symbol v ds v gs i dm t j , t stg symbol typ max 75 100 115 150 r jl 48 60 maximum junction-to-lead c steady-state c/w parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w junction and storage temperature range -55 to 150 c thermal characteristics t a =70c 0.8 w power dissipation t a =25c p d 1.25 a t a =70c 1.7 pulsed drain current b 10 continuous drain current a t a =25c i d 2.1 drain-source voltage 55 v gate-source voltage 12 v absolute maximum ratings t a =25c unless otherwise noted parameter maximum units n-channel enhancement mode field effect transistor features v ds (v) = 55v i d = 2.1a (v gs = 4.5v) r ds(on) < 1 60 m (v gs = 4.5v) r ds(on) < 200m (v gs = 2.5v) general description the AO3422 uses advanced trench technology to provide excellent r ds(on) and low gate charge. it offers operation over a wide gate drive range from 2.5v to 12v. this device is suitable for use as a load switch. standard product g d s to-236 (sot-23) AO3422 AO3422 is pb-free (meets rohs & sony 259 specifications). AO3422l is a green product ordering option. AO3422 and AO3422l are electrically identical. 2014-5-28 1 www.kersemi.com
a: the value of r?ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a=25c. the value in any given application depends on the user's specific board design. the current rating is based on the t ? 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ?ja is the sum of the thermal impedence from junction to lead r?jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 ?s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a=25c. the soa curve provides a single pulse rating. 2014-5-28 2 www.kersemi.com AO3422
typical electrical and thermal characteristics 0 2 4 6 8 10 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =2v 2.5v 5v 3.5v 10v 0 2 4 6 8 1 1.25 1.5 1.75 2 2.25 2.5 v gs (volts) figure 2: transfer characteristics i d (a) 100 120 140 160 180 200 012345 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ) 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =2.5v v gs =4.5 10 60 110 160 210 260 310 360 0246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ) 25c 125c v ds =5v v gs =2.5v v gs =4.5v i d =2.3a 25c 125c 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 2014-5-28 3 www.kersemi.com AO3422
s 0 1 2 3 4 5 0123 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 40 80 120 160 200 240 280 320 360 400 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 5 10 15 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to - ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =27.5v i d =2.1a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =100c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c typical electrical and thermal characteristic 2014-5-28 4 www.kersemi.com AO3422
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