l/ na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 the rf tmos line rf power field-effect transistors n-channel enhancement-mode tmos designed for wideband large-signal amplifier and oscillator applications in the 2 to 400 mhz range, in either single ended or push-pull configuration. ? guaranteed 28 volt, 150 mhz performance mrf13b MRF136Y output power = 15 watts output power = 30 watts narrowband gain = 16 db (typ) broadband gain - 14 db (typ) mrf136 MRF136Y 15 w, 30 w 2-400 mhz n-channel tmos broadband rf power fets efficiency = 60% (typical) ? small-signal and large-signal characterization ? 100% tested for load mismatch at all phase angles with 30:1 vswr ? space saving package for push-pull circuit applications? MRF136Y ? excellent thermal stability, ideally suited for class a operation ? facilitates manual gain control, alc and modulation techniques maximum ratings efficiency = 54% (typical) mrf136 os mrf136 biting ^drain-source voltage drain-gate voltage (rqs = 1 mill gate-source voltage brain-current ? continuous total device dissipation w tc = 25c derate above 25c _j'rage temperature range ^operating junction temperature symbol vdss vdgr vgs id pd t?tg tj vuluc mrf136 65 65 mrf136v 65 65 40 2.5 55 0.314 5 100 0.571 -65 to +150 200 unit vdc vdc vdc adc want w/c c ?c hjermal characteristics quricteriitie .jjgrnal resistance. junction to case symbol rsjc mix mrf136 3.2 MRF136Y 1.75 unit ?c/w b and packaging ? mos dsvicei are tutcaptibla to damage from elcctroitatic charg*. ft???on?bl? prectution* in handling and packaging mos ""??'jliabn*v?d. quality semi-conductors
mrf136, MRF136Y electrical characteristics (tc - 25c unleu othenwne noted) chincterlitlc symbol tvp mix untt off characteristics (note 1) drain-source breakdown voltage (vqs - 0. id ? 5 ma) zero-gate voltage drain current (vds - 28 v, vgs - 01 gate-source leakage current (vgs = 40 v, vds - 01 vibridss idss igss 66 ? ? ? ? ? ? 2 1 vdc made aiadc on characteristics (note 1) gate threshold voltage (vds = 10 v, id - 25 mai forward transconductance (vds = 10 v. id - 250 ma) vgs(th) ?t 1 250 3 400 6 ? vdc fflrflnos dynamic characteristics (note 1) input capacitance (vds = 28 v, vqs = o, f = i mh'> output capacitance (vds = 28 v, vqs = o, i = i mhz) reverse transfer capacitance (vos - 28 v, vgs - "? ' - 1 mhz> cis. '?oat cr.a ? ? ? 24 27 5.5 ? ? ? pf pf pf functional characteristics (note 2) noise figure mrf136 (vds = 28 vdc. id = 500 ma, f = 150 mhz) common source power gain (figure 1) mrf136 (vdd = 28 vdc. pout = 16 w, f = 180 mhz, idq = 25 ma) common source power gain (figure 2) MRF136Y (vdd = 28 vdc, pout = 30 w, f = 150 mhz, idq = 100 ma) drain efficiency (figure 1) mrf136 (vdd = 28 vdc, pout = 15 w, f ? 150 mhz, idq - 25 ma) drain efficiency (figure 2) MRF136Y (vdd = 28 vdc, pout = 30 w. f = 150 mhz, idq = 100 ma) electrical ruggedness (figure 1) mrf136 (vdd = 28 vdc. pout = 15 w, f = 150 mhz, idq - 25 ma, vswr 30:1 at all phase angles) electrical ruggedness (figure 2) MRF136Y (vdd ? 28 vdc, pout - 30 w, f = 150 mhz. i0q = 100 ma, vswr 30:1 at all phase angles) nf gps gp? ?n 1 * ? 13 12 50 50 1 16 14 60 54 ? ? ? ? ? db db db % % no degradation in output power no degradation in output power notn: 1. for mrf138y, each lid. muiurtd mparattly. 2. for MRF136Y meaiured in puih-pull configuration.
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