APTMC60TLM55CT3AG APTMC60TLM55CT3AG C rev 2 july, 2013 www.microsemi.com 1-8 all ratings @ t j = 25c unless otherwise specified q1 to q4 absolute maximum ratings (per sic mosfet) these devices are sens itive to electrostatic discharge. proper handling procedures should be follow ed. see application note apt0502 on www.microsemi.com all multiple inputs and outputs must be shorted together 10/11/12 ; 7/8 ; 27/28 ; symbol parameter max ratings unit v dss drain - source breakdown voltage 1200 v i d continuous drain current t c = 25c 55 a t c = 80c 42 i dm pulsed drain current 110 v gs gate - source voltage -10/+25 v r dson drain - source on resistance 49 m p d maximum power dissipation t c = 25c 250 w application ? uninterruptible power supplies features ? sic power mosfet - low r ds(on) - high temperature performance ? sic schottky diode - zero reverse recovery - zero forward recovery - temperature independent switching behavior - positive temperature coefficient on vf ? kelvin emitter for easy drive ? very low stray inductance ? high level of integration ? internal thermistor for temperature monitoring ? aln substrate for improved thermal performance benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? low profile ? rohs compliant three level inverter sic mosfet power module sic power mosfet : v dss = 1200v ; r dson = 49m @ tj = 25c downloaded from: http:///
APTMC60TLM55CT3AG APTMC60TLM55CT3AG C rev 2 july, 2013 www.microsemi.com 2-8 q1 to q4 electrical characteristics (per sic mosfet) symbol characteristic test conditions min typ max unit i dss zero gate voltage drain current v gs = 0v ; v ds = 1200v 25 200 a r ds(on) drain C source on resistance v gs = 20v i d = 40a t j = 25c 40 49 m t j = 150c 75 104 v gs ( th ) gate threshold voltage v gs = v ds , i d = 2ma 1.7 2.2 v i gss gate C source leakage current v gs = 20 v, v ds = 0v 500 na q1 to q4 dynamic characteristics (per sic mosfet) symbol characteristic test conditions min typ max unit c iss input capacitance v gs = 0v v ds = 1000v f = 1mhz 1900 pf c oss output capacitance 160 c rss reverse transfer capacitance 13 q g total gate charge v gs = 20v v bus = 800v i d = 40a 98 nc q gs gate C source charge 22 q gd gate C drain charge 36 t d(on) turn-on delay time v gs = -5/+20v v bus = 800v i d = 40a r l = 20 ? ; r g = 25 12 ns t r rise time 14 t d(off) turn-off delay time 23 t f fall time 18 e on turn on energy inductive switching v gs = -5/+20v v bus = 600v i d = 40a r g = 25 t j = 150c 0.9 mj e off turn off energy t j = 150c 0.5 mj r thjc junction to case thermal resistance 0.5 c/w cr5 & cr6 sic diode ratings and characteristics (per sic diode) symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v i rm maximum reverse leakage current v r =600v t j = 25c 30 180 a t j = 175c 60 900 i f dc forward current tc = 125c 30 a v f diode forward voltage i f = 30a t j = 25c 1.6 1.8 v t j = 175c 2 2.4 q c total capacitive charge i f = 30a, v r = 600v di/dt =1000a/s 84 nc c total capacitance f = 1mhz, v r = 200v 195 pf f = 1mhz, v r = 400v 150 r thjc junction to case thermal resistance 0.8 c/w downloaded from: http:///
APTMC60TLM55CT3AG APTMC60TLM55CT3AG C rev 2 july, 2013 www.microsemi.com 3-8 cr7 & cr8 diode rating s and characteristics (per sic diode) symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v i rm maximum reverse leakage current v r =1200v t j = 25c 96 600 a t j = 175c 168 3000 i f dc forward current tc = 125c 30 a v f diode forward voltage i f = 30a t j = 25c 1.6 1.8 v t j = 175c 2.3 3 q c total capacitive charge i f = 30a, v r = 1200v di/dt =1500a/s 240 nc c total capacitance f = 1mhz, v r = 200v 288 pf f = 1mhz, v r = 400v 207 r thjc junction to case thermal resistance 0.50 c/w temperature sensor ntc (see application note apt0406 on www.microsemi.com ). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ? ?? ? ? ?? ? ? ?? ? ? ?? ? ? = t t b r r t 1 1 exp 25 85/25 25 thermal and package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range sic mosfet -40 150 c sic diode -40 175 t jop recommended junction temperature under switching conditions -40 t j max -25 t stg storage temperature range -40 125 t c operating case temperature -40 125 torque mounting torque to heatsink m4 2 3 n.m wt package weight 110 g t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTMC60TLM55CT3AG APTMC60TLM55CT3AG C rev 2 july, 2013 www.microsemi.com 4-8 sp3 package outline (dimensions in mm) see application note 1906 - mounting instructions for sp3f power modules on www.microsemi.com q1 to q4 typical performance curve ciss crss coss 10 100 1000 10000 0 200 400 600 800 1000 c, capacitance (pf) v ds , drain to source voltage (v) capacitance vs drain to source voltage 0 4 8 12 16 20 0 20406080100 v gs , gate to source voltage (v) gate charge (nc) gate charge vs gate to source voltage v gs = 20v i d = 40a v ds = 800v zcs hard switching zvs 0 100 200 300 400 500 600 700 20 30 40 50 60 frequency (khz) i d , drain current (a) operating frequency vs drain current v bus =600v d=50% r g =25 ? t j =1 50 c t c =75 c downloaded from: http:///
APTMC60TLM55CT3AG APTMC60TLM55CT3AG C rev 2 july, 2013 www.microsemi.com 5-8 t j =25c t j =150c 0 20 40 60 80 012345678 i d , drain current (a) v ds , drain to source voltage (v) output characteristics v gs =20v v gs =20v 10v 0 10 20 30 40 50 60 02468 i d , drain current (a) v ds , drain to source voltage (v) output characteristics t j =1 50 c 0.75 1 1.25 1.5 1.75 2 25 50 75 100 125 150 t j , junction temperature (c) normalized r ds(on) vs. temperature r dson , drain to source on resistance v gs =20v i d =40a t j =25c t j =150c 0 10 20 30 40 50 2468101214 i d , drain current (a) v gs , gate to source voltage (v) transfert characteristics 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration (seconds) maximum effective transient thermal impedance, junction to case vs pul se duration eon eoff 0.0 0.4 0.8 1.2 1.6 2.0 0 1020304050607080 switching energy (mj) drain current (a) inductive switching energy vs current v gs =-5/20v r g = 25 ? v bus = 600v t j = 150 c eon eoff 0.0 0.2 0.4 0.6 0.8 1.0 1.2 25 37.5 50 62.5 75 switching energy (mj) gate resistance (ohms) inductive switching energy vs rg v gs =-5/20v i d = 40a v bus = 600v t j = 150 c downloaded from: http:///
APTMC60TLM55CT3AG APTMC60TLM55CT3AG C rev 2 july, 2013 www.microsemi.com 6-8 cr5 & cr6 typical performance curve d = 0.9 0.7 0.5 0.3 0.1 0.05 sin g le pulse 0 0.2 0.4 0.6 0.8 1 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration (seconds) maximum effective transient thermal impedance, junction to case vs pulse dur ation t j =25c t j =75c t j =125c t j =175c 0 10 20 30 40 50 60 00.511.522.533.5 i f forward current (a) v f forward voltage (v) forward characteristics t j =25c t j =75c t j =125c t j =175c 0 100 200 300 400 500 600 200 300 400 500 600 700 800 i r reverse current (a) v r reverse voltage (v) reverse characteristics 0 200 400 600 800 1000 1200 1 10 100 1000 c, capacitance (pf) v r reverse voltage capacitance vs.reverse voltage downloaded from: http:///
APTMC60TLM55CT3AG APTMC60TLM55CT3AG C rev 2 july, 2013 www.microsemi.com 7-8 cr7 & cr8 typical performance curve d = 0.9 0.7 0.5 0.3 0.1 0.05 sin g le pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration (seconds) maximum effective transient thermal impedance, junction to case vs pulse dur ation t j =25c t j =75c t j =125c t j =175c 0 10 20 30 40 50 60 00.511.522.533.5 i f forward current (a) v f forward voltage (v) forward characteristics t j =25c t j =75c t j =125c t j =175c 0 75 150 225 300 400 600 800 1000 1200 1400 1600 i r reverse current (a) v r reverse voltage (v) reverse characteristics 0 300 600 900 1200 1500 1800 2100 1 10 100 1000 c, capacitance (pf) v r reverse voltage capacitance vs.reverse voltage downloaded from: http:///
APTMC60TLM55CT3AG APTMC60TLM55CT3AG C rev 2 july, 2013 www.microsemi.com 8-8 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the terms of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with life- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or custo mers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclaim s any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
|
