? 2008 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1200 v v dgr t j = 25 c to 150 c, r gs = 1m 1200 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 0.8 a i dm t c = 25 c, pulse width limited by t jm 1.8 a i a t c = 25 c 0.8 a e as t c = 25 c80mj dv/dt i s i dm , v dd v dss , t j 150 c 10 v/ns p d t c = 25 c50w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-263 2.50 g to-220 3.00 g ds99868a (04/08) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 1200 v v gs(th) v ds = v gs , i d = 50 a 2.5 4.5 v i gss v gs = 20v, v ds = 0v 50 na i dss v ds = v dss 5 a v gs = 0v t j = 125 c 100 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 20.5 25 polar tm power mosfet n-channel enhancement mode avalanche rated ixta08n120p IXTP08N120P v dss = 1200v i d25 = 0.8a r ds(on) 25 g = gate d = drain s = source tab = drain features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density to-263 (i xta ) to-220 (i xtp ) d (tab) g s g s (tab) applications: z high voltage switched-mode and resonant-mode power supplies z high voltage pulse power applications z high voltage discharge circuits in lasers pulsers, spark igniters, rf generators z high voltage dc-dc converters z high voltage dc-ac inverters
ixys reserves the right to change limits, test conditions, and dimensions. ixta08n120p IXTP08N120P symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 30v, i d = 0.5 ? i d25 , note 1 0.38 0.63 s c iss 333 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 20 pf c rss 4.7 pf t d(on) resistive switching times 20 ns t r v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 26 ns t d(off) r g = 50 (external) 55 ns t f 24 ns q g(on) 14.0 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 2.0 nc q gd 8.2 nc r thjc 2.5 c/w r thcs (to-220) 0.50 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0v 0.8 a i sm repetitive, pulse width limited by t jm 2.4 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr i f = 0.8a, -di/dt = 100a/ s, 900 ns v r = 100v, v gs = 0v note 1: pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 pins: 1 - gate 2 - drain to-220 (ixtp) outline to-263 (ixta) outline
? 2008 ixys corporation, all rights reserved fig. 1. extended output characteristics @ 25oc 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 3 6 9 12 15 18 21 24 27 30 33 v ds - volts i d - amperes v gs = 10v 7v 5v 6v fig. 2. output characteristics @ 125oc 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 5 10 15 20 25 30 35 40 v ds - volts i d - amperes v gs = 10v 6v 5v fig. 3. r ds(on) normalized to i d = 0.4a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 0.8a i d = 0.4a fig. 4. r ds(on) normalized to i d = 0.4a value vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. input admittance 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 5. maximum drain current vs. case temperature 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes ixta08n120p IXTP08N120P
ixys reserves the right to change limits, test conditions, and dimensions. ixta08n120p IXTP08N120P ixys ref: t_08n120p(1c) 4-02-08-a fig. 7. transconductance 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 8. forward voltage drop of intrinsic diode 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0.4 0.5 0.6 0.7 0.8 0.9 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 q g - nanocoulombs v gs - volts v ds = 600v i d = 0.4a i g = 1ma fig. 9. capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 11. maximum transient thermal impedance 0.1 1.0 10.0 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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