jiangsu changjiang electronics technology co., ltd sop8 plastic-encapsulate mosfets CJQ4438 n-channel mosfet maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current (note 1) i d 8.2 a pulsed drain current (note 2) i dm 40 a power dissipation p d 1.25 w thermal resistance from junction to ambient (note 1) r ja 100 /w junction temperature t j 150 storage temperature t stg -55~+150 sop8 marking equivalent circuit fea t ure z trenchfet power mosfet application z load switch z low r ds (on) z low gate charge z pwm applications v (br)dss r ds(on) max i d 6 0 v 22 m @10v 8.2 a 36 m @ 4 . 5v ? ? q44 38 yy q44 38 = device code solid dot=pin1 indicator solid dot = green molding compound device, if none, the normal device fr o nt side yy=date code q44 38 yy www.cj-elec.com 1 i , may ,201 5
parameter symbol te s t condition min typ max unit static pa r ameters drain-source br eakd own voltage v (br)dss v gs = 0v, i d =250a 60 v zero gate voltage dra i n current i dss v ds =60v,v gs = 0v 1 a gate-body leakage current i gss v gs =20v, v ds = 0v 100 na gate threshold voltage v gs(th) v ds =v gs , i d =250a 1 3 v v gs =10v, i d =8.2a 22 m ? drain-source on -resista nce (note 3) r ds(on) v gs =4.5v, i d =7.6a 36 m ? forwa r d tranconductance (note 3) g fs v ds =5v, i d =8.2a 10 s diode forwar d voltag e (note 3) v sd i s =1a, v gs = 0v 1 v dynamic p a rameters (note 4) input capacitance c iss 2300 pf output capacitance c oss 155 pf reverse transfer capacitanc e c rss v ds =30v,v gs =0v,f =1mhz 116 pf switching parameters (note 4) turn-on delay t i me t d(on) 8.2 ns turn-on rise time t r 5.5 ns turn-off delay ti me t d(off) 29.7 ns turn-off fall time t f v gs =10v,v ds =30v r l =3.6 ? ,r gen =3 ? 5.2 ns total gate charge (10v) 58 nc total gate charge (4.5v) q g 30 nc gate-source charge q gs 6 nc gate-drain charge q gd v ds =30v,v gs =10v,i d =8.2a 14.4 nc notes : 1. the value of r ja is measured with the device mounte d on 1 in 2 fr4 board wit h 2oz. copper, in a still air environment with t a =25 .the value in an y given application depends on the user?s specific board design. the current rating is based on the t 10s thermal resistance rating. 2. repetitive rating : pulse width limited by junction temperature. 3. pulse test : pulse width 300s, duty cycle 2%. 4. these parameters have no way to verify. 0 2 6 ) ( 7 ( / ( & 7 5 , & $ / & + $ 5 $ & 7 ( 5 , 6 7 , & 6 ta =25 / unless otherwise specified www.cj-elec.com 2 i , may ,2015
012345 0 5 10 15 20 024681 0 0 20 40 60 80 024681 0 0 20 40 60 80 0.2 0.4 0.6 0.8 1.0 1e-3 0.01 0.1 1 0246 0 5 10 15 20 25 50 75 100 125 1.5 1.6 1.7 1.8 v gs =4v,4.5v,5v,5.5v 3.5v v gs =3v ta=25 pulsed output characteristics drain current i d (a) drain to source voltage v ds (v) i d =8.2a ta=25 pulsed v gs ?? r ds(on) on-resist ance r ds(on) (m ? ) gate to source voltage v gs (v) v gs =4.5v v gs =10v i d ?? r ds(on) ta=25 puls ed on-resist ance r ds(on) (m ? ) drain current i d (a) v sd i s ?? ta=25 puls ed source current i s (a) source to drain voltage v sd (v) v ds =5v ta=25 pulsed transfer c h aracteristics drain current i d (a) gate to source voltage v gs (v) threshol d vol tage i d =250ua threshold voltag e v th (v) junction temperature t j ( ) 7 \ s l f d o & k d u d f w h u l v w l f v www.cj-elec.com 3 i , may ,2015
5 sop8 package outline dimensions sop8 suggested pad lay out mi n max mi n max a a1 0.100 0.250 0.004 0.010 a2 1.3 50 1.5 5 0 0.053 0.0 61 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.007 0.010 d 4.800 5.000 0.189 0.197 e e 5.800 6.200 0.228 0.244 e1 3.800 4.000 0.150 0.157 l 0.400 1.270 0.016 0.050 0 8 0 8 sy m bo l dimensions in millimeters dimensions in inches 0.050bsc 1.270bsc 1.350 1.750 0.053 0.069 www.cj-elec.com 4 i , may ,201
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