?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com fdd6n50/FDU6N50 rev. a fdd6n50/FDU6N50 500v n-channel mosfet january 2006 unifet tm fdd6n50 /FDU6N50 500v n-channel mosfet features ? 6a, 500v, r ds(on) = 0.9 ? @v gs = 10 v ? low gate charge ( typical 12.8 nc) ?low c rss ( typical 9 pf) ?fast switching ? 100% avalanche tested ? improved dv/dt capability description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficient switched mode power supplies and active power factor correction. i-pak fdu series d-pak fdd series gs d gs d d g s absolute maximum ratings symbol parameter fdd6n50/FDU6N50 unit v dss drain-source voltage 500 v i d drain current - continuous (t c = 25 c) - continuous (t c = 100 c) 6 3.8 a a i dm drain current - pulsed (note 1) 24 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 270 mj i ar avalanche current (note 1) 6 a e ar repetitive avalanche energy (note 1) 8.9 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 c) - derate above 25 c 89 0.71 w w/ c t j, t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 c thermal characteristics symbol parameter min. max. unit r jc thermal resistance, junction-to-case -- 1.4 c/w r ja thermal resistance, junction-to-ambient -- 83 c/w
2 www.fairchildsemi.com fdd6n50/FDU6N50 rev. a fdd6n50/FDU6N50 500v n-channel mosfet package marking and ordering information device marking device package reel size tape width quantity fdd6n50 fdd6n50tm d-pak 380mm 16mm 2500 fdd6n50 fdd6n50tf d-pak 380mm 16mm 2000 FDU6N50 FDU6N50tu i-pak - - 70 electrical characteristics t c = 25c unless otherwise noted symbol parameter conditions min. typ. max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250 a 500 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c -- 0.5 -- v/ c i dss zero gate voltage drain current v ds = 500v, v gs = 0v v ds = 400v, t c = 125 c -- -- -- -- 1 10 a a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3.0 -- 5.0 v r ds(on) static drain-source on-resistance v gs = 10v, i d = 3a -- 0.76 0.9 ? g fs forward transconductance v ds = 40v, i d = 3a (note 4) -- 2.5 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 720 940 pf c oss output capacitance -- 95 190 pf c rss reverse transfer capacitance -- 9 13.5 pf switching characteristics t d(on) turn-on delay time v dd = 250v, i d = 6a r g = 25 ? (note 4, 5) -- 6 20 ns t r turn-on rise time -- 55 120 ns t d(off) turn-off delay time -- 25 60 ns t f turn-off fall time -- 35 80 ns q g total gate charge v ds = 400v, i d = 6a v gs = 10v (note 4, 5) -- 12.8 16.6 nc q gs gate-source charge -- 3.7 -- nc q gd gate-drain charge -- 5.8 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 6 a i sm maximum pulsed drain-source diode forward current -- -- 24 a v sd drain-source diode forward voltage v gs = 0v, i s = 6a -- -- 1.4 v t rr reverse recovery time v gs = 0v, i s = 6a di f /dt =100a/ s (note 4) -- 275 -- ns q rr reverse recovery charge -- 1.7 -- c notes: 1. repetitive rating: pulse width limit ed by maximum junction temperature 2. i as = 6a, v dd = 50v, l=13.5mh, r g = 25 ? , starting t j = 25 c 3. i sd 6a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics
3 www.fairchildsemi.com fdd6n50/FDU6N50 rev. a fdd6n50/FDU6N50 500v n-channel mosfet typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage v ariation vs. s ource current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 246810 10 -2 10 -1 10 0 10 1 note 1. v ds = 40v 2. 250 s pulse test -55 150 25 i d , drain current [a] v gs , gate-source voltage [v] 0 1020304050 0 5 10 15 20 v gs top : 10.0 v 8.0v 7.5 v 7.0 v 6.5 v 6.0 v 5.5 v bottom : 5.0 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ],drain-source on-resistance i d , drain current [a] 0.20.40.60.81.01.21.41.61.8 10 -1 10 0 10 1 25 150 notes : 1. v gs = 0v 2. 250 s pulse test i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 0 10 1 10 100 1000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 051015 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 400v note : i d = 6a v gs , gate-source voltage [v] q g , total gate charge [nc]
4 www.fairchildsemi.com fdd6n50/FDU6N50 rev. a fdd6n50/FDU6N50 500v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 i notes : 1. v gs = 0 v 2. i d = 250 p a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i notes : 1. v gs = 10 v 2. i d = 3 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 25 50 75 100 125 150 0 2 4 6 8 i d , drain current [a] t c , case temperature [ ] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 us operation in this area is limited by r ds(on) dc 10 ms 1 ms 100 us notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1. z jc (t) = 1.4 /w m ax. 2. d uty factor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2
5 www.fairchildsemi.com fdd6n50/FDU6N50 rev. a fdd6n50/FDU6N50 500v n-channel mosfet gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switch ing test circuit & waveforms
6 www.fairchildsemi.com fdd6n50/FDU6N50 rev. a fdd6n50/FDU6N50 500v n-channel mosfet peak diode recovery dv/d t test circuit & waveforms
7 www.fairchildsemi.com fdd6n50/FDU6N50 rev. a fdd6n50/FDU6N50 500v n-channel mosfet mechanical dimensions d-pak dimensions in millimeters
8 www.fairchildsemi.com fdd6n50/FDU6N50 rev. a fdd6n50/FDU6N50 500v n-channel mosfet mechanical dimensions (continued) i-pak dimensions in millimeters
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? poweredge? fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? intellimax? rev. i18 acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? scalarpump? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? unifet? vcx? wire? across the board. around the world.? the power franchise ? programmable active droop?
|
