2011-10-13 1 bcp54...-bcp56... npn silicon af transistors ? for af driver and output stages ? high collector current ? low collector-emitter saturation voltage ? complementary types: bcp51...bcp53 (pnp) ? pb-free (rohs compliant) package ? qualified according aec q101 type marking pin configuration package bcp54 bcp54-16 bcp55 bcp55-16 bcp56-10 bcp56-16 * * * * * * 1=b 1=b 1=b 1=b 1=b 1=b 2=c 2=c 2=c 2=c 2=c 2=c 3=e 3=e 3=e 3=e 3=e 3=e 4=c 4=c 4=c 4=c 4=c 4=c - - - - - - - - - - - - sot223 sot223 sot223 sot223 sot223 sot223 * marking is the same as the type-name
2011-10-13 2 bcp54...-bcp56... maximum ratings parameter symbol value unit collector-emitter voltage bcp54 bcp55 bcp56 v ceo 45 60 80 v collector-base voltage bcp54 bcp55 bcp56 v cbo 45 60 100 emitter-base voltage v ebo 5 collector current i c 1 a peak collector current, t p 10 ms i cm 1.5 base current i b 100 ma peak base current i bm 200 total power dissipation- t s 120c p tot 2 w junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 1) r thjs 15 k/w 1 for calculation of r thja please refer to application note an077 (thermal resistance calculation)
2011-10-13 3 bcp54...-bcp56... electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 10 ma, i b = 0 , bcp54... i c = 10 ma, i b = 0 , bcp55... i c = 10 ma, i b = 0 , bcp56-10, -16 v (br)ceo 45 60 80 - - - - - - v collector-base breakdown voltage i c = 100 a, i e = 0 , bcp54... i c = 100 a, i e = 0 , bcp55... i c = 100 a, i e = 0 , bcp56-10, -16 v (br)cbo 45 60 100 - - - - - - emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo 5 - - collector-base cutoff current v cb = 30 v, i e = 0 v cb = 30 v, i e = 0 , t a = 150 c i cbo - - - - 0.1 20 a dc current gain 1) i c = 5 ma, v ce = 2 v i c = 150 ma, v ce = 2 v, bcp54/bcp55 i c = 150 ma, v ce = 2 v, bcp56-10 i c = 150 ma, v ce = 2 v, bcp54-16...bcp56-16 i c = 500 ma, v ce = 2 v h fe 25 40 63 100 25 - - 100 160 - - 250 160 250 - - collector-emitter saturation voltage 1) i c = 500 ma, i b = 50 ma v cesat - - 0.5 v base-emitter voltage 1) i c = 500 ma, v ce = 2 v v be(on) - - 1 ac characteristics transition frequency i c = 50 ma, v ce = 10 v, f = 100 mhz f t - 100 - mhz 1 pulse test: t < 300s; d < 2%
2011-10-13 4 bcp54...-bcp56... dc current gain h fe = ? ( i c ) v ce = 2 v ehp00268 bcp 54...56 3 10 ma 0 10 3 10 5 5 10 0 10 1 10 1 c fe h 2 10 2 10 c 100 5 25 c -50 c 10 4 collector-emitter saturation voltage i c = ? ( v cesat ), h fe = 10 0 ehp00271 bcp 54...56 cesat v 0.4 v 0.8 10 0 10 1 3 10 c ma c 2 10 0.2 0.6 10 4 100 25 c c -50 base-emitter saturation voltage i c = ? ( v besat ), h fe = 10 0 10 ehp00270 bcp 54...56 besat v 0 4 10 c ma 0.2 1 10 2 10 3 10 0.4 0.6 0.8 1.2 v c 100 25 c -50 c collector cutoff current i cbo = ? ( t a ) v cbo = 30 v 0 10 ehp00269 bcp 54...56 a t 150 -1 4 10 cbo na 50 100 0 10 1 10 3 10 c 10 2 max typ
2011-10-13 5 bcp54...-bcp56... transition frequency f t = ? ( i c ) v ce = 10 v 10 ehp00267 bcp 54...56 03 10 ma 1 10 3 10 5 5 10 1 10 2 10 2 c t f mhz 55 total power dissipation p tot = ? ( t s ) 0 15 30 45 60 75 90 105 120 c 150 t s 0 0.4 0.8 1.2 1.6 w 2.4 p tot permissible pulse load p totmax / p totdc = ? ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 permissible pulse load r thjs = ? ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 r thjs d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0
2011-10-13 6 bcp54...-bcp56... package sot223 package outline foot print marking layout (example) packing reel ?180 mm = 1.000 pieces/reel reel ?330 mm = 4.000 pieces/reel 2005, 24 cw date code (yyww) bcp52-16 type code pin 1 12 3 3 4 0.1 0.0 4 0.5 min. 0.28 0.1 max. 15? max. 6.5 0.2 a 4.6 2.3 0.7 0.1 0.25 m a 1.6 0.1 7 0.3 b 0.25 m 0.2 3.5 b 3.5 1.4 4.8 1.4 1.1 1.2 8 0.3 max. 6.8 7.55 12 1.75 pin 1 manufacturer 0...10?
2011-10-13 7 bcp54...-bcp56... edition 2009-11-16 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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