? 2008 ixys corporation, all rights reserved ds100014a(08/08) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 1000 v v gs(th) v ds = v gs , i d = 25 a 2.5 4.5 v i gss v gs = 30v, v ds = 0v 100 na i dss v ds = v dss 25 a v gs = 0v t j = 125 c 500 a r ds(on) v gs = 10v, i d = 375ma, note 1 15 17 high voltage mosfet (electrically isolated tab) n-channel enhancement mode avalanche rated IXTP05N100M symbol test conditions maximum ratings v dss t j = 25c to 150c 1000 v v dgr t j = 25c to 150c, r gs = 1 m 1000 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 700 ma i dm t c = 25 c, pulse width limited by t jm 3 a i a t c = 25 c 1 a e as t c = 25 c 100 mj dv/dt i s i dm , v dd v dss , t j = 150 c 3 v/ns p d t c = 25 c 25 w t j - 55 ... +150 c t jm 150 c t stg - 55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 2.5 g g = gate d = drain s = source features plastic overmolded tab for electrical isolation international standard package avalanche rated low package inductance - easy to drive and to protect advantages easy to mount space savings high power density overmolded to-220 (i xtp...m ) outline g d s isolated tab v dss = 1000v i d25 = 700ma r ds(on) 17
IXTP05N100M ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 500ma, note 1 0.55 0.93 s c iss 260 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 22 pf c rss 8 pf t d(on) resistive switching times 11 ns t r v gs = 10v, v ds = 0.5 v dss , i d = 1a 19 ns t d(off) r g = 47 (external) 40 ns t f 28 ns q g(on) 7.8 nc q gs v gs = 10v, v ds = 0.5 v dss , i d = 1a 1.4 nc q gd 4.1 nc r thjc 5.0 c/w source-drain diode characteristic values (t j = 25 c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0v 750 ma i sm repetitive, pulse width limited by t jm 3 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 710 ns notes:1. pulse test, t 300 s; duty cycle, d 2 %. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 12 3 isolated to-220 (i xtp...m ) i f = 750ma, -di/dt = 100a/ s, v r = 100v, v gs = 0v
? 2008 ixys corporation, all rights reserved IXTP05N100M fig. 1. output characteristics @ 25oc 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5.5v 5v fig. 2. output characteristics @ 125oc 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 v ds - volts i d - amperes v gs = 10v 7v 6v 5v 4.5v 5.5v fig. 3. r ds(on) normalized to i d = 375ma value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 750ma i d = 375ma fig. 4. r ds(on) normalized to i d = 375ma value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. input admittance 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 5. maximum drain current vs. case temperature 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
IXTP05N100M ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. transconductance 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 8. forward voltage drop of intrinsic diode 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 9. gate charge 0 1 2 3 4 5 6 7 8 9 10 012345678 q g - nanocoulombs v gs - volts v ds = 500v i d = 1a i g = 1ma fig. 10. capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 11. maximum transient thermal impedance 0.1 1.0 10.0 0.0001 0.001 0.01 0.1 1 10 100 pulse width - seconds z (th)jc - oc / w ixys ref: t_05n100m(1t)7-29-08
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