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RGT8NS65D 650v 4a field stop trench igbt *1 pulse width limited by t jmax. collector current t c = 25c i c 8 a t c = 100c i c 4 a collector - emitter voltage v ces 650 v gate - emitter voltage v ges ? 30 v l absolute maximum ratings (at t c = 25c unless otherwise specified) parameter symbol value unit welder taping code tl marking RGT8NS65D 5) pb - free lead plating ; rohs compliant l packaging specifications l applications type packaging taping general inverter reel size (mm) 330 ups tape width (mm) 24 power conditioner basic ordering unit (pcs) 1,000 l features l inner circuit 1) low collector - emitter saturation voltage 2) low switching loss 3) short circuit withstand time 5s 4) built in very fast & soft recovery frd (rfn - series) l outline v ces 650v lpds (to-263s) i c(100c) 4a v ce(sat) (typ.) 1.65v p d 65w 12 a diode forward current t c = 25c i f 7 a t c = 100c i f 4 a pulsed collector current i cp *1 diode pulsed forward current i fp *1 12 a power dissipation t c = 25c p d 65 w t c = 100c p d 32 w operating junction temperature t j - 40 to +175 c storage temperature t stg - 55 to +175 c (1) (2) (3) (1) gate (2) collector (3) emitter *1 *1 built in frd (1) (2) (3) 1/11 2014.05 - rev.a data sheet www.rohm.com ? 2014 rohm co., ltd. all rights reserved.
RGT8NS65D l thermal resistance l igbt electrical characteristics (at t j = 25c unless otherwise specified) collector - emitter saturation voltage unit min. typ. max. thermal resistance igbt junction - case r (j-c) - - 2.30 c/w parameter symbol values c/w parameter symbol conditions values unit min. typ. max. thermal resistance diode junction - case r (j-c) - - 8.70 - - v collector cut - off current i ces v ce = 650v, v ge = 0v - - 10 a collector - emitter breakdown voltage bv ces i c = 10a, v ge = 0v 650 - ? 200 na gate - emitter threshold voltage v ge(th) v ce = 5v, i c = 2.8ma 5.0 6.0 7.0 v gate - emitter leakage current i ges v ge = ? 30v, v ce = 0v - v ce(sat) i c = 4a, v ge = 15v v t j = 25c - 1.65 2.1 t j = 175c - 2.1 - 2/11 2014.05 - rev.a www.rohm.com ? 2014 rohm co., ltd. all rights reserved. data sheet RGT8NS65D l igbt electrical characteristics (at t j = 25c unless otherwise specified) parameter symbol conditions values unit min. typ. max. pf output capacitance c oes v ge = 0v - 14 - reverse transfer capacitance c res f = 1mhz input capacitance c ies v ce = 30v - 220 - - 4.5 - total gate charge q g v ce = 400v - 13.5 - nc gate - emitter charge q ge i c = 4a - 4 - gate - collector charge q gc v ge = 15v - 5.5 - turn - on delay time t d(on) i c = 4a, v cc = 400v - 17 - ns rise time t r v ge = 15v, r g = 50 - 36 - turn - off delay time t d(off) t j = 25c t d(off) t j = 175c turn - on delay time t d(on) i c = 4a, v cc = 400v - 17 - - 69 - fall time t f inductive load - 71 - reverse bias safe operating area rbsoa i c = 12a, v cc = 520v full square - v p = 650v, v ge = 15v r g = 50, t j = 175c - 86 - fall time t f inductive load - 72 - ns rise time t r v ge = 15v, r g = 50 - 37 - turn - off delay time s v ge = 15v t j = 25c short circuit withstand time t sc v cc Q 360v 5 - - 3/11 2014.05 - rev.a www.rohm.com ? 2014 rohm co., ltd. all rights reserved. data sheet RGT8NS65D l frd electrical characteristics (at t j = 25c unless otherwise specified) unit min. typ. max. diode forward voltage v f i f = 4a parameter symbol conditions values v t j = 25c - 1.45 1.9 t j = 175c - 1.4 - ns i f = 4a diode peak reverse recovery current i rr v cc = 400v - 4.3 - a di f /dt = 200a/s diode reverse recovery time t rr - 40 - c diode reverse recovery time t rr - 94 - ns i f = 4a diode reverse recovery charge q rr t j = 25c - 0.09 - a di f /dt = 200a/s diode reverse recovery charge q rr t j = 175c - 0.27 - c diode peak reverse recovery current i rr v cc = 400v - 5.4 - 4/11 2014.05 - rev.a www.rohm.com ? 2014 rohm co., ltd. all rights reserved. data sheet RGT8NS65D l electrical characteristic curves fig.2 collector current vs. case temperature collector current : i c [a] case temperature : tc [oc] fig.3 forward bias safe operating area collector current : i c [a] collector to emitter voltage : v ce [v] fig.4 reverse bias safe operating area collector current : i c [a] collector to emitter voltage : v ce [v] fig.1 power dissipation vs. case temperature power dissipation : p d [w] case temperature : tc [oc] 0 10 20 30 40 50 60 70 80 0 25 50 75 100 125 150 175 0 2 4 6 8 10 12 14 16 0 200 400 600 800 t j Q 175oc v ge =15v 0 2 4 6 8 10 0 25 50 75 100 125 150 175 t j Q 175 v ge R 15v t j Q 175oc v ge R 15v 0.01 0.1 1 10 100 1 10 100 1000 t c = 25oc single pulse 10 s 100 s 5/11 2014.05 - rev.a www.rohm.com ? 2014 rohm co., ltd. all rights reserved. data sheet RGT8NS65D l electrical characteristic curves fig.5 typical output characteristics collector current : i c [a] collector to emitter voltage : v ce [v] fig.6 typical output characteristics collector current : i c [a] collector to emitter voltage : v ce [v] fig.7 typical transfer characteristics collector current : i c [a] gate to emitter voltage : v ge [v] fig.8 typical collector to emitter saturation voltage vs. junction temperature collector to emitter saturation voltage : v ce(sat) [v] junction temperature : t j [oc] 0 2 4 6 8 10 12 0 1 2 3 4 5 t j = 175oc v ge = 20v v ge = 15v v ge = 12v v ge = 10v 0 2 4 6 8 10 12 0 1 2 3 4 5 t j = 25oc v ge = 20v v ge = 15v v ge = 12v v ge = 10v 0 1 2 3 4 5 6 7 8 0 2 4 6 8 10 12 v ce = 10v t j = 25oc t j = 175oc 0 1 2 3 4 25 50 75 100 125 150 175 i c = 8a i c = 2a i c = 4a v ge = 15v 6/11 2014.05 - rev.a www.rohm.com ? 2014 rohm co., ltd. all rights reserved. data sheet RGT8NS65D l electrical characteristic curves fig.9 typical collector to emitter saturation voltage vs. gate to emitter voltage collector to emitter saturation voltage : v ce(sat) [v] gate to emitter voltage : v ge [v] fig.10 typical collector to emitter saturation voltage vs. gate to emitter voltage collector to emitter saturation voltage : v ce(sat) [v] gate to emitter voltage : v ge [v] fig.11 typical switching time vs. collector current switching time [ns] collector current : i c [a] fig.12 typical switching time vs. gate resistance switching time [ns] gate resistance : r g [ ] 0 5 10 15 20 5 10 15 20 i c =8a t j = 25oc i c = 8a i c = 2a i c = 4a 0 5 10 15 20 5 10 15 20 t j = 175oc i c = 8a i c = 2a i c = 4a 1 10 100 1000 0 2 4 6 8 10 t f v cc =400v, v ge =15v r g =50 , t j =175oc inductive oad t d(off) t d(on) t r 1 10 100 1000 0 10 20 30 40 50 t f t d(off) v cc =400v, i c =4a v ge =15v , t j =175oc inductive oad t d(on) t r 7/11 2014.05 - rev.a www.rohm.com ? 2014 rohm co., ltd. all rights reserved. data sheet RGT8NS65D l electrical characteristic curves fig.13 typical switching energy losses vs. collector current switching energy losses [mj] collector current : i c [a] fig.14 typical switching energy losses vs. gate resistance switching energy losses [mj] gate resistance : r g [ ] fig.15 typical capacitance vs. collector to emitter voltage capacitance [pf] collector to emitter voltage : v ce [v] fig.16 typical gate charge gate to emitter voltage : v ge [v] gate charge : q g [nc] 0.01 0.1 1 10 0 2 4 6 8 10 e off v cc =400v, v ge =15v r g =50 , t j =175oc inductive oad e on 1 10 100 1000 10000 0.01 0.1 1 10 100 cies f=1mhz v ge =0v t j =25oc coes cres 0.01 0.1 1 10 0 10 20 30 40 50 e off e on v cc =400v, i c =4a v ge =15v , t j =175oc inductive oad 0 5 10 15 0 5 10 15 v cc =400v i c =4a t j =25oc 8/11 2014.05 - rev.a www.rohm.com ? 2014 rohm co., ltd. all rights reserved. data sheet RGT8NS65D l electrical characteristic curves 0 2 4 6 8 10 12 0 0.5 1 1.5 2 2.5 3 t j = 175oc t j = 25oc 0 20 40 60 80 100 120 0 2 4 6 8 10 v cc =400v di f /dt=200a/s inductive oad t j = 175oc t j = 25oc fig.17 typical diode forward current vs. forward voltage forward current : i f [a] forward voltage : v f [v] fig.18 typical diode reverse recovery time vs. forward current reverse recovery time : t rr [ns] forward current : i f [a] fig.19 typical diode reverse recovery current vs. forward current reverse recovery current : i rr [a] forward current : i f [a] fig.20 typical diode reverse recovery charge vs. forward current reverse recovery charge : q rr [c] forward current : i f [a] 0 2 4 6 8 10 0 2 4 6 8 10 t j = 175oc t j = 25oc v cc =400v di f /dt=200a/s inductive oad 0 0.1 0.2 0.3 0.4 0.5 0 2 4 6 8 10 t j = 175oc t j = 25oc v cc =400v di f /dt=200a/s inductive oad 9/11 2014.05 - rev.a www.rohm.com ? 2014 rohm co., ltd. all rights reserved. data sheet RGT8NS65D l electrical characteristic curves 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 d= 0.5 0.2 0.1 0.01 0.02 0.05 single pulse 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 d= 0.5 0.2 0.1 0.01 0.02 0.05 single pulse fig.21 igbt transient thermal impedance transient thermal impedance : z thjc [oc/w] pulse width : t1[s] fig.22 diode transient thermal impedance transient thermal impedance : z thjc [oc/w] pulse width : t1[s] t1 t2 p dm duty=t1/t2 peak t j =p dm z thjc + t c t1 t2 p dm duty=t1/t2 peak t j =p dm z thjc + t c 10/11 2014.05 - rev.a www.rohm.com ? 2014 rohm co., ltd. all rights reserved. data sheet RGT8NS65D l inductive load switching circuit and waveform vg d.u.t. d.u.t. fig.23 inductive load circuit i f di f /dt i rr t rr , q rr fig.25 diode reverce recovery waveform gate drive time t off t f t d(off) t d(on) t r 10% 90% v ce(sat) 10% 90% t on v ge i c v ce fig.24 inductive load waveform 11/11 2014.05 - rev.a www.rohm.com ? 2014 rohm co., ltd. all rights reserved. data sheet r1 102 a www .rohm.com ? 2014 rohm co., ltd. all rights reserved. notice rohm c u stomer support sys tem h ttp://w w w . r ohm .com/con tact/ thank you for your accessing to rohm pr oduct informations. mor e detail pr oduct informations and catalogs ar e available, please contact us. notes the inf or mation contained herein is subject to change without notic e . bef ore y ou use our p r o d u c t s , ple a s e c o n t a c t o u r s a l e s r e p r e s e n t a t i v e and v e r i f y the l a test specifica- tions : althoug h r o h m is c o n t i n uousl y w o r king t o impro ve p roduct r elia bility and quality , semicon- duc tors c an brea k do w n and mal f unction due to va r ious f actor s . the ref o r e , i n ord e r to p r e ve n t per sonal i n jur y or fire a r isin g f rom f a ilure , please tak e saf ety meas ure s suc h a s c o m plying wit h the der ating cha r a cte r istics , imple menting redundant and f ire p r e ve nti o n d e s i g n s , and u tilizing bac k ups a nd f ail- saf e p rocedures . r o hm shall h a ve no responsibility f or an y damages ar ising out of the use of our p oducts beyond the r ating specified b y r ohm. examples of application circuits , circuit constants and an y other inf or mation contained herein are pro vided only to illustr ate the standard usage and oper ations of the products . the per iphe r al conditions m ust be tak en into account when designing circuits f or mass production. the technical inf or mation specified herein is intended only to sho w the typical functions of and e xamples of application circuits f or the products . r ohm does not grant y ou, e xplicitly or implicitl y , an y license to use or e x ercise intellectual prope r ty or other r ights held b y r ohm or an y other par ties . r ohm shall ha v e no responsibility whatsoe v er f or an y dispute ar ising out of the use of such technical in f or mation. the products are intended f or use in gene r al electronic equipment (i.e . a v/o a de vices , comm uni- cation, consumer systems , gaming/ente r tainment sets) as w ell as the applications indicated in this document. the products specified in this document are not designed to be r adiation tole r ant. f or use of our products in applications requi r ing a high deg ree of reliability (as exemplified bel o w), please contact and consult with a r ohm representati v e : tr anspo r tation equipment (i.e . cars , ships , tr ains), pr imar y comm unication equipment, tr affic lights , fire/cr ime pre v ention, saf ety equipment, medical system s , ser v ers , solar cells , and po w er tr ansmission system s . do not use our products in applications requir ing e xtremely high reliabilit y , such as aerospace equipment, n uclear p o w er control systems , and submar ine repeater s . r ohm shall ha v e no responsibility f or an y damages or inju r y ar ising from non-compliance with the recommended usage conditions and specifications contained herein. r ohm has used reasona b le care to ensur the accur acy of the inf or mation contained in this document . ho w e v er , r ohm does not w arr ants that such inf or mation is error-free , and r ohm shall ha v e no responsibility f or an y damages ar ising from an y inaccu r acy or mispr int of such inf or mation. please use the products in accordance with an y applica b le en vironmental la ws and regulation s , such as the rohs directiv e . f or more details , including rohs compatibilit y , please contact a r ohm sales office . r ohm shall ha v e no responsibility f or an y damages or losses resulting non-compliance with a n y applica b le la ws or regulation s . when pro viding our products and technologies contained in this document to other countr ies , y ou m ust abide b y the procedures and pro visions stipulated in all applica b le e xpor t la ws and regulation s , including without limitation the us expor t administr ation regulations and the f oreign exchange and f oreign t r ade act. this document, in par t or in whol e , ma y not be repr inted or reproduced without pr ior consent of r ohm. 1) 2) 3) 4) 5) 6) 7) 8) 9) 10) 11) 12) 13) 14) |
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