jiangsu changjiang electron ics technology co., ltd to-251 -3l plastic-encapsulate transistors B772M transistor (pnp) fea tures lowspeed switching maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -40 v v ceo collector-emitter voltage -30 v v ebo emitter-base voltage -6 v i c collector current -continuous -3 a p c collector power dissipation 1.25 w r ? ja thermal resistance, junction to ambient 100 /w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a=25 unless otherwise specified) parameter symbol test conditions min typ max u nit collector-base breakdown voltage v (br)cbo i c =-100 a ,i e =0 -40 v collector-emitter breakdown voltage v (br)ceo i c = -10ma , i b =0 -30 v emitter-base breakdown voltage v (br)ebo i e = -100 a,i c =0 -6 v collector cut-off current i cbo v cb = -40v, i e =0 -1 a collector cut-off current i ceo v ce =-30v, i b =0 -10 a emitter cut-off current i ebo v eb =-6v, i c =0 -1 a dc current gain h fe v ce = -2v, i c = -1a 60 400 collector-emitter saturation voltage v ce(sat) i c =-2a, i b = -0.2a -0.5 v base-emitter saturation voltage v be(sat) i c =-2a, i b = -0.2a -1.5 v transition frequency f t v ce = -5v, i c =-0.1a f = 10mhz 50 80 mhz classification of h fe rank r o y gr range 60-120 100-200 160-320 200-400 to-251 -3l 1. emitter 2. collector 3 base www.cj-elec.com 1 d,feb,2016
www.cj-elec.com 2 d , feb ,2016 to-251-3l package outline dimensions min. max. min. max. a 2.200 2.400 0.087 0.094 a1 1.050 1.350 0.042 0.054 b 1.350 1.650 0.053 0.065 b 0.500 0.700 0.020 0.028 b1 0.700 0.900 0.028 0.035 c 0.430 0.580 0.017 0.023 c1 0.430 0.580 0.017 0.023 d 6.350 6.650 0.250 0.262 d1 5.200 5.400 0.205 0.213 e 5.400 5.700 0.213 0.224 e e1 4.500 4.700 0.177 0.185 l 7.500 7.900 0.295 0.311 symbol dimensions in millimeters dimensions in inches 2.300 typ. 0.091 typ.
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