? semiconductor components industries, llc, 2015 august, 2015 ? rev. 4 1 publication order number: NTMFS4983NF/d NTMFS4983NF power mosfet 30 v, 106 a, single n?channel, so?8 fl features ? integrated schottky diode ? low r ds(on) to minimize conduction losses ? low capacitance to minimize driver losses ? optimized gate charge to minimize switching losses ? these devices are pb?free, halogen free/bfr free and are rohs compliant applications ? cpu power delivery ? synchronous rectification for dc?dc converters ? low side switching ? telecom secondary side rectification maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain?to?source v oltage v dss 30 v gate?to?source v oltage v gs 20 v continuous drain current r ja (note 1) steady state t a = 25 c i d 30 a t a = 85 c 22 power dissipation r ja (note 1) t a = 25 c p d 3.13 w continuous drain current r ja 10 sec t a = 25 c i d 48 a t a = 85 c 34 power dissipation r ja, t 10 sec t a = 25 c p d 7.7 w continuous drain current r ja (note 2) t a = 25 c i d 22 a t a = 85 c 16 power dissipation r ja (note 2) t a = 25 c p d 1.7 w continuous drain current r jc (note 1) t c = 25 c i d 106 a t c = 85 c 76 power dissipation r jc (note 1) t c = 25 c p d 38 w pulsed drain current t p =10 s t a = 25 c i dm 320 a current limited by package t a = 25 c i dmaxpkg 100 a operating junction and storage temperature t j , t stg ?55 to +150 c source current (body diode) i s 54 a drain to source dv/dt dv/dt 6 v/ns single pulse drain?to?source avalanche energy (v dd = 50 v, v gs = 10 v, i l = 45 a pk , l = 0.1 mh, r g = 25 eas 101 mj lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. so?8 flat lead case 488aa style 1 marking diagram www. onsemi.com a = assembly location y = year w = work week zz = lot traceability 4983nf aywzz 1 v (br)dss r ds(on) max i d max 30 v 2.1 m @ 10 v 106 a 3.1 m @ 4.5 v n?channel mosfet device package shipping ? ordering information NTMFS4983NFt1g so?8fl (pb?free) 1500 / tape & reel NTMFS4983NFt3g so?8fl (pb?free) 5000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. s s s g d d d d * for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. g s d (5, 6) (4) (1, 2, 3)
NTMFS4983NF www. onsemi.com 2 thermal resistance maximum ratings parameter symbol value unit junction?to?case (drain) r jc 3.3 c/w junction?to?ambient ? steady state (note 1) r ja 40 junction?to?ambient ? steady state (note 2) r ja 74 junction?to?ambient ? t 10 sec r ja 16.3 1. surface?mounted on fr4 board using 1 sq?in pad, 2 oz cu. 2. surface?mounted on fr4 board using the minimum recommended pad size of 100 mm 2 . electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = 1.0 ma 30 v drain?to?source breakdown voltage temperature coefficient v (br)dss / t j i d = 10 ma, referenced to 25 c 15 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 24 v t j = 25 c 500 a gate?to?source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v gs = v ds , i d = 1.0 ma 1.2 1.7 2.3 v negative threshold temperature coefficient v gs(th) /t j i d = 10 ma, referenced to 25 c 5.0 mv/ c drain?to?source on resistance r ds(on) v gs = 10 v i d = 30 a 1.6 2.1 m i d = 15 a 1.6 v gs = 4.5 v i d = 30 a 2.5 3.1 i d = 15 a 2.5 forward transconductance g fs v ds = 1.5 v, i d = 15 a 60 s charges and capacitances input capacitance c iss v gs = 0 v, f = 1 mhz, v ds = 15 v 3250 pf output capacitance c oss 1340 reverse transfer capacitance c rss 90 total gate charge q g(tot) v gs = 4.5 v, v ds = 15 v; i d = 30 a 22.6 nc threshold gate charge q g(th) 2.9 gate?to?source charge q gs 7.0 gate?to?drain charge q gd 6.9 total gate charge q g(tot) v gs = 10 v, v ds = 15 v, i d = 30 a 47.9 nc switching characteristics (note 4) turn?on delay time t d(on) v gs = 4.5 v, v ds = 15 v, i d = 15 a, r g = 3.0 13.5 ns rise time t r 24.9 turn?off delay time t d(off) 28.7 fall time t f 10.7 product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. switching characteristics are independent of operating junction temperatures.
NTMFS4983NF www. onsemi.com 3 electrical characteristics (t j = 25 c unless otherwise specified) parameter unit max typ min test condition symbol switching characteristics (note 4) turn?on delay time t d(on) v gs = 10 v, v ds = 15 v, i d = 15 a, r g = 3.0 9.4 ns rise time t r 16.7 turn?off delay time t d(off) 35.2 fall time t f 7.4 drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 2 a t j = 25 c 0.4 0.7 v t j = 125 c 0.32 reverse recovery time t rr v gs = 0 v, di s /dt = 100 a/ s, i s = 2 a 45 ns charge time t a 23 discharge time t b 22 reverse recovery charge q rr 50 nc package parasitic values source inductance l s t a = 25 c 0.65 nh drain inductance l d 0.20 gate inductance l g 1.5 gate resistance r g 1.0 product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. switching characteristics are independent of operating junction temperatures.
NTMFS4983NF www. onsemi.com 4 typical performance curves 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 180 190 200 012345 v ds , drain?to?source voltage (v) i d , drain current (a) figure 1. on?region characteristics v gs = 3.4 v 3.6 v 3.2 v 3.0 v 2.8 v 2.6 v 2.4 v 4.0 v 4.2 v 4.4 v to 4.5 v 7.5 v to 10 v 0 20 40 60 80 100 120 140 160 180 200 1.0 1.5 2.0 2.5 3.0 3.5 4 .0 v gs , gate?t o?source voltage (v) i d , drain current (a) figure 2. transfer characteristics v ds = 5 v t j = 25 c t j = ?55 c t j = 125 c 0.0e+00 0.2e?02 0.4e?02 0.6e?02 0.8e?02 1.0e?02 1.2e?02 1.4e?02 1.6e?02 1.8e?02 2.0e?02 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 figure 3. on?resistance vs. gate?to?source voltage v gs , gate?t o?source voltage (v) r ds(on) , drain?to?source resistance ( ) i d = 30 a t j = 25 c 3.0e?03 2.8e?03 2.6e?03 2.4e?03 2.2e?03 2.0e?03 1.8e?03 1.6e?03 1.4e?03 1.2e?03 figure 4. on?resistance vs. drain current and gate voltage i d , drain current (a) r ds(on) , drain?to?source resistance ( ) 5 20 35 50 65 80 95 110 125 140 1 55 v gs = 4.5 v v gs = 10 v t j = 25 c 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 ?50 ?25 0 25 50 75 100 125 150 figure 5. on?resistance variation with temperature t j , junction temperature ( c) r ds(on) , drain?to?source resistance (normalized) i d = 20 a v gs = 10 v figure 6. drain?to?source leakage current vs. voltage v ds , drain?to?source voltage (v) i dss , leakage (a) 1.00e?01 1.00e?02 1.00e?03 1.00e?04 1.00e?05 05 25 20 10 15 v gs = 0 v t j = 150 c t j = 125 c t j = 25 c
NTMFS4983NF www. onsemi.com 5 typical performance curves 0 400 800 1200 1600 2000 2400 2800 3200 3600 4000 0 5 10 15 20 25 30 v ds , drain?to?source voltage (v) figure 7. capacitance variation c oss c rss c iss v gs = 0 v t j = 25 c c, capacitance (pf) 0 1 2 3 4 5 6 7 8 9 10 11 0 5 10 15 20 25 30 35 40 45 50 i d = 30 a t j = 25 c v dd = 15 v v gs = 10 v figure 8. gate?to?source and drain?to?source voltage vs. total charge q g , total gate charge (nc) v gs , gate?to?source voltage (v) q t q gs q gd 1 10 100 1000 1 10 100 r g , gate resistance ( ) t, time (ns) v dd = 15 v i d = 10 a v gs = 10 v t d(off) t d(on) t f t r figure 9. resistive switching time variation vs. gate resistance 0 1 2 3 4 5 6 7 8 9 10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 v sd , source?to?drain voltage (v) v gs = 0 v t j = 25 c figure 10. diode forward voltage vs. current i s , source current (a) 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 0 v < v gs < 10 v single pulse t c = 25 c figure 11. maximum rated forward biased safe operating area v ds , drain?to?source voltage (v) rds(on) limit thermal limit package limit 10 s 100 s 1 ms 10 ms dc i d , drain current (a) 0 10 20 30 40 50 60 70 80 90 100 110 25 50 75 100 125 150 t j , starting junction temperature ( c) i d = 45 a figure 12. maximum avalanche energy vs. starting junction temperature e as , single pulse drain?to?source avalanche energy (mj)
NTMFS4983NF www. onsemi.com 6 typical performance curves 0.1 0.2 0.02 d = 0.5 0.05 0.01 single pulse r(t) ( c/w) pulse time (s) figure 13. thermal response 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 100 0 0.01 0.1 1 10 100
NTMFS4983NF www. onsemi.com 7 package dimensions dfn5 5x6, 1.27p (so?8fl) case 488aa issue m style 1: pin 1. source 2. source 3. source 4. gate 5. drain m 3.00 3.40 0 ??? 3.80 12 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeter. 3. dimension d1 and e1 do not include mold flash protrusions or gate burrs. 1234 top view side view bottom view d1 e1 d e 2 2 b a 0.20 c 0.20 c 2 x 2 x dim min nom millimeters a 0.90 1.00 a1 0.00 ??? b 0.33 0.41 c 0.23 0.28 d 5.15 d1 4.70 4.90 d2 3.80 4.00 e 6.15 e1 5.70 5.90 e2 3.45 3.65 e 1.27 bsc g 0.51 0.575 k 1.20 1.35 l 0.51 0.575 l1 0.125 ref a 0.10 c 0.10 c detail a 14 l1 e/2 8x d2 g e2 k b a 0.10 b c 0.05 c l detail a a1 c 4 x c seating plane max 1.10 0.05 0.51 0.33 5.10 4.20 6.10 3.85 0.71 1.50 0.71 m *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 1.270 2x 0.750 1.000 0.905 4.530 1.530 4.560 0.495 3.200 1.330 0.965 2x 2x 4x 4x pin 5 (exposed pad) 5.00 5.30 6.00 6.30 pitch dimensions: millimeters 1 recommended e on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 NTMFS4983NF/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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