sop8 jiangsu changjiang electronics technology co., lt d sop8 plastic-encapsulate mosfets CJQ4407 p-channel powe r mosfet description the CJQ4407 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications a p plications z battery protection applications z load s w itch q4407= device code solid dot=pin1 indicator soli d dot = green molding compound device, if none, the normal device front side yy=date code maximum ratings ( t a =25 unless other w ise noted ) parameter symbol limit unit drain-source voltag e v ds -30 v gate-source voltag e v gs 20 v continuous dr ain c urrent i d -12 a pulsed drai n c urrent i dm -48 a single pulsed avala nche energy e as (1) 115 mj power diss ipation p d 1.4 w thermal resistance from junc tion to ambient r ja 89 /w junction te mperature t j 150 storage temperature ra nge t stg -55 ~+150 lead temperature for sold ering purposes(1/8?? from case for 10s) t l 260 (1).e as condition: v dd = - 50v,l=0.5mh, r g =25 ? , starting t j = 25c 12 3 4 5 6 78 sg dd d d s s www.cj-elec.com 1 a- 3 , feb ,201 6 marking equivalent circuit v (br)dss r ds(on) max i d -3 0 v ? 13m @ - 10v ? -12 a 17m @ -6 v ? ?
parameter sy mbol te st condition min typ max unit off characteristics drain-source b r eakdown voltage v (br) dss v gs = 0v, i d =-250a -30 v zero gate volta ge dra in current i dss v ds =-30v, v gs =0v -1 a gate-body leakage curr ent i gss v ds =0v, v gs =20v 100 na on characteris tics (n ote1) gate-threshold voltage v gs(th) v ds =v gs , i d =-250a -1.0 -1.5 -2.2 v v gs =-10v, i d =-12a 7.8 13 m ? static drain-source on-sa te re sistance r ds(on) v gs =-6v, i d =-10a 9 17 m ? forw a rd transconductance g fs v ds =-5v, i d =-15a 25 s dyna mic ch aracteristics (note 2) input capacitanc e c iss 2900 output capacitance c oss 410 reverse transfer capacitance c rss v ds =-15v,v gs =0v, f =1mhz 280 pf switching ch aracteristics (note 2) total gate charge q g 48 gate-source charge q gs 12 gate-drain charge q gd v ds =-15v, v gs =-10v, i d =-10a 14 nc turn-on delay t ime t d (on) 15 turn-on rise time t r 11 turn-off delay t i me t d(off ) 44 turn-off fall time t f v dd =-15v, v gs =-10v,r g =3 ?, r l =1.25 ? 21 ns gate resistance r g f =1mhz, v ds =0v, v gs =0v, 3.6 ? drain-sou r ce diode characteristics drain-source di ode for ward voltage(note1) v sd v gs =0v, i s =-2a -1.2 v continuous drai n-so urce diode forward current i s -15 a pulsed drain-s ource d iode forward current i sm -60 a notes: 1. pulse te st : pulse w idth 300s, duty cycle 2%. 2. guaranteed by design, not su bject to production testing. www.cj-elec.com 2 a-3,feb,2016 mosfet electrical characteristics a t =25 unless otherwise specified
-0.0 -0 .2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -0.1 -1 -10 -0 -1 -2 -3 -4 -5 -0 -2 -4 -6 -8 -10 -1 2 -2 -4 -6 -8 -1 0 -1 2 4 6 8 10 12 -2 -3 -4 -5 -6 -7 -8 -9 -10 0 10 20 30 40 50 -0 -1 -2 -3 -4 -5 -0 -2 -4 -6 -8 -10 -1 2 25 50 75 100 125 -0 .8 -1 .0 -1.2 -1.4 -1.6 -1.8 -2.0 t a =100 v sd i s ? ? t a =25 source current i s (a) source to drain voltage v sd (v) -12 v gs =-3v,-4v,- 6v,-8v v gs =-2.5v ou t put characteristics v gs =-2.2v drain current i d (a) drain to source voltage v ds (v) pulsed t a =25 pulsed v gs =-10v v gs =-6v t a =25 pulsed on - resistance r ds( o n) (m ? ) drain current i d (a) i d ?? r ds(on) t a =100 pulsed i d =-12a t a =25 on - resistance r ds(o n) (m ? ) gate to source voltage v gs (v) v gs ?? r ds(on) v ds =-3v pulsed drain current i d (a) gate to source voltage v gs (v) t r an sfer characteristics t a =100 t a =25 i d =- 250ua thr e shold voltage thresho ld vo ltage v th (v) junction temperature t j ( ) 7 \ s l f d o & k d u d f w h u l v w l f v www.cj-elec.com 3 a-3,feb,2016
www.cj-elec.com 4 a-3,feb,2016 sop8 package outline dimensions sop8 suggested pad layout mi n max mi n max a a1 0.100 0.250 0.004 0.010 a2 1.3 50 1.5 5 0 0.053 0.0 61 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.007 0.010 d 4.800 5.000 0.189 0.197 e e 5.800 6.200 0.228 0.244 e1 3.800 4.000 0.150 0.157 l 0.400 1.270 0.016 0.050 0 8 0 8 sy m bo l dimensions in millimeters dimensions in inches 0.050bsc 1.270bsc 1.350 1.750 0.053 0.069
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