1 0.2 0.3 0.4 0.5 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 7v 5 v 6v 4v fig. 4. r ds(on) normalized to i d = 0.25a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 0.50a i d = 0.25a fig. 5. r ds(on) normalized to i d = 0.25a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 0.1 0.2 0.3 0.4 0.5 0.6 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixta05n100p IXTP05N100P fig. 7. input admittance 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.4 0.5 0.6 0.7 0.8 0.9 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0123456789 q g - nanocoulombs v gs - volts v ds = 500v i d = 0.25a i g = 1ma fig. 11. capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0.01 0.1 1 10 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 1ms r ds(on) limit 10ms dc 100s
? 2010 ixys corporation, all rights reserved ixys ref: ixt_05n100p (n1)7-22-10 fig. 13. maximum transient thermal impedance 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w ixta05n100p IXTP05N100P
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