s m d ty p e w w w . ke x in . com . c n 1 m osfe t n- ch an n el m osf et a o 3422 ( k o 3 4 2 2 ) f e a tu r e s v d s ( v ) = 5 5 v i d = 2 . 1 a ( v g s = 4 . 5 v ) r d s ( o n ) 1 6 0 m ( v g s = 4 . 5 v ) r d s ( o n ) 2 0 0 m ( v g s = 2 . 5 v ) 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 1 . gate 2 . source 3 . drain a b s o l u te m a x i m u m ra ti n g s t a = 2 5 s y m b o l r a t i n g u n i t v d s 5 5 v g s 1 2 t a = 2 5 2 . 1 t a = 7 0 1 . 7 i d m 1 0 t a = 2 5 1 . 2 5 t a = 7 0 0 . 8 t 1 0 s 1 0 0 s t e a d y - s t a t e 1 5 0 r t h jc 6 0 t j 1 5 0 t st g - 5 5 t o 1 5 0 j u n c t i o n t e m p e r a t u r e s t o r a g e t e m p e r a t u r e r a n g e p d w p o w e r d i s s i p a t i o n / w t h e r m a l r e s i s t a n c e . j u n c t i o n - t o - c a s e t h e r m a l r e s i s t a n c e . j u n c t i o n - t o - a m b i e n t r t h ja v a p u l s e d d r a i n c u r r e n t p a r a m e t e r c o n t i n u o u s d r a i n c u r r e n t i d d r a i n - s o u r c e v o l t a g e g a t e - s o u r c e v o l t a g e g d s
s m d ty p e w w w . k exi n . co m . c n 2 m osf e t n- ch an n el m osf et a o 3422 ( k o 3 4 2 2 ) e l e c tr i c a l ch a r a c te r i s ti c s t a = 2 5 * t h e s t a t i c c h a r a c t e r i s t i c s i n f i g u r e s 1 t o 6 a r e o b t a i n e d u s i n g < 3 0 0 u s p u l s e s , d u t y c y c l e 0 . 5 % m a x . m a r k i n g m a r k i n g a r * * p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e v d s s i d = 1 0 m a , v g s = 0 v 5 5 v v d s = 4 4 v , v g s = 0 v 1 v d s = 4 4 v , v g s = 0 v , t j = 5 5 5 g a t e - b o d y l e a k a g e c u r r e n t i g s s v d s = 0 v , v g s = 1 2 v 1 0 0 n a g a t e t h r e s h o l d v o l t a g e v g s ( t h ) v d s = v g s , i d = 2 5 0 a 0 . 6 2 v v g s = 4 . 5 v , i d = 2 . 1 a 1 6 0 v g s = 4 . 5 v , i d = 2 . 1 a t j = 1 2 5 2 1 0 v g s = 2 . 5 v , i d = 1 . 5 a 2 0 0 o n s t a t e d r a i n c u r r e n t i d ( o n ) v g s = 4 . 5 v , v d s = 5 v 1 0 a f o r w a r d t r a n s c o n d u c t a n c e g f s v d s = 5 v , i d = 2 . 1 a 1 1 s i n p u t c a p a c i t a n c e c i ss 2 1 4 3 0 0 o u t p u t c a p a c i t a n c e c o ss 3 1 r e v e r s e t r a n s f e r c a p a c i t a n c e c r ss 1 2 . 6 g a t e r e s i s t a n c e r g v g s = 0 v , v d s = 0 v , f = 1 m h z 1 . 3 3 t o t a l g a t e c h a r g e q g 2 . 6 3 . 3 g a t e s o u r c e c h a r g e q g s 0 . 6 g a t e d r a i n c h a r g e q g d 0 . 8 t u r n - o n d e l a y t i m e t d ( o n ) 2 . 3 t u r n - o n r i s e t i m e t r 2 . 4 t u r n - o f f d e l a y t i m e t d ( o f f ) 1 6 . 5 t u r n - o f f f a l l t i m e t f 2 b o d y d i o d e r e v e r s e r e c o v e r y t i m e t r r 2 0 3 0 b o d y d i o d e r e v e r s e r e c o v e r y c h a r g e q r r 1 7 n c m a x i m u m b o d y - d i o d e c o n t i n u o u s c u r r e n t i s 1 a d i o d e f o r w a r d v o l t a g e v s d i s = 1 a , v g s = 0 v 1 v z e r o g a t e v o l t a g e d r a i n c u r r e n t i d s s u a m r d s ( o n ) s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e v g s = 4 . 5 v , v d s = 2 7 . 5 v , i d = 2 . 1 a p f n c n s v g s = 1 0 v , v d s = 2 7 . 5 v , r l = 1 2 , r g = 3 i f = 2 . 1 a , d i / d t = 1 0 0 a / u s v g s = 0 v , v d s = 2 5 v , f = 1 m h z
s m d ty p e w w w . k e x i n . c o m . c n 3 m osf e t n- ch an n el m osf et a o 3422 ( k o 3 4 2 2 ) t y p i c a l ch a r a c te r i s i ti c s 0 2 4 6 8 10 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a ) v gs =2v 2.5v 5v 3.5v 10v 0 2 4 6 8 1 1.25 1.5 1.75 2 2.25 2.5 v gs (volts) figure 2: transfer characteristics i d (a ) 100 120 140 160 180 200 0 1 2 3 4 5 i d (a) figure 3: on-resistance vs. drain current and gate voltage r d s ( o n ) ( m ? ) 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature n o r m a li z e d o n - r es i s t a n c e v gs =2.5v v gs =4.5 10 60 110 160 210 260 310 360 0 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r d s ( o n ) ( m ? ) 25c 125c v ds =5v v gs =2.5v v gs =4.5v i d =2.3a 25c 125c 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd (volts) figure 6: body-diode characteristics i s (a ) 25c 125c
s m d ty p e w w w . k exi n . co m . c n 4 m osfe t . n- ch an n el m osf et a o 3422 ( k o 3 4 2 2 ) t y p i c a l ch a r a c te r i s i ti c s 0 1 2 3 4 5 0 1 2 3 q g (nc) figure 7: gate-charge characteristics v g s ( v o lt s ) 0 40 80 120 160 200 240 280 320 360 400 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics ca p aci t a n ce ( pf ) c iss 0 5 10 15 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) p o w e r ( w ) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z j a n o r m ali z e d t r a n sie n t th er m a l res i s t a n c e c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amp s ) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1 s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =27.5v i d =2.1a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =100c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c
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