![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
RGTH40TK65 650v 20a field stop trench igbt *1 pulse width limited by t jmax. operating junction temperature t j - 40 to +175 c storage temperature t stg - 55 to +175 c power dissipation t c = 25c p d 56 w t c = 100c p d 28 w 80 a pulsed collector current i cp *1 l outline v ces 650v to-3pfm i c(100c) 14a v ce(sat) (typ.) 1.6v @i c =20a p d 56w l features l inner circuit 1) low collector - emitter saturation voltage 2) high speed switching 3) low switching loss & soft switching 4) pb - free lead plating ; rohs compliant l packaging specifications l applications type packaging tube pfc reel size (mm) - ups tape width (mm) - power conditioner basic ordering unit (pcs) 450 ih packing code c11 marking RGTH40TK65 l absolute maximum ratings (at t c = 25c unless otherwise specified) parameter symbol value unit collector - emitter voltage v ces 650 v gate - emitter voltage v ges ? 30 v collector current t c = 25c i c 23 a t c = 100c i c 14 a (1) gate (2) collector (3) emitter (1) (2) (3) (1) (2) (3) 1/9 2016.01 - rev.a data sheet www.rohm.com ? 2016 rohm co., ltd. all rights reserved.
RGTH40TK65 l thermal resistance l igbt electrical characteristics (at t j = 25c unless otherwise specified) v t j = 25c - 1.6 2.1 t j = 175c - 2.1 - v ce(sat) i c = 20a, v ge = 15v - ? 200 na gate - emitter threshold voltage v ge(th) v ce = 5v, i c = 13.3ma 4.5 5.5 6.5 v gate - emitter leakage current i ges v ge = ? 30v, v ce = 0v - - - v collector cut - off current i ces v ce = 650v, v ge = 0v - - 10 a collector - emitter breakdown voltage bv ces i c = 10a, v ge = 0v 650 conditions values unit min. typ. max. collector - emitter saturation voltage unit min. typ. max. thermal resistance igbt junction - case r (j-c) - - 2.64 c/w parameter symbol values parameter symbol 2/9 2016.01 - rev.a www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet RGTH40TK65 l igbt electrical characteristics (at t j = 25c unless otherwise specified) reverse bias safe operating area rbsoa i c = 80a, v cc = 520v full square - v p = 650v, v ge = 15v r g = 60, t j = 175c - 83 - fall time t f inductive load - 58 - ns rise time t r v ge = 15v, r g = 10 - 25 - turn - off delay time t d(off) t j = 175c turn - on delay time t d(on) i c = 20a, v cc = 400v - 22 - - 73 - fall time t f inductive load - 48 - turn - on delay time t d(on) i c = 20a, v cc = 400v - 22 - ns rise time t r v ge = 15v, r g = 10 - 25 - turn - off delay time t d(off) t j = 25c nc gate - emitter charge q ge i c = 20a - 9 - gate - collector charge q gc v ge = 15v - 15 - - 18 - total gate charge q g v ce = 300v - 40 - parameter symbol conditions values unit min. typ. max. pf output capacitance c oes v ge = 0v - 47 - reverse transfer capacitance c res f = 1mhz input capacitance c ies v ce = 30v - 1060 - 3/9 2016.01 - rev.a www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet RGTH40TK65 l electrical characteristic curves fig.2 collector current vs. case temperature collector current : i c [a] case temperature : t c [oc] fig.3 forward bias safe operating area collector current : i c [a] collector to emitter voltage : v ce [v] fig.4 reverse bias safe operating area collector current : i c [a] collector to emitter voltage : v ce [v] fig.1 power dissipation vs. case temperature power dissipation : p d [w] case temperature : t c [oc] 0 10 20 30 40 50 60 70 0 25 50 75 100 125 150 175 0 20 40 60 80 100 120 0 200 400 600 800 t j Q 175oc v ge =15v 0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 t j Q 175oc v ge R 15v 0.01 0.1 1 10 100 1000 1 10 100 1000 t c = 25oc single pulse 10 s 100 s 4/9 2016.01 - rev.a www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet RGTH40TK65 l electrical characteristic curves fig.5 typical output characteristics collector current : i c [a] collector to emitter voltage : v ce [v] fig.6 typical output characteristics collector current : i c [a] collector to emitter voltage : v ce [v] fig.7 typical transfer characteristics collector current : i c [a] gate to emitter voltage : v ge [v] fig.8 typical collector to emitter saturation voltage vs. junction temperature collector to emitter saturation voltage : v ce(sat) [v] junction temperature : t j [oc] 0 20 40 60 80 0 1 2 3 4 5 t j = 175oc v ge = 20v v ge = 12v v ge = 10v v ge = 8v v ge = 15v 0 20 40 60 80 0 1 2 3 4 5 t j = 25oc v ge = 20v v ge = 15v v ge = 12v v ge = 10v v ge = 8v 0 10 20 30 40 0 2 4 6 8 10 12 v ce = 10v t j = 25oc t j = 175oc 0 1 2 3 4 25 50 75 100 125 150 175 i c = 40a i c = 10a i c = 20a v ge = 15v 5/9 2016.01 - rev.a www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet RGTH40TK65 l electrical characteristic curves collector to emitter saturation voltage : v ce(sat) [v] gate to emitter voltage : v ge [v] collector to emitter saturation voltage : v ce(sat) [v] gate to emitter voltage : v ge [v] switching time [ns] collector current : i c [a] fig.12 typical switching time vs. gate resistance switching time [ns] gate resistance : r g [ ] fig.9 typical collector to emitter saturation voltage vs. gate to emitter voltage fig.10 typical collector to emitter saturation voltage vs. gate to emitter voltage fig.11 typical switching time vs. collector current 0 5 10 15 20 5 10 15 20 t j = 25oc i c = 40a i c = 10a i c = 20a 0 5 10 15 20 5 10 15 20 t j = 175oc i c = 40a i c = 10a i c = 20a 10 100 1000 0 10 20 30 40 t f v cc =400v, v ge =15v r g =10 , t j =175oc inductive oad t d(off) t d(on) t r 10 100 1000 0 10 20 30 40 50 t f t d(off) t d(on) t r v cc =400v, i c =20a v ge =15v , t j =175oc inductive oad 6/9 2016.01 - rev.a www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet RGTH40TK65 l electrical characteristic curves fig.13 typical switching energy losses vs. collector current switching energy losses [mj] collector current : i c [a] fig.14 typical switching energy losses vs. gate resistance switching energy losses [mj] gate resistance : r g [ ] fig.15 typical capacitance vs. collector to emitter voltage capacitance [pf] collector to emitter voltage : v ce [v] fig.16 typical gate charge gate to emitter voltage : v ge [v] gate charge : q g [nc] 0.01 0.1 1 10 0 10 20 30 40 e off v cc =400v, v ge =15v r g =10 , t j =175oc inductive oad e on 1 10 100 1000 10000 0.01 0.1 1 10 100 cies f=1mhz v ge =0v t j =25oc coes cres 0.01 0.1 1 10 0 10 20 30 40 50 e off e on v cc =400v, i c =20a v ge =15v , t j =175oc inductive oad 0 5 10 15 0 10 20 30 40 v cc =300v i c =20a t j =25oc 7/9 2016.01 - rev.a www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet RGTH40TK65 l electrical characteristic curves 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 d= 0.5 0.2 0.1 0.01 0.02 0.05 single pulse fig.17 igbt transient thermal impedance transient thermal impedance : z thjc [oc/w] pulse width : t1[s] t1 t2 p dm duty=t1/t2 peak t j =p dm z thjc + t c 8/9 2016.01 - rev.a www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet RGTH40TK65 l inductive load switching circuit and waveform t r t off 10% 90% t f t d(on) t d(off) gate drive time v ce(sat) 10% 90% t on v ge i c v ce e on 10% e o ff vg d.u.t. fig.18 inductive load circuit fig.19 inductive load waveform 9/9 2016.01 - rev.a www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet r1 102 a www .rohm.com ? 2016 rohm co., ltd. all rights reserved. notice rohm c u stomer support sys tem h ttp://w w w . r ohm .com/con tact/ thank you for your accessing to rohm pr oduct informations. mor e detail pr oduct informations and catalogs ar e available, please contact us. notes the inf or mation contained herein is subject to change without notic e . bef ore y ou use our p r o d u c t s , ple a s e c o n t a c t o u r s a l e s r e p r e s e n t a t i v e and v e r i f y the l a test specifica- tions : althoug h r o h m is c o n t i n uousl y w o r king t o impro ve p roduct r elia bility and quality , semicon- duc tors c an brea k do w n and mal f unction due to va r ious f actor s . the ref o r e , i n ord e r to p r e ve n t per sonal i n jur y or fire a r isin g f rom f a ilure , please tak e saf ety meas ure s suc h a s c o m plying wit h the der ating cha r a cte r istics , imple menting redundant and f ire p r e ve nti o n d e s i g n s , and u tilizing bac k ups a nd f ail- saf e p rocedures . r o hm shall h a ve no responsibility f or an y damages ar ising out of the use of our p oducts beyond the r ating specified b y r ohm. examples of application circuits , circuit constants and an y other inf or mation contained herein are pro vided only to illustr ate the standard usage and oper ations of the products . the per iphe r al conditions m ust be tak en into account when designing circuits f or mass production. the technical inf or mation specified herein is intended only to sho w the typical functions of and e xamples of application circuits f or the products . r ohm does not grant y ou, e xplicitly or implicitl y , an y license to use or e x ercise intellectual prope r ty or other r ights held b y r ohm or an y other par ties . r ohm shall ha v e no responsibility whatsoe v er f or an y dispute ar ising out of the use of such technical in f or mation. the products are intended f or use in gene r al electronic equipment (i.e . a v/o a de vices , comm uni- cation, consumer systems , gaming/ente r tainment sets) as w ell as the applications indicated in this document. the products specified in this document are not designed to be r adiation tole r ant. f or use of our products in applications requi r ing a high deg ree of reliability (as exemplified bel o w), please contact and consult with a r ohm representati v e : tr anspo r tation equipment (i.e . cars , ships , tr ains), pr imar y comm unication equipment, tr affic lights , fire/cr ime pre v ention, saf ety equipment, medical system s , ser v ers , solar cells , and po w er tr ansmission system s . do not use our products in applications requir ing e xtremely high reliabilit y , such as aerospace equipment, n uclear p o w er control systems , and submar ine repeater s . r ohm shall ha v e no responsibility f or an y damages or inju r y ar ising from non-compliance with the recommended usage conditions and specifications contained herein. r ohm has used reasona b le care to ensur the accur acy of the inf or mation contained in this document . ho w e v er , r ohm does not w arr ants that such inf or mation is error-free , and r ohm shall ha v e no responsibility f or an y damages ar ising from an y inaccu r acy or mispr int of such inf or mation. please use the products in accordance with an y applica b le en vironmental la ws and regulation s , such as the rohs directiv e . f or more details , including rohs compatibilit y , please contact a r ohm sales office . r ohm shall ha v e no responsibility f or an y damages or losses resulting non-compliance with a n y applica b le la ws or regulation s . when pro viding our products and technologies contained in this document to other countr ies , y ou m ust abide b y the procedures and pro visions stipulated in all applica b le e xpor t la ws and regulation s , including without limitation the us expor t administr ation regulations and the f oreign exchange and f oreign t r ade act. this document, in par t or in whol e , ma y not be repr inted or reproduced without pr ior consent of r ohm. 1) 2) 3) 4) 5) 6) 7) 8) 9) 10) 11) 12) 13) 14) datasheet part number RGTH40TK65 package to-3pfm unit quantity 450 minimum package quantity 450 packing type tube constitution materials list inquiry rohs yes RGTH40TK65 - web page |
Price & Availability of RGTH40TK65
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |