elektronische bauelemente ssg4953 -6 a, -30 v, r ds(on) 45 m ? dual-p enhancement mode power mosfet 21-jul-2014 rev. f page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a h b m d c j k f l e n g rohs compliant product a suffix of ?-c? specifies halogen & lead-free description the ssg4953 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5v. the device is suitable for use as a load switch or in pwm applications. it may be used in a common drain arrangement to from a bidirectional blocking switch. features ? simple drive requirement ? lower on-resistance ? low gate charge marking package information package mpq leader size sop-8 3k 13? inch maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v t a = 25c -6 continuous drain current @ v gs =10v 1 t a = 100c i d -4 a pulsed drain current 2 i dm -12 a single pulse avalanche energy 3 eas 108 mj avalanche current i as 19 a total power dissipation 4 t a = 25c p d 1.5 w operating junction & stor age temperature range t j , t stg -55 ~ 150 c thermal resistance ratings thermal resistance junction-ambient 1 (max.) r ja 83 c / w thermal resistance junction-case 1 (max.) r jc 60 c / w sop-8 millimete r millimete r ref. min. max. ref. min. max. a 5.80 6.20 h 0.35 0.49 b 4.80 5.00 j 0.375 ref. c 3.80 4.00 k 45 d0 8 l 1.35 1.75 e 0.40 0.90 m 0.10 0.25 f 0.19 0.25 n 0.25 ref. g 1.27 typ. 4953ss ????? ? ? = date code s1 g1 g2 s2 d1 d1 d2 d2
elektronische bauelemente ssg4953 -6 a, -30 v, r ds(on) 45 m ? dual-p enhancement mode power mosfet 21-jul-2014 rev. f page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test condition static drain-source breakdown voltage bv dss -30 - - v v gs =0v, i d = -250 a gate-threshold voltage v gs(th) -1 - -2.5 v v ds =v gs , i d = -250 a forward transfer conductance g fs - 6 - s v ds = -10v, i d = -6a gate-body leakage i gss - - 100 na v gs =20v drain-source leakage current i dss - - -1 a v ds = -24v,v gs =0 - - 45 v gs = -10v, i d = -5a drain-source on-resistance 2 r ds(on) - - 82 m ? v gs = -4.5v, i d = -4a total gate charge q g - 6.4 - gate-source charge q gs - 2.7 - gate-drain (?miller?) charge q gd - 3.1 - nc i d = -6a v ds = -20v v gs = -4.5v turn-on delay time 2 t d(on) - 9 - rise time t r - 16.6 - turn-off delay time t d(off) - 21 - fall time t f - 21.6 - ns v ds = -12v i d = -5a v gs = -10v r g = 3.3 ? input capacitance c iss - 645 - output capacitance c oss - 272 - reverse transfer capacitance c rss - 105 - pf v gs =0v v ds = -25v f=1.0mhz avalanche characteristics single pulse avalanche energy 5 eas 30 - - mj v dd = -25v, l=0.1mh, i as = -10a source-drain diode forward on voltage 2 v ds - -0.84 -1.2 v i s = -1.7a, v gs =0v continuous source current 1.6 i s - - -6 ns pulsed source current 2.6 i sm - - -12 nc v g = v d =0v force current notes: 1. surface mounted on a 1 inch2 fr-4 board with 2oz copper. 135 /w when mounted on min. copper pad. 2. the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3. the eas data shows max. rating . the test condition is v dd = -25v,v gs = -10v,l=0.1mh,i as = -19a 4. the power dissipation is limited by 150 junction temperature 5. the min. value is 100% eas tested guarantee. 6. the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation.
elektronische bauelemente ssg4953 -6 a, -30 v, r ds(on) 45 m ? dual-p enhancement mode power mosfet 21-jul-2014 rev. f page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
elektronische bauelemente ssg4953 -6 a, -30 v, r ds(on) 45 m ? dual-p enhancement mode power mosfet 21-jul-2014 rev. f page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
|
