description: the central semiconductor CXT491E type is an npn silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current, general purpose amplifier applications. marking code: full part number maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 80 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 5.0 v collector current i c 1.0 a base current i b 200 ma collector current (peak) i cm 2.0 a power dissipation p d 1.2 w operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance ja 104 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =60v 100 na i ebo v eb =4.0v 100 na bv cbo i c =100a 80 v bv ceo i c =10ma 60 v bv ebo i e =100a 5.0 v v ce(sat) i c =500ma, i b =50ma 0.20 v v ce(sat) i c =1.0a, i b =100ma 0.40 v v be(sat) i c =1.0a, i b =100ma 1.1 v v be(on) v ce =5.0v, i c =1.0a 1.0 v h fe v ce =5.0v, i c =1.0ma 200 h fe v ce =5.0v, i c =500ma 200 600 h fe v ce =5.0v, i c =1.0a 50 h fe v ce =5.0v, i c =2.0a 15 f t v ce =10v, i c =50ma, f=100mhz 150 mhz c ob v cb =10v, i e =0, f=1.0mhz 10 pf CXT491E surface mount npn silicon transistor sot-89 case central semiconductor corp. tm r1 (20-may 2004)
lead code: 1) emitter 2) collector 3) base central semiconductor corp. tm sot-89 case - mechanical outline CXT491E surface mount npn silicon transistor min max min max a 0.055 0.067 1.40 1.70 b c 0.014 0.018 0.35 0.46 d 0.173 0.185 4.40 4.70 e 0.064 0.074 1.62 1.87 f 0.146 0.177 3.70 4.50 g 0.090 0.106 2.29 2.70 h 0.028 0.051 0.70 1.30 j 0.014 0.019 0.36 0.48 k 0.017 0.023 0.44 0.58 l m sot-89 (rev: r4) dimensions symbol inches millimeters 4 4 0.059 0.118 1.50 3.00 r1 (20-may 2004) marking code: full part number bottom view
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