61312 tkim/31412 tkim/22212pa tkim tc-00002682 no.8994-1/7 http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 FW217A n-channel power mosfet 35v, 6a, 39m , dual soic8 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? on-state resistance r ds (on)1=30m (typ.) ? 4.5v drive ? halogen free compliance ? protection diode in speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 35 v gate-to-source voltage v gss 20 v drain current (dc) i d 6a drain current (pw 10s) i dp duty cycle 1% 6.5 a drain current (pw 10 s) i dp duty cycle 1% 24 a allowable power dissipation p d when mounted on ceramic substrate (2000mm 2 0.8mm) 1unit, pw 10s 1.8 w total dissipation p t when mounted on ceramic substrate (2000mm 2 0.8mm), pw 10s 2.2 w channel temperature tch 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7072-001 ordering number : en8994b product & package information ? package : soic8 ? jeita, jedec : sc-87, sot-96 ? minimum packing quantity : 2,500 pcs./reel packing type : tl marking electrical connection fw217 lot no. a 8765 1234 4.9 0.22 6.0 3.9 1.375 14 5 8 0.445 1.27 0.715 0.375 1.55 0.175 0.254 (gage plane) 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 soic8 tl FW217A-tl-2w
FW217A no.8994-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 35 v zero-gate voltage drain current i dss v ds =35v, v gs =0v 1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.7 2.6 v forward transfer admittance | yfs | v ds =10v, i d =6a 3 s static drain-to-source on-state resistance r ds (on)1 i d =6a, v gs =10v 30 39 m r ds (on)2 i d =3a, v gs =4.5v 50 70 m input capacitance ciss v ds =20v, f=1mhz 470 pf output capacitance coss 70 pf reverse transfer capacitance crss 35 pf turn-on delay time t d (on) see speci ed test circuit. 8ns rise time t r 34 ns turn-off delay time t d (off) 31 ns fall time t f 30 ns total gate charge qg v ds =20v, v gs =10v, i d =6a 10 nc gate-to-source charge qgs 2nc gate-to-drain ?miller? charge qgd 2nc diode forward voltage v sd i s =6a, v gs =0v 0.84 1.2 v switching time test circuit ordering information device package shipping memo FW217A-tl-2w soic8 2,500pcs./reel pb free and halogen free pw=10 s d.c. 1% p. g 50 g s d i d =6a r l =3 v dd =20v v out v in 10v 0v v in FW217A
FW217A no.8994-3/7 it16778 it16779 05 0 0 6 2 1 4 3 5 1.0 0.2 0.3 0.4 0.1 0.5 0.6 0.7 0.8 0.9 0 10 4 123 6 1 2 3 8 4 7 9 5 10.0v 3.5v v gs =2.5v -- 2 5 c 25 c ta= 75 c v ds =10v 16.0v 4.5v 6.0v 3.0v 4.0v i d -- v gs drain current, i d -- a gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m ambient temperature, ta -- c r ds (on) -- ta r ds (on) -- v gs i s -- v sd diode forward voltage, v sd -- v ciss, coss, crss -- v ds ciss, coss, crss -- pf drain-to-source voltage, v ds -- v drain current, i d -- a | y fs | -- i d forward transfer admittance, | y fs | -- s sw time -- i d switching time, sw time -- ns drain current, i d -- a 0 5 10 7 5 3 2 100 1000 7 3 2 35 25 30 15 520 10 it16785 it16784 it16783 0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 7 5 3 2 2 1.0 7 5 3 2 it16784 25 c --25 c f=1mhz ciss coss crss ta=75 c 0.01 0.1 2 23 57 1.0 2 357 2 3 5 7 2 0.1 1.0 3 5 7 10 v ds =10v ta= --25 c 75 c v gs =0v 10 1.0 3 3 2 2 5 7 100 5 7 0.1 1.0 2 23 57 10 357 v dd =20v t d (off) t f t d (on) t r it16780 it16781 0 0 100 16 2610 4 8 12 14 --60 --40 --20 0 20 40 60 80 100 120 140 160 40 80 60 20 0 100 60 80 40 20 v gs =4.5v, i d =3.0a ta=25 c i d =3a v gs =10.0v, i d =6.0a 6a 10 357 25 c 10 7 5 3
FW217A no.8994-4/7 total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v a s o drain-to-source voltage, v ds -- v drain current, i d -- a it16786 0 0 1 2 3 4 5 6 7 10 8 10 8 9 46 2 it16787 v ds =10v i d =4.5a 0.01 0.1 1.0 10 23 57 23 57 23 57 23 5 100 7 0.01 0.1 1.0 10 100 7 5 7 5 3 2 7 5 3 2 7 5 3 2 3 2 i d =6a 100ms 1ms 10ms 100 s operation in this area is limited by r ds (on). dc operation i dp =24a(pw 10 s) 10s ta=25 c single pulse 1unit when mounted on ceramic substrate (2000mm 2 0.8mm) it16790 it16789 0 25 50 75 100 125 150 175 0 0.6 0.2 0.4 0.8 1.0 1.4 1.2 2.2 2.0 1.6 1.8 2.4 0 0 0.4 0.8 0.2 0.6 0.4 1.2 1.0 1.2 1.0 0.8 0.2 0.6 1.4 1.8 1.6 1.4 1.8 1.6 2.4 2.2 2.0 2.4 2.2 2.0 ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w 1unit when mounted on ceramic substrate (2000mm 2 0.8mm) , pw 10s total dissipation allowable power dissipation(fet2), p d -- w p d (fet1) -- p d (fet2) allowable power dissipation(fet1), p d -- w when mounted on ceramic substrate (2000mm 2 0.8mm) , pw 10s taping speci cation FW217A-tl-2w 3 d f n l q j ) r u p d w 0 d [ l p x p 1 x p e h u r i g h y l f h v f r q w d l q h g s f v 3 d f n l q j i r u p d w 3 d f n d j h 1 d p h & d u u l h u 7 d s h 7 \ s h 5 h h o , q q h u e r [ 2 x w h u e r [ , q q h u % 2 ; : 2 x w h u % 2 ; : 6 2 , & % u h h o v f r q w d l q h g ' l p h q v l r q v p p h [ w h u q d o ? ? l q q h u e r [ h v f r q w d l q h g ' l p h q v l r q v p p h [ w h u q d o ? ? / d e h o - ( , 7 $ 3 k d v h / ( $ ' ) 5 ( ( - ( , 7 $ 3 k d v h 7 < 3 ( & 2 ' (
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FW217A no.8994-5/7 7 d s l q j f r q i l j x u d w l r q & d u u l h u w d s h v l ] h x q l w p p ' h y l f h s o d f h p h q w g l u h f w l r q 3 d f n l q j w \ s h????? 7 / / h d g h u s r u w l r q d q g w u d l o h u s r u w l r q x q l w p p? r u p r u h 7 u d l o h u s r u w l r q ' h y l f h p r x q w l q j s r u w l r q / h d g h u s r u w l r q r u p r u h , g o h s r u w l r q r u p r u h & r y h u w d s h / h d g h u s r u w l r q r u p r u h ' h y l f h p r x q w l q j s r u w l r q s s s ??? ??????? s s s s s s s feed d i rec t ion 5 h h o & d u u l h u 7 d s h 7 / 3 l q , q g h [ ) h h g 5 r x q g + r o h
FW217A no.8994-6/7 outline drawing land pattern example FW217A-tl-2w mass (g) unit 0.082 * for reference mm unit: mm 1.75 1.27 0.65 5.60
FW217A ps no.8994-7/7 note on usage : since the FW217A is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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