1 4 - elm32d548a - s g e neral description f eatures maximum a bsolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction - to - case r j c 2.1 c /w maximum junction - to - a mbient r ja 62.5 c /w parameter symbol limit unit note drain-source voltage vds 30 v gate - s ource v oltag e vgs 20 v conti nuous drain current t a = 25 c id 8 5 a 4 t a = 10 0 c 54 pulsed d rain current idm 17 0 a 3 avalanche current ias 38 a avalanche energy l=0.1mh eas 72 mj power dissipation t c = 25 c pd 59 w t c = 10 0 c 23 j unction and storage temperature range tj , tstg - 55 to 150 c elm32d548a - s uses advanced trench technology to provide excellent r ds(on) , low gate charge and low gate resistance. ? vds = 30 v ? id = 8 5 a ? rds (on) < 4.6 m (vgs = 10 v) ? rds (on) < 7.2 m (vgs = 4.5 v) single n-channel mosfet pin no. pin name 1 gate 2 drain 3 source pin configuration c ircuit to - 2 52-3 (top vi ew) s g d 1 3 2 t a b t a = 25 c . u nless otherwise noted.
2 4 - elm32d548a - s electrical characteristics parameter symbol condition min. typ. max. unit note static parameters drain - s ource breakdown voltage bvdss id = 25 0 a , vgs = 0v 30 v zero g ate voltage drain current idss vds = 2 4 v, vgs = 0v 1 a vds = 20 v, vgs = 0v, t a =12 5 c 10 gate - b ody leakage current ig s s vds = 0v , vgs = 20 v 10 0 n a gate t hreshold voltage vg s( th) vds = vgs , id = 25 0 a 1.50 1.75 2.35 v static drain - s ource on - r esistance r d s (o n ) vgs = 10 v, i d = 20 a 3 .8 4.6 m 1 vgs = 4.5 v, id = 15 a 4.5 7.2 forward transconductance gfs vds = 5 v, i d = 2 0 a 70 s 1 diode forward voltage vsd if= 20 a , vgs = 0v 1.3 v 1 max. body - d iode continuous c urrent is 8 5 a 4 dynamic parameters input capacitance c iss vgs = 0v, vds = 1 5 v, f = 1mh z 2320 pf output capacitance c oss 346 pf reverse transfer capacitance c r ss 285 pf gate resistance rg vgs = 0 v, vds = 0 v, f = 1mh z 0.9 switching parameters total gate charge q g vgs = 10 v, vds = 1 5 v, id = 2 0 a 54.0 nc 2 gate - s ource charge q gs 7.5 nc 2 gate - d rain charge q gd 17.3 nc 2 turn - o n delay time t d (on) vgs = 10 v, vds = 1 5 v , id = 2 0 a rgen = 6 24 ns 2 turn - o n rise t ime t r 16 ns 2 turn - o ff delay time t d ( of f ) 63 ns 2 turn - o ff fall t ime t f 24 ns 2 body diode r everse recovery time trr i f = 20 a , dif/dt =100a/ s 23 ns body diode reverse recovery charge qrr 10 n c single n-channel mosfet note : 1. pulse test : pulsed width 300 sec and duty cycle 2%. 2. independent of operating temperature . 3. pulsed width limited by maximum junction temperature. 4 . calculated continuous current based on maximum allowable junction temperature, package limitation current is 40a . t a = 25 c . u nless otherwise noted.
3 4 - elm32d548a - s typical electrical and thermal characteristics rev 1.0 3 d-06-3 n-channel enhancement mode field effect transistor pd548ba to-252 halogen-free & lead-free niko-sem v gs , gate-to-source voltage(v) ca p acitance characteristic v ds , drain-to-source voltage(v) qg , total gate charge(nc) source-drain diode forward voltage v sd , source-to-drain voltage(v) on-resistance vs tem p erature 25 ? 125 ? -20 ? 0 8 16 24 32 40 0 1 2 3 4 5 0 8 16 24 32 40 0 1 2 3 4 5 6 vgs=10v vgs=9v vgs=8v vgs=7v vgs=6v vgs=5v vgs=4.5v vgs=3.5v vgs=2.5v vgs=3v 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 vgs=10v id=20a ciss coss crss 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 0 2 4 6 8 10 0 10 20 30 40 50 60 vds=15v id=20a 25 ? 150 ? 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 out p ut characteristics i d , drain-to-source current(a) transfer characteristics i d , drain-to-source current(a) v ds , drain-to-source voltage(v) normalized drain to source on-resistance t j , junction temperature( ? c) c , capacitance(pf) gate charge characteristics v gs , gate-to-source voltage(v) i s , source current(a) single n-channel mosfet
4 4 - elm32d548a - s rev 1.0 4 d-06-3 n-channel enhancement mode field effect transistor pd548ba to-252 halogen-free & lead-free niko-sem safe operating area single pulse maximu m power dissipation transient thermal res p onse curve dc 100ms 10ms 1ms 1 10 100 1000 0.1 1 10 100 note : 1.vgs= 10v 2.tc=25 ? c 3.r ? jc = 2.1 ? c/w 4.single pulse operation in this area is limited by rds(on) 0 80 160 240 320 400 0.001 0.01 0.1 1 10 100 single pulse r ? jc = 2.1 ? c/w tc=25 ? c single pulse duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 notes 1.duty cycle, d= t1 / t2 2.rthjc = 2.1 ? /w 3.tj-tc = p*rthjc(t) 4.rthjc(t) = r(t)*rthjc i d , drain current(a) power(w) single pulse time(s) v ds , drain-to-source voltage(v) r(t) , normalized effective transient thermal resistance t 1 , square wave pulse duration[sec] single n-channel mosfet
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