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| inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK1444 description drain current C i d =3a@ t c =25 drain source voltage- : v dss = 450v(min) fast switching speed applications designed for high voltage, high speed power switching absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 450 v v gs gate-source voltage 30 v i d drain current-continuous@ tc=25 3 a p tot total dissipation@tc=25 25 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK1444 electrical characteristics (t c =25 ) symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0; i d = 1ma 450 v v gs( th ) gate threshold voltage v ds =10 v gs ; i d =1ma 2.0 3.0 v r ds( on ) drain-source on-stage resistance v gs =10v; i d =0.5a 2.0 2.6 i gss gate source leakage current v gs = 30v;v ds = 0 100 na i dss zero gate voltage drain current v ds =450v; v gs = 0 1 ma v sd diode forward voltage i f =3a; v gs =0 1.8 v tr rise time v gs =10v;i d =1.5a;r l =50 20 ns ton turn-on time 32 ns tf fall time 35 ns toff turn-off time 115 ns pdf pdffactory pro www.fineprint.cn |
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