View CGHV14250-TB_8832037.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1 cghv14250 250 w, 1200 - 1400 mhz, gan hemt for l-band radar systems crees cghv14250 is a gallium nitride (gan) high electron mobility transistor (hemt) designed specifcally with high effciency, high gain and wide bandwidth capabilities, which makes the cghv14250 ideal for 1.2 - 1.4 ghz l-band radar amplifer applications. the transistor could be utilized for band specifc applications ranging from uhf through 1800 mhz. the package options are ceramic/metal fange and pill package. re v 1.0 C ma y 2015 features ? reference design amplifer 1.2 - 1.4 ghz operation ? fet tuning range uhf through 1800 mhz ? 330 w typical output power ? 18 db power gain ? 77% typical drain effciency ? <0.3 db pulsed amplitude droop ? internally pre-matched on input, unmatched output typical performance over 1.2-1.4 ghz (t c = 25?c) of demonstration amplifer parameter 1.2 ghz 1.25 ghz 1.3 ghz 1.35 ghz 1.4 ghz units output power 365 365 350 310 330 w gain 18.6 18.6 18.4 17.9 18.2 db drain effciency 80 80 77 74 76 % note: measured in the cghv14250-amp amplifer circuit, under 500 s pulse width, 10% duty cycle, p in = 37 dbm. package type: 440162, 440161 pn: cghv14250 subject to change without notice. www.cree.com/rf
2 absolute maximum ratings (not simultaneous) parameter symbol rating units conditions drain-source voltage v dss 125 volts 25?c gate-to-source voltage v gs -10, +2 volts 25?c storage temperature t stg -65, +150 ?c operating junction temperature t j 225 ?c maximum forward gate current i gmax 42 ma 25?c maximum drain current 1 i dmax 18 a 25?c soldering temperature 2 t s 245 ?c screw torque 40 in-oz cw thermal resistance, junction to case 3 r jc 0.95 ?c/w p diss = 167 w, 65?c pulsed thermal resistance, junction to case 3 r jc 0.57 ?c/w p diss = 167 w, 500 sec, 10%, 85?c pulsed thermal resistance, junction to case 4 r jc 0.63 ?c/w p diss = 167 w, 500 sec, 10%, 85?c case operating temperature 5 t c -40, +130 ?c p diss = 167 w, 500 sec, 10% note: 1 current limit for long term, reliable operation 2 refer to the application note on soldering at http://www.cree.com/rf/document-library 3 measured for the cghv14250p 4 measured for the cghv14250f 5 see also, the power dissipation de-rating curve on page 5 electrical characteristics characteristics symbol min. typ. max. units conditions dc characteristics 1 (t c = 25 ? c) gate threshold voltage v gs(th) -3.8 -3.0 -2.3 v dc v ds = 10 v, i d = 41.8 ma gate quiescent voltage v gs(q) C -2.7 C v dc v ds = 50 v, i d = 500 ma saturated drain current 2 i ds 31.4 37.6 C a v ds = 6.0 v, v gs = 2.0 v drain-source breakdown voltage v br 150 C C v dc v gs = -8 v, i d = 41.8 ma rf characteristics 3 (t c = 25 ? c, f 0 = 1.3 ghz unless otherwise noted) output power p out 275 330 C w v dd = 50 v, i dq = 500 ma, p in = 37 dbm drain effciency d e 63 77 C % v dd = 50 v, i dq = 500 ma, p in = 37 dbm power gain g p C 18.2 C db v dd = 50 v, i dq = 500 ma, p in = 37 dbm pulsed amplitude droop d C -0.3 C db v dd = 50 v, i dq = 500 ma output mismatch stress vswr C 5 : 1 C y no damage at all phase angles, v dd = 50 v, i dq = 500 ma , p in = 37 dbm pulsed notes: 1 measured on wafer prior to packaging. 2 scaled from pcm data. 3 measured in cghv14250-amp. pulse width = 500 s, duty cycle = 10%. cghv14250 rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
3 typical performance figure 1. - cghv14250 typical sparameters tcase = 25c v dd = 50 v, i dq = 500 ma figure 2. - cghv14250 typical rf results v dd = 50 v, i dq = 500 ma, p in = 37 dbm tcase = 25c, pulse width = 500 s, duty cycle = 10 % drain effciency gain gain - 10 0 10 20 30 m a g n i tu d e (d b ) cghv14250 typical sparameters vdd = 50 v, idq = 500 ma -40 -30 -20 - 10 1 1.1 1.2 1.3 1.4 1.5 1.6 m a g n i tu d e (d b ) frequency (ghz) s(2,1) s(1,1) s(2,2) output power gain 50 60 70 80 90 250 300 350 400 450 gai n ( d b ) & d r ai n ef f i ci en cy ( % ) ou t p u t po w er ( w ) cghv14250 typical rf results vdd = 50 v, idq = 500 ma, pin = 37 dbm tcase = 25 deg c, pulse width = 500 us, duty cycle = 10 % output power gain 0 10 20 30 40 0 50 100 150 200 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 gai n ( d b ) & d r ai n ef f i ci en cy ( % ) ou t p u t po w er ( w ) frequency (ghz) drain efficiency drain effciency output power gain cghv14250 rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
4 typical performance figure 3. - cghv14250 typical rf results v dd = 50 v, i dq = 500 ma, p in = 37 dbm tcase = 85c, pulse width = 500 s, duty cycle = 10 % figure 4. - cghv14250 cw rf results v dd = 50 v, i dq = 500 ma, p in = 37 dbm, tcase = 65c 40 50 60 70 200 250 300 350 gai n ( d b ) an d d r ai n ef f i ci en cy ( % ) ou t p u t po w er ( w ) cghv14250f cw rf results vdd = 50 v, idq = 500 ma, pin = 37 dbm, tcase = 65 c 0 10 20 30 0 50 100 150 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 gai n ( d b ) an d d r ai n ef f i ci en cy ( % ) ou t p u t po w er ( w ) frequency (ghz) pout gain drain eff drain effciency gain output power 40 50 60 70 80 200 250 300 350 400 g a i n (d b ) & d r a i n effi c i e n c y (% ) o u tp u t po w e r (w ) cghv14250 typical rf results vdd = 50 v, idq = 500 ma, pin = 37 dbm tcase = 85 deg c, pulse width = 500 us, duty cycle = 10 % output power gain drain efficiency 0 10 20 30 0 50 100 150 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 g a i n (d b ) & d r a i n effi c i e n c y (% ) o u tp u t po w e r (w ) frequency (ghz) drain effciency output power gain cghv14250 rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
5 source and load impedances frequency (mhz) z source z load 900 0.6 - j0.3 5.3 + j0.1 1000 0.7 - j0.8 4.3 +j0.8 1100 1.3 - j1.1 3.3 + j0.8 1200 1.8 - j1.1 3.0 + j0.4 1300 2.5 - j0.7 2.5 + j0.4 1400 3.4 - j0.7 2.3 + j0.1 1500 1.8 - j0.9 2.3 + j0 note 1. v dd = 50 v, i dq = 500 ma in the 440162 package note 2. optimized for power gain, p sat and drain effciency note 3. when using this device at low frequency, series resistors should be used to maintain amplifer stability cghv14250f power dissipation de-rating curve figure 4. - cghv14250 transient power dissipation de-rating curve note 1. area exceeds maximum case temperature (see page 2). pill - 500 s 10% flange - cw note 1 cghv14250 rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
6 cghv14250-amp demonstration amplifer circuit bill of materials designator description qty r1 res, 1/16w, 0603, 1%, 562 ohms 1 r2 res, 5.1 ohm, +/-1%, 1/16w, 0603 1 r3 res, 1/16w, 0603, 1%, 4700 ohms 1 l1 inductor, chip, 6.8 nh, 0603 smt 1 c1, c23 cap, 27pf, +/- 5%, 250v, 0805, atc 600f 2 c2 cap, 2.0pf, +/- 0.1pf, 0603, atc 1 c3, c4 cap, 0.5pf, +/-0.05pf, 0805, atc 600f 2 c5,c6 cap, 1.0pf, +/-0.05 pf, 0805, atc 600f 2 c7,c8,c9,c10 cap, 3.0pf, +/-0.1pf, 250v, 0805, atc 600f 4 c11,c24 cap, 47pf,+/-5%, 250v, 0805, atc 600f 2 c12,c25 cap, 100pf, +/-5%, 250v, 0805, atc 600f 2 c13,c26 cap, 33000pf, 0805,100v, x7r 2 c14 cap 10uf 16v tantalum 1 c15,c16,c17,c18 cap, 3.9pf, +/-0.1pf, 250v, 0805, atc 600f 4 c19,c20 cap, 1.2pf, +/-0.05pf, 0805, atc 600f 2 c27 cap, 1.0uf, 100v, 10%, x7r, 1210 1 c28 cap, 3300 uf, +/-20%, 100v, electrolytic 1 j1,j2 conn, sma, panel mount jack, fl 2 j3 header rt>plz .1cen lk 9pos 1 j4 connector ; smb, straight, jack,smd 1 w1 cable ,18 awg, 4.2 1 pcb, ro4350, 0.020 mil thk, cghv14250, 1.2-1.4ghz 1 q1 cghv14250 1 cghv14250-amp demonstration amplifer circuit cghv14250 rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
7 cghv14250-amp demonstration amplifer circuit outline cghv14250-amp demonstration amplifer circuit schematic cghv14250 rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
8 product dimensions cghv14250f (package type 440162) product dimensions cghv14250p (package type 440161) cghv14250 rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
9 part number system parameter value units upper frequency 1 1.4 ghz power output 250 w type f = flanged p = package - table 1. note 1 : alpha characters used in frequency code indicate a value greater than 9.9 ghz. see table 2 for value. character code code value a 0 b 1 c 2 d 3 e 4 f 5 g 6 h 7 j 8 k 9 examples: 1a = 10.0 ghz 2h = 27.0 ghz table 2. type power output (w) upper frequency (ghz) cree gan high voltage cghv14250f cghv14250 rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
10 product ordering information order number description unit of measure image cghv14250f gan hemt each cghv14250p gan hemt each CGHV14250-TB test board without gan hemt each cghv14250p-amp test board with gan hemt installed each cghv14250f-amp test board with gan hemt installed each cghv14250 rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
11 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death or in applications for planning, construction, maintenance or dir ect operation of a nuclear facility. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/rf sarah miller marketing cree, rf components 1.919.407.5302 ryan baker marketing & sales cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.407.5639 cghv14250 rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.

▲Up To Search▲

Price & Availability of CGHV14250-TB

	To Download CGHV14250-TB Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .